JPH0228974A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH0228974A
JPH0228974A JP63179582A JP17958288A JPH0228974A JP H0228974 A JPH0228974 A JP H0228974A JP 63179582 A JP63179582 A JP 63179582A JP 17958288 A JP17958288 A JP 17958288A JP H0228974 A JPH0228974 A JP H0228974A
Authority
JP
Japan
Prior art keywords
resin
semiconductor element
section
recessed section
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63179582A
Other languages
Japanese (ja)
Other versions
JP2618003B2 (en
Inventor
Nobuyuki Iwamoto
伸行 岩元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP63179582A priority Critical patent/JP2618003B2/en
Publication of JPH0228974A publication Critical patent/JPH0228974A/en
Application granted granted Critical
Publication of JP2618003B2 publication Critical patent/JP2618003B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable noise caused by reflected light by the inner face to be reduced easily to a substantial extent by providing a recessed section on the surface of sealing resin while inclining the surface of the recessed section by a predetermined angle. CONSTITUTION:A semiconductor resin package consists of a semiconductor mounting section 7, a lead frame 2, a sealing resin 1, a semiconductor element 3 and a resin surface recessed section 4. The recessed section 4 is inclined by 1 to 10 deg. relative to the surface of the semiconductor element by an injector pin. The semiconductor element 3 is a photodiode divided into four equal sections, namely quartered into four elements having a photodetecting size of 80mum square. Incident laser light 5 will be refracted since the surface of the recessed section 4 is inclined relative to the surface of the semiconductor element 3 and enters into all the elements of the photodiode. A part of the incident light is reflected by the photodetecting section 3' and reflected light 6 will be incident again on the inner face of the resin but does not return to the photodetecting section.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光電変換素子を樹脂封止成型した光半導体装置
において、光路側の樹脂部の表面に一定の角度を有する
陥没部を設けた光半導体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical semiconductor device in which a photoelectric conversion element is molded in a resin molding, in which a recessed portion having a certain angle is provided on the surface of a resin portion on the optical path side. It is related to.

従来の技術 従来の光半導体装置の平面図、断面図を”第2図(a)
、 (b)に示す。封止用樹脂1の表面はフラットでリ
ード部2ならびに素子載置部7が平板に形成され、半導
体素子3を搭載し使用されている。
2. Prior Art A plan view and a cross-sectional view of a conventional optical semiconductor device are shown in Figure 2 (a).
, shown in (b). The surface of the sealing resin 1 is flat, and the lead part 2 and the element mounting part 7 are formed into a flat plate, and the semiconductor element 3 is mounted thereon and used.

発明が解決しようとする課題 従来の光半導体において、素子載置部7及びリード部2
は同一平板に形成され、これに対し封止用樹脂1の表面
が平行になっている。このため、半導体レーザなどの光
源からの光を入射させると、樹脂内面の光反射成分が素
子部に再入射し、ノイズが多(なるという問題があった
。特に、素子部として、光電変換部を多分割とした微小
寸法タイプの場合に隣接のエレメントに不要な光が入射
するという欠点があった。
Problems to be Solved by the Invention In a conventional optical semiconductor, the element mounting part 7 and the lead part 2
are formed on the same flat plate, and the surface of the sealing resin 1 is parallel to this. For this reason, when light from a light source such as a semiconductor laser is incident, the light reflected component on the inner surface of the resin re-enters the element section, causing a problem of a lot of noise.In particular, as an element section, the photoelectric conversion section In the case of a micro-sized type with multiple divisions, there is a drawback that unnecessary light enters adjacent elements.

本発明はこのような問題を解決しようとするもので、簡
便な構造の半導体素子において、封止樹脂の構造を変え
ることにより容易にノイズを低減することを目的とする
The present invention attempts to solve such problems, and aims to easily reduce noise in a semiconductor element having a simple structure by changing the structure of the sealing resin.

課題を解決するための手段 上記問題を解決するために、本発明は半導体素子の封止
樹脂表面に一定の角度をもった陥没部を形成したもので
ある。
Means for Solving the Problems In order to solve the above-mentioned problems, the present invention forms a recessed portion having a certain angle on the surface of the sealing resin of a semiconductor element.

作用 本発明によると、半導体素子の封止樹脂表面に陥没部を
設けかつ半導体素子載置部に対し、1〜10°の角度を
設けたことにより封止用樹脂の内面反射によるノイズを
大幅に低減できる。
According to the present invention, noise caused by internal reflection of the sealing resin can be significantly reduced by providing a depressed portion on the surface of the sealing resin of the semiconductor element and providing an angle of 1 to 10 degrees with respect to the semiconductor element mounting portion. Can be reduced.

実施例 第1図(a)、 (b)は本発明の半導体樹脂パッケー
ジの平面図、断面図を示した一実施例である。半導体装
置部7.リードフレーム2.封止用樹脂1゜半導体素子
3.樹脂表面陥没部4で構成されている。樹脂表面陥没
部4は、たとえば、インジェクタービンによって、半導
体素子表面に対して4゜の角度をもたしである。経験に
よると、この角度は1°〜10”が適当であった。半導
体素子3として、4分割のフォトダイオードを用いてお
り、受光部サイズは80μm口のエレメントが4個、田
の字状に形成されており、それぞれ分離幅が15μmと
なっている。封止用の樹脂にはエポキシ系の透光性樹脂
を用いている。
Embodiment FIGS. 1(a) and 1(b) show an embodiment showing a plan view and a sectional view of a semiconductor resin package of the present invention. Semiconductor device section 7. Lead frame 2. Sealing resin 1° Semiconductor element 3. It is composed of a resin surface depression part 4. The resin surface depression portion 4 is formed at an angle of 4° with respect to the semiconductor element surface by, for example, an injector turbine. According to experience, a suitable angle for this angle is 1° to 10". A 4-part photodiode is used as the semiconductor element 3, and the light-receiving area has 4 elements with an opening of 80 μm arranged in a square shape. The separation width is 15 μm.Epoxy translucent resin is used as the sealing resin.

レーザ光5が入射すると、陥没の面4が半導体素子3の
表面に対して角度をもっているために、屈折しフォトダ
イオードのそれぞれのエレメントに入射する。入射光の
一部は受光部3゛で反射し、反射光6は樹脂の内面で再
入射をするが、受光部には戻ってこない。
When the laser beam 5 is incident, since the recessed surface 4 has an angle with respect to the surface of the semiconductor element 3, it is refracted and incident on each element of the photodiode. A part of the incident light is reflected by the light receiving section 3', and the reflected light 6 enters the inner surface of the resin again, but does not return to the light receiving section.

このように本実施例によると、光路となる樹脂表面に陥
没部の面を半導体素子表面に対して1゜〜10”の角度
をもたすことにより、樹脂内面反射光によるノイズを容
易に低減できる。本実施例では4°の角度を設けたこと
により、1/3以下のノイズ低減を実現できた。
In this way, according to this embodiment, the noise caused by the light reflected from the inner surface of the resin can be easily reduced by making the surface of the recessed part on the resin surface, which serves as the optical path, at an angle of 1° to 10'' with respect to the semiconductor element surface. In this example, by providing an angle of 4 degrees, it was possible to achieve a noise reduction of 1/3 or less.

発明の効果 以上のように、本発明によれば、樹脂封止表面に陥没部
および所定の角度を設けたことで、容易に内面反射光に
よるノイズを大幅に低減できる。
Effects of the Invention As described above, according to the present invention, by providing a recessed portion and a predetermined angle on the resin sealing surface, it is possible to easily and significantly reduce noise caused by internally reflected light.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例による光半導体装置の平面
図、断面図、第2図は従来例の平面図、断面図である。 1・・・・・・半導体素子封止用樹脂、2・・・・・・
リード部、3・・・・・・半導体素子、3′・・・・・
・受光部、4・・・・・・インジェクタービンによる陥
没部、5・・・・・・レーザ光、6・・・・・・樹脂内
面の反射光、7・・・・・・半導体装置部。 代理人の氏名 弁理士 粟野重孝 ほか1名第1図 (α) 傅ン
FIG. 1 is a plan view and a sectional view of an optical semiconductor device according to an embodiment of the present invention, and FIG. 2 is a plan view and a sectional view of a conventional example. 1...Resin for sealing semiconductor elements, 2...
Lead part, 3...Semiconductor element, 3'...
・Light receiving part, 4... Depression part due to injector turbine, 5... Laser light, 6... Reflected light from inner surface of resin, 7... Semiconductor device part . Name of agent: Patent attorney Shigetaka Awano and one other person Figure 1 (α) Fuun

Claims (1)

【特許請求の範囲】[Claims] リードフレームの素子載置部に光半導体素子を載置し、
透光性樹脂で封止し、光路側の前記樹脂封止部表面に陥
没部を設けかつ陥没部の面として前記素子載置部に対し
1〜10゜の角度を設けたことを特徴とする光半導体装
置。
Place the optical semiconductor device on the device placement part of the lead frame,
It is characterized in that it is sealed with a translucent resin, a recessed part is provided on the surface of the resin sealing part on the optical path side, and the surface of the recessed part is set at an angle of 1 to 10 degrees with respect to the element mounting part. Optical semiconductor device.
JP63179582A 1988-07-19 1988-07-19 Method for manufacturing optical semiconductor device Expired - Fee Related JP2618003B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63179582A JP2618003B2 (en) 1988-07-19 1988-07-19 Method for manufacturing optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63179582A JP2618003B2 (en) 1988-07-19 1988-07-19 Method for manufacturing optical semiconductor device

Publications (2)

Publication Number Publication Date
JPH0228974A true JPH0228974A (en) 1990-01-31
JP2618003B2 JP2618003B2 (en) 1997-06-11

Family

ID=16068247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63179582A Expired - Fee Related JP2618003B2 (en) 1988-07-19 1988-07-19 Method for manufacturing optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2618003B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287459U (en) * 1985-11-19 1987-06-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287459U (en) * 1985-11-19 1987-06-04

Also Published As

Publication number Publication date
JP2618003B2 (en) 1997-06-11

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