JPH0245719B2 - - Google Patents
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- Publication number
- JPH0245719B2 JPH0245719B2 JP59162852A JP16285284A JPH0245719B2 JP H0245719 B2 JPH0245719 B2 JP H0245719B2 JP 59162852 A JP59162852 A JP 59162852A JP 16285284 A JP16285284 A JP 16285284A JP H0245719 B2 JPH0245719 B2 JP H0245719B2
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- Prior art keywords
- plating
- particle size
- fine particles
- size distribution
- nickel
- Prior art date
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Description
【発明の詳細な説明】
(1) 発明の構成
〔産業上の利用分野〕
本発明は、塩化アルカリ水溶液の電解、或は水
電解に好適に使用される低水素過電圧特性を持つ
た活性陰極の製造方法に関するものである。[Detailed Description of the Invention] (1) Structure of the Invention [Field of Industrial Application] The present invention provides an active cathode with low hydrogen overvoltage characteristics that is suitably used for electrolysis of aqueous alkali chloride solutions or water electrolysis. This relates to a manufacturing method.
従来より陰極で水素ガスを発生する技術として
隔膜(アスベストの如き多孔性隔膜及びイオン
交換膜の如き密隔膜を含む)を使用したアルカリ
金属塩水溶液の電解が知られており、又水電解も
これに該当する。
Conventionally, electrolysis of aqueous alkali metal salt solutions using diaphragms (including porous diaphragms such as asbestos and tight diaphragms such as ion exchange membranes) has been known as a technique for generating hydrogen gas at the cathode. Applies to.
近年省エネルギーの観点から、この種技術にお
いて電解電圧の低減化が望まれて来ており、かゝ
る電解電圧低減の手段として各種活性陰極が提案
されている。 In recent years, from the viewpoint of energy saving, it has been desired to reduce the electrolysis voltage in this type of technology, and various active cathodes have been proposed as a means for reducing the electrolysis voltage.
このような活性陰極は通常、鉄、銅、ニツケル
及びこれらを含む合金、バルブ金属などの耐アル
カリ性基材の表面に低水素過電圧特性をもつ活性
金属材料の層を溶射、熱分解、溶融物への浸漬、
電気メツキ、化学メツキ、蒸着爆着などの手段で
被覆することによつて得られ、就中この活性金属
材料層の表面に細かい凹凸を形成して、多孔性の
粗なる活性表面を作ることにより活性金属材料層
本来の電気化学的触媒作用に加えて、活性表面積
の増大による水素過電圧低減の効果により助長せ
しめることも行なわれている。 Such active cathodes are typically made by thermally spraying, pyrolyzing, or melting a layer of an active metal material with low hydrogen overvoltage characteristics onto the surface of an alkali-resistant substrate such as iron, copper, nickel and their alloys, or valve metal. soaking,
It is obtained by coating by electroplating, chemical plating, vapor deposition explosion deposition, etc., and in particular by forming fine irregularities on the surface of this active metal material layer to create a porous and rough active surface. In addition to the electrochemical catalytic action inherent in the active metal material layer, it has also been promoted by the effect of reducing hydrogen overvoltage by increasing the active surface area.
この様な活性陰極として固体微粒子を分散せし
めたメツキ浴を使用し、その中のメツキ金属成分
と共に該固体微粒子を陰極基材表面にメツキする
いわゆる分散メツキによる活性陰極も提案されて
いる。(例えば、特開昭57−35689、同57−89491、
同57−94582、同57−94583など)。 An active cathode using so-called dispersion plating has also been proposed, in which a plating bath in which solid fine particles are dispersed is used as the active cathode, and the solid fine particles are plated on the surface of the cathode substrate together with the plating metal component therein. (For example, JP-A No. 57-35689, JP-A No. 57-89491,
57-94582, 57-94583, etc.)
この様にして得た水素発生陰極の性能は、格段
の進歩を示すに至つているが、一方かゝる陰極の
製造をより効率的に行い安価にして活性持続性に
優れた陰極を得んとすることも必要不可欠な事柄
である。実際問題として電極の製造コストを低
く、かつ効率よく行うことは例えば塩化アルカリ
水溶液電解に要する総合的な経費にも反映するも
ので、決して無視することの出来ない重要な問題
である。
Although the performance of hydrogen generating cathodes obtained in this way has shown remarkable progress, it is still possible to manufacture such cathodes more efficiently, at lower cost, and with excellent long-lasting activity. It is also essential to do so. As a practical matter, keeping electrode manufacturing costs low and efficient is an important issue that cannot be ignored, as it is reflected in the overall cost required for, for example, aqueous alkali chloride electrolysis.
本発明は上記した分散メツキによる陰極の製法
においてそのメツキ効率を向上せしめ、製造コス
トを低減せしめんとするものである。 The present invention aims to improve the plating efficiency and reduce the manufacturing cost in the method for manufacturing a cathode using the above-mentioned dispersion plating.
本発明は、固体微粒子を分散させたメツキ浴を
使用して電気メツキにより活性陰極を製造する際
に、大巾にコスト低減を計り、かつメツキ操作を
安定化して容易に優れた低水素過電圧陰極を製造
することが出来る方法である。
The present invention aims to significantly reduce costs when producing an active cathode by electroplating using a plating bath in which solid fine particles are dispersed, and to stabilize the plating operation to easily produce an excellent low hydrogen overvoltage cathode. This is a method that can produce.
本発明におけるメツキ浴は鍍着されるべき金属
成分の主体がニツケルであるようなメツキ成分を
含み、かつ固体微粒子を分散させたメツキ浴であ
り、かゝるメツキ浴を使用して陰極基材に電気メ
ツキを施すものである。 The plating bath in the present invention is a plating bath containing a plating component in which the main metal component to be plated is nickel, and solid fine particles are dispersed therein. Electroplating is applied to the surface.
上記の如く固体微粒子を分散させたメツキ浴に
よるメツキを前記の通り一般に分散メツキと称す
るが、本発明方法は、主としてかゝる分散メツキ
における固体微粒子を規定することによりメツキ
の効率化をはからんとするものである。 As mentioned above, plating using a plating bath in which solid fine particles are dispersed is generally referred to as dispersion plating, but the method of the present invention aims to improve the efficiency of plating mainly by specifying the solid fine particles in such dispersion plating. This is what we do.
本発明方法において使用する陰極基材として
は、メツキの密着性に格別支障を生じない耐食性
の金属材料が用いられ、具体的には鉄、銅、ニツ
ケル及びこれらを含む合金やバルブ金属よりなる
耐アルカリ性の金属素材が好ましく用いられ、又
かゝる金属素材に予めニツケルメツキ等のメツキ
を施したものを使用することも出来る。 As the cathode base material used in the method of the present invention, a corrosion-resistant metal material that does not particularly impede the adhesion of plating is used. Specifically, corrosion-resistant metal materials such as iron, copper, nickel, alloys containing these, and valve metals are used. An alkaline metal material is preferably used, and it is also possible to use such a metal material that has been previously plated with nickel plating or the like.
又その形状としては特に制限はないが、エキス
パンドメタル、及びこれをプレスした有孔平板、
パンチングメタル、織成金網等の多孔板形状のも
のが好ましく採用され、それらの空隙率は1〜99
%の範囲にあることが好ましい。 There are no particular restrictions on the shape, but expanded metal, a flat plate with holes pressed from it,
Perforated plates such as punched metal and woven wire mesh are preferably used, and their porosity is 1 to 99.
% range is preferable.
本発明に使用するメツキ浴は前記の通り陰極基
材にニツケルを主成分とする金属を析出するもの
であるが、ニツケル以外の成分としてコバルト、
モリブデン、鉄、タングステン、アルミニウムな
どを含有させることが出来る。しかしながら耐食
性の面からニツケルが主成分であり、余程の効果
がない限りにおいて、メツキ浴の管理上からシン
プルなものが望まれる。 As mentioned above, the plating bath used in the present invention deposits a metal mainly composed of nickel on the cathode substrate, but it also contains cobalt, cobalt, and other components other than nickel.
It can contain molybdenum, iron, tungsten, aluminum, etc. However, from the viewpoint of corrosion resistance, nickel is the main component, and as long as it is not very effective, a simple one is desired from the viewpoint of managing the plating bath.
主成分のニツケルは、例えば硫酸ニツケル、塩
化ニツケル、スルフアミン酸ニツケル等の形で加
えられ、これに更にアンモニウム又はその塩、ホ
ウ酸又はその塩、クエン酸又はその塩、ピロリン
酸塩、塩化アルカリなどが加えられて浴が構成さ
れる。分散される固体微粒子としてはニツケル、
コバルト、銀、ラネーニツケル等の金属粉末、酸
化ニツケル、酸化ジルコニウム、酸化モリブデ
ン、酸化ロジウムなどの酸化物、タングステンカ
ーバイト、シリコンカーバイド等の炭化物、硫化
ニツケル、硫化モリブデンなどの硫化物、その他
窒化物や炭素などを挙げることが出来る。これら
の固体微粒子はそれ自体が水素過電圧の低いもの
や、又分散メツキを行うことにより水素感電圧が
低下するものがある。 The main component, nickel, is added in the form of nickel sulfate, nickel chloride, nickel sulfamate, etc. In addition, ammonium or its salt, boric acid or its salt, citric acid or its salt, pyrophosphate, alkali chloride, etc. is added to form the bath. The solid particles to be dispersed include nickel,
Metal powders such as cobalt, silver, and Raney nickel; oxides such as nickel oxide, zirconium oxide, molybdenum oxide, and rhodium oxide; carbides such as tungsten carbide and silicon carbide; sulfides such as nickel sulfide and molybdenum sulfide; and other nitrides. Examples include carbon. Some of these solid fine particles have a low hydrogen overpotential by themselves, and some have a hydrogen sensitive voltage that is lowered by dispersion plating.
本発明方法においては、固体微粒子の粒径が
0.01〜100μの大きさのものが好ましく、又これ以
上の粒径のものを含んでいても使用出来るが、逆
に粒度分布の幅の狭いものはよくなく、その幅が
10μ以上の広い分布を持つものが使用される。 In the method of the present invention, the particle size of solid fine particles is
Particles with a size of 0.01 to 100μ are preferable, and particles with a larger particle size can also be used, but on the other hand, particles with a narrow particle size distribution are not good;
Those with a wide distribution of 10 μ or more are used.
粒度分布幅が10μ未満の固体微粒子を用いる
と、一応メツキ物は得られるが、水素過電圧が悪
くなつたり、メツキの付着のムラが出来たり、過
大又は過小に粒子がついたりするのでメツキ浴中
の固体微粒子の分布が10μ以上であることが必要
である。 If solid fine particles with a particle size distribution width of less than 10μ are used, a plated product can be obtained, but the hydrogen overvoltage may be poor, the plating may be uneven, or too many or too small particles may be attached, so it is difficult to use in the plating bath. It is necessary that the distribution of solid fine particles is 10μ or more.
本発明ではこのような固体微粒子の分布をもつ
たものを使用してメツキを行うのであるが、ある
一定の浴量ではメツキ面積の増大、例えば棒状の
基材にメツキする場合にはメツキ枚数の増加に従
つて、メツキの付き具合いが悪くなつてくる。そ
のため途中でメツキ浴から残りの固体微粒子を除
いて、新たに固体微粒子を添加することゝなり、
そのための労力及び除いた固体微粒子の処理など
が必要となる。これらの更新頻度を著しく減少さ
せることによりコストの大巾な低減が期待され
る。 In the present invention, plating is performed using a material with such a distribution of solid fine particles, but at a certain bath amount, the plating area increases, for example, when plating a rod-shaped base material, the number of sheets to be plated increases. As the number increases, the relationship between the matsuki becomes worse. Therefore, the remaining solid particles are removed from the plating bath midway through, and new solid particles are added.
This requires labor and processing of the removed solid particles. A significant reduction in cost is expected by significantly reducing the frequency of these updates.
この目的のために固体微粒子をメツキの進行に
伴つて追加するのであるが、浴と同じ様な粒度分
布のものを添加すると、少しずつ浴の粒度分布が
異つてきて、多数の陰極を同じ浴でメツキするこ
とは出来なくなる。意外なことにメツキ浴の最初
に使用した固体微粒子の持つ粒度分布よりも細か
い粒度側に偏倚した粒度分布の固体微粒子を浴に
追加しつゝ電気メツキを進行させることにより
かゝる問題が解消されることを見出した。 For this purpose, solid fine particles are added as plating progresses, but if particles with a similar particle size distribution as the bath are added, the particle size distribution of the bath will gradually differ, and many cathodes will have the same size. You will no longer be able to pamper yourself in the bath. Surprisingly, this problem was resolved by adding to the bath solid particles whose particle size distribution was biased towards finer particles than the particle size distribution of the solid particles used at the beginning of the plating bath and proceeding with electroplating. I found out that it can be done.
この場合の粒度分布の偏倚の程度には特に制限
はないが、粒度分布として両者が重複せずに全く
離れてしまつたものは好ましくなく、最初に使用
した固体微粒子の分布幅に対し、追加用の固体微
粒子が1/2〜1/10程度にズレているものが好まし
い。 There is no particular limit to the degree of deviation of the particle size distribution in this case, but it is undesirable for the particle size distribution to be completely separated without overlapping. It is preferable that the solid particles are deviated by about 1/2 to 1/10.
この場合、好ましくはメツキ物のメツキを剥離
させて測定した固体微粒子の粒度分布より細かい
粒度分布を持つものを追加することである。この
方法を採用することにより、固体微粒子の消費量
がほぼ1/10〜1/1000に低減される。これらの追加
量はメツキ物付着量の1.5〜6倍程度が好ましく
メツキ物の付着量より多くなる理由は、単に付着
してメツキ浴から出るものや、一度析出したもの
が剥離してメツキ浴中へ堆積されるものがあるた
めである。 In this case, it is preferable to add particles having a finer particle size distribution than that of the solid fine particles measured by peeling off the plating of the plated material. By employing this method, the consumption of solid fine particles is reduced by approximately 1/10 to 1/1000. It is preferable that the amount of these additions is about 1.5 to 6 times the amount of plating material deposited. This is because some substances are deposited on the surface.
本発明方法において、粒度分布の幅が10μ以上
の固体微粒子を用いること、及びメツキの進行に
伴つて該固体微粒子よりも細かい粒度側に偏倚し
た粒度分布の固体微粒子を用いることにより、適
正な分散メツキがなしうる理由は明らかではな
い。
In the method of the present invention, proper dispersion can be achieved by using solid fine particles with a particle size distribution width of 10μ or more, and by using solid fine particles whose particle size distribution deviates to a finer particle size side than the solid fine particles as plating progresses. It is not clear why Metsuki could do this.
しかし上記した固体微粒子の追加を行なう場合
と追加しない場合とで分散メツキの仕上りが明ら
かに相違し、前者の場合には表面緻密なメツキ層
が得られるのに対し、後者の場合には表面が荒く
比較的剥離し易いメツキ物が得られることから固
体微粒子の電気泳動的な作用に起因しているもの
と思われる。 However, the finish of dispersion plating is clearly different between when solid particles are added and when they are not. In the former case, a plating layer with a dense surface is obtained, while in the latter case, the surface is This seems to be due to the electrophoretic action of solid fine particles, since a rough and relatively easy-to-peel plated product is obtained.
以下に実施例および比較例により説明する。 This will be explained below using Examples and Comparative Examples.
実施例 1
SUS310S製のラス網(6SW×12LW×1.5T×
1.8W、単位mm;SWは網目の短手方向の長さ、
LWは網目の長手方向の長さ、Tは厚み、Wは刻
み巾を表わす。以下同じ)の両面をプレスにより
平担化した基材(1dm2(100mm×100mm))20枚を
使用して下記の工程でメツキを行なつた。Example 1 SUS310S lath net (6SW×12LW×1.5T×
1.8W, unit: mm; SW is the length of the mesh in the short direction,
LW represents the length in the longitudinal direction of the mesh, T represents the thickness, and W represents the width of the cut. Plating was performed using the following process using 20 substrates (1 dm 2 (100 mm x 100 mm)) whose both sides were flattened by pressing (the same applies hereinafter).
トリクロルエチレン洗浄→電解エツチング
→水洗→ストライクメツキ→水洗→分散
メツキ→水洗→分散メツキ→水洗
この工程における主要な部分の使用薬剤、操作
条件等は次の通りである。 Trichlorethylene cleaning → electrolytic etching → water washing → strike plating → water washing → dispersion plating → water washing → dispersion plating → water washing The chemicals used and operating conditions for the main parts in this process are as follows.
(1) 電解エツチング(工程)
〔エツチング液〕
硫 酸 300g/
界面活性剤 1〜2g/
液 量 5
〔条件〕
温 度 5〜20℃
電流密度 3A/dm2
使用陰極 Pb板(1dm2)
時 間 6分
(2) ストライクメツキ(工程)
〔メツキ液〕
塩化ニツケル 100g/
塩 酸 100g/
液 量 5
〔条件〕
温 度 5〜20℃
電流密度 3A/dm2
陽 極 Ni板
時 間 3分
(3) 分散メツキ(工程および)
〔メツキ液〕
硫酸ニツケル 84g/
塩化ニツケル 30 〃
塩化アンモン 4.5 〃
塩化カリ 6 〃
ホウ酸 30 〃
硫酸銅 0.4 〃
活性炭(初期投入) 15 〃
液 量 5
〔条件〕
温 度 30〜60℃
電流密度 20A/dm2
時 間 10分
陽 極 Ni板
(ポンプによる液撹拌実施)
〔操作〕
上記メツキ浴を使用しラス網1枚メツキ後
に、追加用の活性炭(初期投入活性炭と同じも
のをボールミルで48時間粉砕)12gを補給し、
又浴中の硫酸銅を分析し不足分を補給し、この
ようにして20枚のラス網のメツキを行なつた。
この場合の初期投入の活性炭の粒度分布は第1
図に示す通りであり、追加用活性炭の粒度分布
は第2図に示す通りのものであつた。(1) Electrolytic etching (process) [Etching solution] Sulfuric acid 300g/Surfactant 1-2g/Liquid amount 5 [Conditions] Temperature 5-20℃ Current density 3A/dm 2Cathode used P b plate ( 1dm2 ) Time 6 minutes (2) Strike plating (process) [Plating liquid] Nickel chloride 100g/Hydrochloric acid 100g/Liquid amount 5 [Conditions] Temperature 5-20℃ Current density 3A/dm 2 anodes Ni plate Time 3 minutes (3) Dispersion plating (process and) [Plating liquid] Nickel sulfate 84g/Nickel chloride 30 Ammonium chloride 4.5 Potassium chloride 6 Boric acid 30 Copper sulfate 0.4 Activated carbon (initial charge) 15 Liquid amount 5 [Conditions] Temperature: 30 to 60℃ Current density: 20A/dm 2 hours 10 minutes Anode Ni plate (liquid is stirred by pump) [Operation] After plating one sheet of lath using the above plating bath, additional activated carbon (initial addition) Replenish 12g of the same activated carbon (pulverized in a ball mill for 48 hours),
Also, the copper sulfate in the bath was analyzed and the deficiency was replenished, and 20 lath nets were plated in this way.
In this case, the particle size distribution of the initially charged activated carbon is
As shown in the figure, the particle size distribution of the additional activated carbon was as shown in FIG.
以上の2回分散メツキによる工程を経て得た20
枚のメツキ物の外観には全く差異はなく、又電位
の測定(20%KOH、室温、20A/dm2でHg/
HgOを基準電極としてルギン管をラス網の背面
に直接当接して測定)では−1.01〜−1.04Vの範
囲内にあり異常な電位を示したものは皆無であつ
た。 20 obtained through the above two-time dispersion plating process.
There was no difference in the appearance of the plated products, and potential measurements (20% KOH, room temperature, Hg/ dm2 at 20A/dm2)
Measurements were made using HgO as a reference electrode and a Luggin tube brought into direct contact with the back surface of the lath mesh), and the potential was within the range of -1.01 to -1.04V, with no abnormal potentials.
比較例 1
活性炭の追加を行なわずに、それ以外は実施例
1と同じように操作してメツキ物を得た。Comparative Example 1 A plated product was obtained in the same manner as in Example 1 except for adding activated carbon.
その結果、ラス網の5枚目から外観に変化が見
られ、10枚目に至つては表面に大きな粒径のもの
が部分的に付いた不均一なメツキ物となつた。電
位は1〜2枚目まで−1.02〜−1.04V 9〜10枚目
−1.06〜−1.08Vを示した。1枚目のものと10枚
目のものを30%NaOH中で90℃、50A/dM2で48
時間水素発生をし、再び電位を測定したところ、
1枚目のもの−1.01V、10枚目のもの−1.11Vを
示し、性能に著しい差が生じた。 As a result, a change in appearance was observed from the 5th layer of the lath mesh, and by the 10th layer, the surface was unevenly plated with particles of large size partially attached to the surface. The potential was -1.02 to -1.04V for the 1st and 2nd sheets, and -1.06 to -1.08V for the 9th and 10th sheets. The 1st and 10th samples were stored in 30% NaOH at 90°C and 50A/dM 2 at 48
When hydrogen was generated for an hour and the potential was measured again,
The first one showed -1.01V, and the tenth one showed -1.11V, indicating a significant difference in performance.
実施例 2
実施例1と同じ材質、形状で、面積が80dM2
(700×1140mm)のラス網を用いて、以下の工程で
メツキを行つた。なおメツキ浴の組成は、同じ工
程では実施例1と同じである。Example 2 Same material and shape as Example 1, area 80dM 2
Plating was carried out using a lath net (700 x 1140 mm) using the following steps. The composition of the plating bath is the same as in Example 1 in the same process.
トリクロルエチレン洗浄→電解エツチング
→水洗→ストライクメツキ→水洗→分散
メツキ→水洗→ニツケルイオウメツキ→水
洗→分散メツキ→水洗→ニツケルイオウメ
ツキ→水洗→分散メツキ→水洗→ニツケ
ルイオウメツキ→水洗
上記工程においてのトリクロルエチレン洗浄
で脱脂を行い、0.3M2のメツキ浴での電解エツ
チングを行い、水洗後0.3M2のメツキ浴でのス
トライクメツキを行つた。 Trichlorethylene cleaning → Electrolytic etching → Water washing → Strike plating → Water washing → Dispersion plating → Water washing → Nickel sulfur plating → Water washing → Dispersion plating → Water washing → Nickel sulfur plating → Water washing → Dispersion plating → Water washing → Nickel sulfur plating → Water washing In the above process Degreasing was performed by washing with trichlorethylene, electrolytic etching was performed in a 0.3M 2 plating bath, and after washing with water, strike plating was performed in a 0.3M 2 plating bath.
水洗後にの分散メツキを5A/dM2×20分行
い、水洗してのニツケルイオウメツキを5A/
dM2×20分行つた。 After washing with water, perform dispersion plating at 5A/dM 2 × 20 minutes, and after washing with water, perform dispersion plating at 5A/dM.
dM 2 x 20 minutes.
以上の様にして分散メツキを3回行い、最後に
のニツケルイオウメツキを5A/dM2×40分メ
ツキを行つた。 Dispersion plating was performed three times as described above, and the final nickel sulfur plating was performed at 5A/dM 2 ×40 minutes.
こゝで用いた活性炭はいずれも実施例1と同じ
ものであり、1枚のメツキ終了後、硫酸銅を分析
して不足分を添加した。又粉細した活性炭を100
gずつ追加した。 The activated carbon used here was the same as in Example 1, and after plating one sheet, copper sulfate was analyzed and the missing amount was added. Also, 100% fine activated carbon
Added each g.
このようにしてラス網36枚をメツキしたが、外
観には全く異常は見られなかつた。次いで2枚目
と35枚目より1dM2を切り出し、メツキの付着量
を分析したところ、2枚目は9.5〜10.3g/dM2、
35枚目は9.7〜10.1g/dM2であり、又このメツキ
物中の炭素量の分析結果は1枚目3.8〜4.2%、35
枚目は3.9〜4.3%であつた。電位は1枚目−1.02
〜−1.04V35枚目は−1.02〜−1.05Vで変化は認め
られなかつた。又付着した2枚目と35枚目の粒径
分布を測定した結果を図−3、図−4に示した。
これをみると、ほとんど粒径分布の変化は認めら
れない。 Thirty-six lath nets were plated in this way, and no abnormalities were observed in their appearance. Next, 1 dM 2 was cut out from the 2nd and 35th sheets and the amount of plating deposited was analyzed.
The 35th sheet is 9.7 to 10.1 g/dM 2 , and the analysis result of the carbon content in this plated material is 3.8 to 4.2%, 35
The rate for the second sheet was 3.9-4.3%. The potential is -1.02 on the first sheet
~-1.04V The 35th photo was between -1.02 and -1.05V, with no change observed. In addition, the results of measuring the particle size distribution of the 2nd and 35th adhered sheets are shown in Figures 3 and 4.
Looking at this, almost no change in particle size distribution is observed.
実施例 3
実施例1と同じ工程で分散メツキ浴中の固体微
粒子ラネーニツケル30g/とし(Ni55%Al45
%)硫酸銅を除いて分散メツキを行つた。Example 3 In the same process as in Example 1, 30 g of solid fine Raney nickel was added to the dispersion plating bath (Ni55% Al45).
%) Dispersion plating was performed without copper sulfate.
初期投入のラネーニツケルの粒度は、平均6−
8μであり、小さい方の粒径は1μ、大きい方の粒
径は24μであつた。又追加用のラネーニツケルの
粒度は平均3−4μであり小さい方の粒径は1μ以
下、大きい方の粒径は12μであつた。この追加用
ラネーニツケルを1dM21枚当り55g追加して5枚
メツキを行つた。1枚目の電位は−1.07V、5枚
目の電位は−1.08Vを示し、外観には差は認めら
れなかつた。 The initial particle size of Raneynickel is 6-
8μ, the smaller particle size was 1μ, and the larger particle size was 24μ. The particle size of the additional Raney nickel was 3-4μ on average, with the smaller particle size being 1μ or less and the larger particle size being 12μ. This additional Raney nickel was added at 1 dM 2 and 55 g per sheet, and 5 sheets were plated. The potential of the first sheet was -1.07V, and the potential of the fifth sheet was -1.08V, and no difference was observed in appearance.
本発明によれば、初期投入の固体微粒子の粒度
分布に対して、これより細かい粒度側にズレた粒
度分布の追加用固体微粒子を単に追加使用して分
散メツキを行うという簡単な方法で優れた品質の
活性陰極を得ることが出来、これによれば固体微
粒子の節約をはかりつゝ活性陰極の量産が可能と
なるものである。
According to the present invention, an excellent and simple method of performing dispersion plating by simply using additional solid particles whose particle size distribution is shifted to a finer particle size side than the particle size distribution of the initially charged solid particles can be achieved. A high-quality active cathode can be obtained, and this makes it possible to mass-produce active cathodes while saving on solid particles.
又、かゝる方法によつて品質一定の活性陰極を
安価に製造出来るという利点もあり、本発明はこ
れらの点において利用価値大なるものである。 Furthermore, this method has the advantage that active cathodes of constant quality can be manufactured at low cost, and the present invention has great utility in these respects.
第1図、第2図は実施例1に使用した固体微粒
子の粒度分布を示すヒストグラムであり、第1図
は初期投入用の固体微粒子の場合を、第2図は追
加投入用の固体微粒子の場合を示したものであ
る。第3図、第4図は実施例2で得た分散メツキ
活性陰極に形成されたメツキ中の固体微粒子の粒
度分布を示したヒストグラムであり、第3図は陰
極製作順位の2枚目のものについて、第4図は同
じく35枚目のものについて示したものである。
Figures 1 and 2 are histograms showing the particle size distribution of solid fine particles used in Example 1. Figure 1 shows the case of solid fine particles for initial charging, and Figure 2 shows the case of solid fine particles for additional charging. This shows the case. Figures 3 and 4 are histograms showing the particle size distribution of solid fine particles in the plating formed on the dispersed plating active cathode obtained in Example 2, and Fig. 3 is the second one in the cathode manufacturing order. Figure 4 also shows the 35th picture.
Claims (1)
あるメツキ成分を含み、かつ固体微粒子を分散さ
せてなるメツキ浴を使用して陰極基材に電気メツ
キを施すことからなり、粒度分布の幅が10μ以上
の上記固体微粒子を用い、メツキの進行に伴つて
該固体微粒子の粒度分布よりも細かい粒度側に偏
倚した粒度分布の固体微粒子を追加しつゝ電気メ
ツキを行なうことを特徴とする活性陰極の製造方
法。1 Electroplating is performed on the cathode substrate using a plating bath containing a plating component in which the main metal component to be plated is nickel and in which fine solid particles are dispersed, and the width of the particle size distribution is An active cathode characterized in that electroplating is performed using the above-mentioned solid fine particles of 10μ or more, and adding solid fine particles whose particle size distribution is biased toward a finer particle size side than the particle size distribution of the solid fine particles as plating progresses. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59162852A JPS6141785A (en) | 1984-08-03 | 1984-08-03 | Manufacture of active cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59162852A JPS6141785A (en) | 1984-08-03 | 1984-08-03 | Manufacture of active cathode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6141785A JPS6141785A (en) | 1986-02-28 |
| JPH0245719B2 true JPH0245719B2 (en) | 1990-10-11 |
Family
ID=15762464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59162852A Granted JPS6141785A (en) | 1984-08-03 | 1984-08-03 | Manufacture of active cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6141785A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BRPI0818104B1 (en) | 2007-11-16 | 2018-11-21 | Akzo Nobel Nv | alkali metal chlorate production process |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6047912B2 (en) * | 1980-12-02 | 1985-10-24 | 東亞合成株式会社 | Manufacturing method of cathode for hydrogen generation |
| JPS5831091A (en) * | 1981-08-18 | 1983-02-23 | Asahi Glass Co Ltd | Production of electrode |
| JPS58213887A (en) * | 1982-06-08 | 1983-12-12 | Toyo Soda Mfg Co Ltd | Electrode for plating |
-
1984
- 1984-08-03 JP JP59162852A patent/JPS6141785A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6141785A (en) | 1986-02-28 |
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| EXPY | Cancellation because of completion of term |