JPH02236809A - Production of thin-film magnetic head - Google Patents
Production of thin-film magnetic headInfo
- Publication number
- JPH02236809A JPH02236809A JP5812789A JP5812789A JPH02236809A JP H02236809 A JPH02236809 A JP H02236809A JP 5812789 A JP5812789 A JP 5812789A JP 5812789 A JP5812789 A JP 5812789A JP H02236809 A JPH02236809 A JP H02236809A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- film
- softening
- stage
- org
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 23
- 229920003986 novolac Polymers 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 23
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 64
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
く産業上の利用分野〉
本発明は、面内記録再生用または垂直記録再生用の薄膜
磁気ヘッドの製造方法に関し、導体コイル膜を支持する
有機絶縁膜を、ノボラック樹脂系フォトレジストを使用
して形成する場合に、そのキュア工程を、第1段階が1
20℃〜140℃、次の第2段階が170℃〜190℃
、次の第3段階が200℃〜320℃の3段階キュア工
程とすることにより、キュア工程において、ノボラツク
樹脂系フォトレジストでなる絶縁膜を軟化させることな
く、硬化させ、絶縁膜の軟化による導体コイル膜のパタ
ーン崩れを防止するようにしたものである。Detailed Description of the Invention Industrial Field of Application The present invention relates to a method of manufacturing a thin film magnetic head for in-plane recording/reproduction or perpendicular recording/reproduction. When forming using a photoresist, the curing process is performed in the first step.
20℃~140℃, the next second stage is 170℃~190℃
By making the next third step a three-step curing process at 200°C to 320°C, the insulating film made of novolak resin photoresist is cured without being softened in the curing process, and the conductor is formed by softening the insulating film. This is to prevent the pattern of the coil film from collapsing.
く従来の技術〉
薄膜磁気ヘッドとしては、面内記録再生用と垂直記録再
生用の2種類の方式のものが知られている。第1図は従
来より知られた面内記録再生用薄膜磁気ヘッドの要部の
断面図で、1は基体、2は下部磁性膜、3はアルミナ等
でなるギャップ膜、4は上部磁性膜、51、52は導体
コイル膜、61〜63はノボラック樹脂系フォトレジス
トで構成された有機絶縁膜、7はアルミナ等の保護膜で
ある。BACKGROUND ART Two types of thin film magnetic heads are known: one for in-plane recording and reproduction and one for perpendicular recording and reproduction. FIG. 1 is a sectional view of the main parts of a conventionally known thin film magnetic head for in-plane recording and reproducing, in which 1 is a base, 2 is a lower magnetic film, 3 is a gap film made of alumina or the like, 4 is an upper magnetic film, 51 and 52 are conductor coil films, 61 to 63 are organic insulating films made of novolac resin photoresist, and 7 is a protective film made of alumina or the like.
基体1は、Al203・TiC等のセラミック基体10
1の上にアルミナ等の絶縁膜102を被着させた構造と
なっている。The base 1 is a ceramic base 10 made of Al203, TiC, etc.
It has a structure in which an insulating film 102 made of alumina or the like is deposited on the substrate 1.
下部磁性膜2及び上部磁性膜4の先端部はギャップ膜3
を隔てて対向するボール部21、41となっており、こ
のボール部21、41において読み書きを行なう.ボー
ル部21、41に連続するヨーク部22、42は、ボー
ル部21、41とは反対側の結合部で、互いに結合され
ている。The tips of the lower magnetic film 2 and the upper magnetic film 4 are formed by a gap film 3.
There are ball parts 21 and 41 facing each other with a distance between them, and reading and writing are performed in these ball parts 21 and 41. The yoke parts 22 and 42 that are continuous with the ball parts 21 and 41 are connected to each other at a joining part on the opposite side from the ball parts 21 and 41.
導体コイル膜51、52は上述の結合部を渦巻状にまわ
るように配置され、互いに直列に接続されている。The conductor coil films 51 and 52 are arranged so as to spiral around the above-mentioned coupling portion, and are connected to each other in series.
上述の薄膜磁気ヘッドは、フォトリソグラフイと呼ばれ
る薄膜パターン形成技術によって製造される。その製造
工程のうち、導体コイル膜及び有機絶縁膜の形成工程の
概略を第2図に示してある。The above-mentioned thin film magnetic head is manufactured by a thin film pattern forming technique called photolithography. Among the manufacturing steps, the steps for forming the conductive coil film and the organic insulating film are schematically shown in FIG.
まず、第2図(a)の工程では、基板1の上に下部磁性
膜2及びギャップ膜3を形成した後、ノボラック樹脂系
フォトレジストでなるネガタイプまたはボジタイブレジ
スト膜61をコーティングし、90℃、30分の条件で
ソフトベークを行ない、露光、現像及び水洗の処理を施
す.続いて、130℃、1時間の熱処理及び220℃、
1時問の熱処理をそれぞれ行なって有機絶縁膜61を形
成する。従って、有機絶縁11!61のキュア工程は、
第1段階が130℃、第2段階が220℃の2段階キュ
ア工程となる。First, in the process shown in FIG. 2(a), a lower magnetic film 2 and a gap film 3 are formed on a substrate 1, and then a negative type or positive type resist film 61 made of novolac resin photoresist is coated. , soft bake for 30 minutes, and then perform exposure, development, and water washing. Subsequently, heat treatment at 130°C for 1 hour and 220°C,
The organic insulating film 61 is formed by performing heat treatment for one hour. Therefore, the curing process of organic insulation 11!61 is as follows:
This is a two-stage curing process, with the first stage at 130°C and the second stage at 220°C.
次に、第2図(b)の工程では、有機絶縁膜61の表面
にC U / T iの材料をスパッタリングして、下
地導体膜51Aを形成する。Next, in the step shown in FIG. 2(b), a C U /Ti material is sputtered on the surface of the organic insulating film 61 to form a base conductor film 51A.
次に、第2図(c)に示すように、下地導体膜51Aの
表面にネガまたはボジレジスト膜62Aを塗布し、90
℃、30分の条件でソフトベークを行なった後、第2図
(d)に示すように、レジスト膜62Aの上にフオトマ
ス8を位置決めし、露光を行なう.これにより、第2図
(e)に示すように、フォトマスク8のパターンと一致
した露光パターンが得られる.
次に、第2図(f)に示すように、Cuメツキ膜51B
を、例えば2.5μmの厚さで、レジスト膜62Aの除
去された部分62Bに付着させる.
次に、レジスト膜62Aを剥離し、剥離されたレジスト
膜62Aの下にある下地導体@51Aをイオンミーリン
グで除去して、第2図(f)に示すように、有機絶縁1
j61の上に導体コイル膜51を形成する.
この後、第2図(a)〜(f)の工程を繰返し、有機絶
緑膜62、導体コイル膜52及び有機絶縁膜63を積層
形成する。そして、有機絶縁膜63の表面に第1図に示
した上部磁性膜を形成し、その上から保護膜をスパッタ
リング等の手段によって付着させる.
く発明が解決しようとする課題〉
ところが、2段階キュア工程をとった従来の製造方法で
は、有機絶縁膜61〜63がパターン崩れを起し、これ
が原因となって導体コイル膜51、52のパターン崩れ
を招き、断線、短絡等の原因となっていることが分った
。有機絶縁膜61〜63のパターン崩れの原因は、次の
ように推測される。Next, as shown in FIG. 2(c), a negative or positive resist film 62A is applied to the surface of the base conductor film 51A, and
After soft-baking at 30° C. for 30 minutes, the photomass 8 is positioned on the resist film 62A and exposed, as shown in FIG. 2(d). As a result, an exposure pattern matching the pattern of the photomask 8 is obtained, as shown in FIG. 2(e). Next, as shown in FIG. 2(f), the Cu plating film 51B
is attached to the removed portion 62B of the resist film 62A to a thickness of, for example, 2.5 μm. Next, the resist film 62A is peeled off, and the base conductor @51A under the peeled resist film 62A is removed by ion milling, and as shown in FIG.
A conductive coil film 51 is formed on J61. Thereafter, the steps shown in FIGS. 2(a) to 2(f) are repeated to form an organic anti-green film 62, a conductive coil film 52, and an organic insulating film 63 in a laminated manner. Then, the upper magnetic film shown in FIG. 1 is formed on the surface of the organic insulating film 63, and a protective film is deposited thereon by means such as sputtering. However, in the conventional manufacturing method using a two-step curing process, the pattern of the organic insulating films 61 to 63 collapses, which causes the pattern of the conductor coil films 51 and 52 to collapse. It was found that this led to collapse, causing wire breaks and short circuits. The cause of the pattern collapse of the organic insulating films 61 to 63 is presumed to be as follows.
有機絶縁膜61〜63を構成するノボラツク樹脂系フォ
トレジストは、温度条件によって、熱軟化性となったり
、熱硬化性となったりするという極めて複雑な特性を有
している。このような複雑な特性を有するノボラック樹
脂系フォトレジストに対して、従来は、第1段階130
℃、第2段階220℃の2段階キュア工程をとっていた
ため、キュア工程において、ノボラック樹脂系フォトレ
ジストの軟化温度条件が満たされ、ノボラック樹脂系フ
ォトレジストが流動し、パターン崩れを生じてしまうも
のと推測される。The novolak resin-based photoresist constituting the organic insulating films 61 to 63 has extremely complex characteristics, such as being thermosoftening or thermosetting depending on the temperature conditions. Conventionally, for novolac resin photoresists having such complex characteristics, the first step 130 is
℃, and the second stage was 220℃, so the softening temperature conditions for the novolac resin photoresist were met in the curing process, causing the novolac resin photoresist to flow and cause pattern collapse. It is assumed that.
そこで、本発明の課題は、ノボラック樹脂系フォトレジ
ストでなる絶縁膜を軟化させることなく硬化させ、絶縁
膜軟化による導体コイル膜のパターン崩れを防止するよ
うにした薄膜磁気ヘッドの製造方法を提供することであ
る。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a thin film magnetic head in which an insulating film made of a novolac resin photoresist is hardened without softening, and pattern collapse of a conductive coil film due to softening of the insulating film is prevented. That's true.
く課題を解決するための手段〉
上述する課題を解決するため、本発明は、基体の上にノ
ボラック樹脂系フォトレジストにより、導体コイル膜を
支持する有機絶縁膜を形成する際に、前記有機絶縁膜は
、第1段階が120℃〜140℃、次の第2段階は1フ
O℃〜190℃、次の第3段階は200℃〜320℃の
3段階キュア工程で形成することを特徴とする。Means for Solving the Problems> In order to solve the above-mentioned problems, the present invention provides a method for forming an organic insulating film supporting a conductive coil film on a substrate using a novolac resin photoresist. The film is characterized by being formed in a three-step curing process: the first stage is 120°C to 140°C, the second stage is 1°C to 190°C, and the third stage is 200°C to 320°C. do.
く作用〉
ノボラック樹脂系フォトレジストは、第1の軟化温度と
、それよりも高い第2の軟化温度とを有することが分っ
た.これらの軟化温度は、ノボラック樹脂に添加される
感光樹脂の種類にもよるが、第1の軟化温度は140℃
前後で、第2の軟化温度は190℃前後であることも判
明した。また、320℃を越えると、ノボラツク樹脂自
体が熱分解を起すことも分った。It was found that the novolak resin photoresist has a first softening temperature and a second softening temperature higher than the first softening temperature. These softening temperatures depend on the type of photosensitive resin added to the novolac resin, but the first softening temperature is 140°C.
It was also found that the second softening temperature was around 190°C. It was also found that the novolak resin itself undergoes thermal decomposition when the temperature exceeds 320°C.
そこで、本発明は、第1段階で、ノボラツク樹脂系フォ
トレジストが熱軟化を起す第1の軟化温度寸前の120
℃〜140℃の温度で熱処理して、ノボラック樹脂系フ
ォトレジストを予備的に硬化させる。Therefore, in the first step, the present invention aims at 120°C, which is just before the first softening temperature at which the novolak resin photoresist undergoes thermal softening.
The novolac resin photoresist is preliminarily cured by heat treatment at a temperature of 140°C to 140°C.
次の第2段階では、第1の軟化温度を越え、第2の軟化
温度寸前の温度170℃〜190℃で熱処理して、予備
的に硬化させる。In the next second step, heat treatment is performed at a temperature of 170° C. to 190° C., exceeding the first softening temperature and just before the second softening temperature, to preliminarily harden the material.
そして、次の第3段階で、第2の軟化温度を越えノボラ
ック樹脂の熱分解温度よりは低い200℃〜320℃で
熱処理して、最終的にキュアさせる。Then, in the next third step, heat treatment is performed at 200 to 320° C., which exceeds the second softening temperature and is lower than the thermal decomposition temperature of the novolac resin, to finally cure it.
従って、本発明によれば、ノボラック樹脂系フォトレジ
ストを、軟化、流動及びパターン崩れを生じさせること
なく硬化させ、所定のパターンを有する有機絶縁膜を形
成することができる。Therefore, according to the present invention, a novolac resin photoresist can be cured without causing softening, flow, or pattern collapse, and an organic insulating film having a predetermined pattern can be formed.
例えば有機絶縁膜61を形成する場合を例にとって説明
すると、第2図(a)の工程において、基板1の上に下
部磁性膜2及びギャップ膜3を形成し、更に、ノボラッ
ク樹脂系フォトレジストでなるボジタイブレジスト膜6
1をコーティングし、90℃、30分の条件でソフトベ
ークを行ない、露光、現像及び水洗の処理を施す。For example, to explain the case of forming an organic insulating film 61, in the process shown in FIG. Positive resist film 6
1 was coated, soft-baked at 90° C. for 30 minutes, exposed, developed and washed with water.
この後、従来は、80℃、!時間の熱処理及び220℃
、1時間の熱処理をそれぞれ行なって有機絶縁膜61を
形成していたが、本発明では、第1段階が120℃〜1
40℃、次の第2段階が170℃〜190℃、次の第3
段階が200℃〜320℃の3段階キュア工程とする。After this, conventionally 80℃! Heat treatment for hours and 220℃
The organic insulating film 61 was formed by performing heat treatment for 1 hour and 1 hour, but in the present invention, the first step is performed at 120 °C to 1 hour.
40℃, the next second stage is 170℃~190℃, the next third stage
The curing process is a three-stage curing process with stages ranging from 200°C to 320°C.
時間的条件は、各段階とも1時間程度が適当である。Appropriate time conditions are approximately 1 hour for each stage.
有機絶縁膜62、63のキュア工程も同様にして行なう
。従って、本発明によれば、有機絶縁膜61〜63に熱
軟化を生じさせることなく、熱硬化させることができる
。The curing process for the organic insulating films 62 and 63 is performed in the same manner. Therefore, according to the present invention, the organic insulating films 61 to 63 can be thermally hardened without causing thermal softening.
本発明は、面内記録再生用薄膜磁気ヘッドのみならず、
垂直記録再生用薄膜磁気ヘッドにも同様に適用が可能で
ある.
〈発明の効果〉
以上述べたように、本発明に係る薄膜磁気ヘッドの製造
方法は、基体の上に、ノボラック樹脂系フォトレジスト
により、導体コイル膜を支持する有機絶縁膜を形成する
際に、有機絶縁膜は、第1段階が120℃〜140℃、
次の第2段階が170℃〜190℃、次の第3段階が2
00℃〜320℃の3段階キュア工程で形成するように
したから、ノボラック樹脂系フォトレジストでなる絶縁
膜を軟化させることなく硬化させ、絶縁膜軟化による導
体コイル膜のパターン崩れを防止するようにした薄膜磁
気ヘッドの製造方法を提供できる。The present invention is applicable not only to a thin film magnetic head for in-plane recording/reproduction.
It can also be applied to thin-film magnetic heads for perpendicular recording and reproduction. <Effects of the Invention> As described above, the method for manufacturing a thin film magnetic head according to the present invention includes the following steps when forming an organic insulating film supporting a conductive coil film on a base using a novolac resin photoresist. The organic insulating film has a temperature of 120°C to 140°C in the first stage,
The next second stage is 170℃~190℃, the next third stage is 2
Since it is formed using a three-step curing process at 00°C to 320°C, the insulating film made of novolac resin photoresist is cured without softening, and pattern collapse of the conductor coil film due to softening of the insulating film is prevented. A method for manufacturing a thin film magnetic head can be provided.
第1図は薄膜磁気ヘッドの要部における断面図、第2図
(a)〜(g)は薄膜磁気ヘッドの製造工程を示す断面
図である。
1・・・基体 2・・・下部磁性膜5、51、
52・・・導体コイル膜
61〜63・・・有機絶縁膜FIG. 1 is a sectional view of a main part of a thin film magnetic head, and FIGS. 2(a) to 2(g) are sectional views showing the manufacturing process of the thin film magnetic head. 1... Base 2... Lower magnetic film 5, 51,
52... Conductor coil film 61-63... Organic insulating film
Claims (1)
、導体コイル膜を支持する有機絶縁膜を形成する際に、
前記有機絶縁膜は、第1段階が120℃〜140℃、次
の第2段階が170℃〜190℃、次の第3段階が20
0℃〜320℃の3段階キュア工程で形成することを特
徴とする薄膜磁気ヘッドの製造方法。When forming an organic insulating film that supports the conductor coil film on the base using a novolac resin photoresist,
The organic insulating film is formed at temperatures of 120°C to 140°C in the first stage, 170°C to 190°C in the second stage, and 20°C in the third stage.
A method for manufacturing a thin film magnetic head, characterized in that it is formed in a three-step curing process at 0°C to 320°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812789A JP2578196B2 (en) | 1989-03-10 | 1989-03-10 | Method for manufacturing thin-film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5812789A JP2578196B2 (en) | 1989-03-10 | 1989-03-10 | Method for manufacturing thin-film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02236809A true JPH02236809A (en) | 1990-09-19 |
| JP2578196B2 JP2578196B2 (en) | 1997-02-05 |
Family
ID=13075316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5812789A Expired - Lifetime JP2578196B2 (en) | 1989-03-10 | 1989-03-10 | Method for manufacturing thin-film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2578196B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5659450A (en) * | 1993-12-27 | 1997-08-19 | Nec Corporation | Thin film recording head having enhanced electrical insulative properties |
-
1989
- 1989-03-10 JP JP5812789A patent/JP2578196B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5659450A (en) * | 1993-12-27 | 1997-08-19 | Nec Corporation | Thin film recording head having enhanced electrical insulative properties |
| US6024845A (en) * | 1993-12-27 | 2000-02-15 | Nec Corporation | Method for manufacturing a thin film recording head |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2578196B2 (en) | 1997-02-05 |
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