JPH0226225U - - Google Patents
Info
- Publication number
- JPH0226225U JPH0226225U JP10383288U JP10383288U JPH0226225U JP H0226225 U JPH0226225 U JP H0226225U JP 10383288 U JP10383288 U JP 10383288U JP 10383288 U JP10383288 U JP 10383288U JP H0226225 U JPH0226225 U JP H0226225U
- Authority
- JP
- Japan
- Prior art keywords
- directions
- pattern
- center
- width
- intervals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 12
- 238000007689 inspection Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 5
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
第１図は本考案の基本形のパターンを示した平
面図、第２図は基本形パターンをもとに作成した
本考案の一実施例の平面図、第３図は従来のマス
クずれ検査パターンの平面図、第４図はその配置
を示した平面図、第５図は、従来の食刻度検査パ
ターンの平面図である。
Ｃ１…本考案の前工程パターン、Ｃ２…本考案
の後工程パターン、Ｃａ〜Ｃｄ…本考案の前工程
パターンの辺、Ｃｘ０〜Ｃｘ１０…本考案のＸ方
向マスクずれ検出寸法、Ｃｙ０〜Ｃｙ１０…本考
案のＹ方向マスクずれ検出寸法、ｄ０〜ｄ１０…
本考案の食刻度検出寸法、Ｂ１…従来のマスクず
れ検査前工程パターン、Ｂ２…従来のマスクずれ
検査後工程パターン、ｌ１…前工程パターンピツ
チ、ｌ２…後工程パターンピツチ、ｂ０〜ｂ６…
従来パターンのマスクずれ検出寸法、ａ０〜ａ１
０…従来パターンの食刻度検出寸法。
Fig. 1 is a plan view showing the basic pattern of the present invention, Fig. 2 is a plan view of an embodiment of the invention created based on the basic pattern, and Fig. 3 is a plan view of a conventional mask misalignment inspection pattern. 4 is a plan view showing the arrangement thereof, and FIG. 5 is a plan view of a conventional etching depth inspection pattern. C1 ...Pre-process pattern of the present invention, C2 ...Post-process pattern of the present invention, C a to Cd ...Side of the pre-process pattern of the present invention, C x0 to C x10 ...X-direction mask deviation detection dimension of the present invention , C y0 to C y10 ... Y-direction mask shift detection dimensions of the present invention, d 0 to d 10 ...
Etch depth detection dimension of the present invention, B1 ...Conventional mask deviation inspection pre-process pattern, B2 ...Conventional mask deviation inspection post-process pattern, l1 ...Pre-process pattern pitch, l2 ...Post-process pattern pitch, b0 ~ b6 ...
Mask shift detection dimension of conventional pattern, a 0 to a 1
0 ...Conventional pattern etching depth detection dimension.
Claims (1)
をＬ字が向き合う点対称な位置でかつＹ方向のそ
れぞれの短辺と長辺が異なる間隔に、Ｘ方向のそ
れぞれの短辺と長辺が等しい間隔になるように配
置し、後工程に前記前工程と幅の異なるＬ字形パ
ターンを１つはＸ，Ｙ２方向の幅の中心が一致す
るように、もう１つは一定量Ｘ，Ｙ方向に幅の中
心をずらして配置し、上記パターンを前工程のそ
れぞれの短辺と長辺の間隔がＯを中心に正負規則
的な間隔になるように、また前工程と後工程のＸ
，Ｙ２方向の幅の中心のずれがＯを中心に正負規
則的な間隔になるようにＬ字形パターン２工程分
を複数個配置することによりＸ，Ｙ２方向のマス
クずれ及び食刻度を同時に検査することを特徴と
するマスクずれ検査兼食刻度検査パターン。 In the pre-process, two L-shaped patterns with a certain width are placed in symmetrical positions where the L-shapes face each other, and the short sides and long sides of each of the Y-directions are placed at different intervals, and the short sides and long sides of each of the X-directions are placed at different intervals. are arranged at equal intervals, and one L-shaped pattern having a width different from that of the previous process is placed in the subsequent process so that the centers of the widths in the two directions of The pattern is arranged with the center of the width shifted in the direction, and the above pattern is arranged so that the distance between the short side and the long side of each of the previous process is a regular interval of positive and negative with O as the center, and
By arranging a plurality of L-shaped patterns for two processes so that the deviation of the center of the width in the Y2 direction is at regular intervals of positive and negative with O as the center, mask deviation and etching depth in the X and Y2 directions are simultaneously inspected. A mask displacement inspection and etching depth inspection pattern characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10383288U JPH0226225U (en) | 1988-08-04 | 1988-08-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10383288U JPH0226225U (en) | 1988-08-04 | 1988-08-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0226225U true JPH0226225U (en) | 1990-02-21 |
Family
ID=31335011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10383288U Pending JPH0226225U (en) | 1988-08-04 | 1988-08-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0226225U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202311A (en) * | 1993-01-07 | 1994-07-22 | Toshiba Corp | Misalignment measurement method |
-
1988
- 1988-08-04 JP JP10383288U patent/JPH0226225U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06202311A (en) * | 1993-01-07 | 1994-07-22 | Toshiba Corp | Misalignment measurement method |
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