JPH024251U - - Google Patents
Info
- Publication number
- JPH024251U JPH024251U JP8199788U JP8199788U JPH024251U JP H024251 U JPH024251 U JP H024251U JP 8199788 U JP8199788 U JP 8199788U JP 8199788 U JP8199788 U JP 8199788U JP H024251 U JPH024251 U JP H024251U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor element
- seals
- viscosity resin
- electrode pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
第１図乃至第３図はこの考案の一実施例を示し
、第１図は半導体取付部の要部断面図、第２図は
もぐり込み性の良い樹脂を充填する例を示してな
る図、第３図は線膨張係数の低い樹脂を充填する
例を示してなる図、第４図及び第５図は従来例を
示し、第４図は半導体取付部の要部断面図、第５
図は第４図の半導体取付部の欠点を表してなる図
である。
１……半導体素子、３……基板、８……低粘度
の樹脂、９……線膨張係数の低い樹脂。
1 to 3 show an embodiment of this invention, FIG. 1 is a cross-sectional view of the main part of the semiconductor mounting part, FIG. 2 is a diagram showing an example of filling with a resin having good penetration properties, Fig. 3 is a diagram showing an example of filling with a resin having a low linear expansion coefficient, Figs. 4 and 5 show conventional examples, Fig. 4 is a sectional view of the main part of the semiconductor mounting part,
The figure is a diagram showing a defect of the semiconductor mounting portion of FIG. 4. 1...Semiconductor element, 3...Substrate, 8...Low viscosity resin, 9...Resin with low linear expansion coefficient.
Claims (1)
前記電極パターンに突起電極を介して接続される
半導体素子と、前記基板と前記半導体素子との間
の空間を密閉する低粘度の樹脂と、前記半導体素
子を前記基板上で密封する高粘度の樹脂とからな
る半導体取付構造。 A substrate on which an electrode pattern is formed, a semiconductor element connected to the electrode pattern of this substrate via a protruding electrode, a low-viscosity resin that seals a space between the substrate and the semiconductor element, and the semiconductor element. A semiconductor mounting structure consisting of a high viscosity resin that seals an element on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8199788U JPH024251U (en) | 1988-06-21 | 1988-06-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8199788U JPH024251U (en) | 1988-06-21 | 1988-06-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH024251U true JPH024251U (en) | 1990-01-11 |
Family
ID=31306765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8199788U Pending JPH024251U (en) | 1988-06-21 | 1988-06-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH024251U (en) |
-
1988
- 1988-06-21 JP JP8199788U patent/JPH024251U/ja active Pending
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