JPH0247921A - Current switching type logic circuit - Google Patents
Current switching type logic circuitInfo
- Publication number
- JPH0247921A JPH0247921A JP63198319A JP19831988A JPH0247921A JP H0247921 A JPH0247921 A JP H0247921A JP 63198319 A JP63198319 A JP 63198319A JP 19831988 A JP19831988 A JP 19831988A JP H0247921 A JPH0247921 A JP H0247921A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- output
- current
- switching type
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005856 abnormality Effects 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract description 4
- 230000007257 malfunction Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000002965 ELISA Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Logic Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電流切換型論理回路に関し、特に、出カニミッ
タフォロワトランジスタを有するバイポーラの電流切換
型論理回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a current switching type logic circuit, and more particularly to a bipolar current switching type logic circuit having an output limiter follower transistor.
電流切換型論理回路はバイポーラ基本論理回路の代表的
な回路として広く使用され、特に高速論理LSIの基本
回路として普及している。Current switching type logic circuits are widely used as typical bipolar basic logic circuits, and are particularly popular as basic circuits of high-speed logic LSIs.
回路形式としては第3図に示す構成が一般的であり、集
積度の増加に伴う負荷配線長の増大に対応した高駆動能
力を得る為、出力には通常インピーダンス変換としてエ
ミッタフォロワ回路が付加される。The configuration shown in Figure 3 is common as a circuit format, and an emitter follower circuit is usually added to the output as an impedance conversion in order to obtain high drive capability that can cope with the increase in load wiring length due to increase in the degree of integration. Ru.
入力端子INI、IN2に印加された入力レベルに対し
、OR論理出力がOUT端子に得られる。入力端子IN
I、IN2に印加される論理レベルは出力OUTに得ら
れるレベルに等しく、スイッチング動作を得る為にリフ
ァレンス側トランジスタQ3にはリファレンス電圧とし
て入出力の論理レベルに対し中間の論理レベルVRI!
Fが印加される。An OR logic output is obtained at the OUT terminal for the input levels applied to the input terminals INI and IN2. Input terminal IN
The logic level applied to I and IN2 is equal to the level obtained at the output OUT, and in order to obtain switching operation, the reference side transistor Q3 is set as a reference voltage at an intermediate logic level VRI! to the input/output logic level.
F is applied.
エミッタフォロワトランジスタは抵抗R3を介してほぼ
一定のバイアス電流が与えられ、そのベース・エミッタ
間順方向電圧(VILE>は約0.8■の一定値を保ち
、トランジスタQsのコレクタに得られた電位をレベル
シフトして出力OUTに与える役目を果している。An almost constant bias current is applied to the emitter follower transistor through the resistor R3, and its base-emitter forward voltage (VILE>) remains constant at approximately 0.8■, and the potential obtained at the collector of the transistor Qs It plays the role of level-shifting the signal and providing it to the output OUT.
上述した従来の電流切換型論理回路は何らかの理由によ
り抵抗R3への接続がオープンまたは異常な場合でも、
トランジスタQ4には次段ゲートへのリーク電流により
0.6v程度の順方向電圧が得られるため、動作速度と
しては正常な規格に対し、異常に大きいものの機能的に
は動作してしまい、一般的な低速度の論理LSIテスタ
ーではその不具合を検出不可能な為、速度不良品を出荷
してしまう可能性があるという欠点を有していた。In the conventional current switching type logic circuit described above, even if the connection to resistor R3 is open or abnormal for some reason,
Transistor Q4 obtains a forward voltage of approximately 0.6V due to leakage current to the gate of the next stage, so although the operating speed is abnormally high compared to the normal standard, it operates functionally and is not normally used. Since the low-speed logic LSI tester cannot detect such defects, it has the disadvantage that there is a possibility that a defective product may be shipped.
特にLSIの場合、半導体集積回路の性質から、抵抗R
3への配線および接続上のプロセス的な異常はある確率
で必ず存在すると考えられ、従来の回路では速度不良品
の選別による排除が通常の方法によっては困難であり、
実際の装置に実装して始めて不良と判明する市場不良と
なる可能性が高いという欠点を有していた。Especially in the case of LSI, due to the nature of semiconductor integrated circuits, the resistance R
It is thought that process abnormalities in the wiring and connections to 3 will always exist with a certain probability, and in conventional circuits, it is difficult to eliminate by screening poor speed products using normal methods.
This has the disadvantage that there is a high possibility that the device will become defective in the market and will only be found to be defective after being implemented in an actual device.
尚、抵抗R8への接続以外の部分がオープンとなった場
合は、低速に於ても明らかに機能不良となる為、初期の
段階で容易に検出可能であり、閉頭ではなかった。Note that if any part other than the connection to the resistor R8 becomes open, it will clearly result in a malfunction even at low speeds, so it can be easily detected at an early stage and the head was not closed.
〔課題を解決するための手段〕
本発明の電流切換型論理回路は、出力にエミッタフォロ
ワトランジスタを有するバイポーラ電流切換型論理回路
に於て、該エミッタフォロワトランジスタのエミッタ出
力を高抵抗を介して該電流切換型論理回路のリファレン
ス側トランジスタのベースへ接続して構成される。[Means for Solving the Problems] The current switching type logic circuit of the present invention is a bipolar current switching type logic circuit having an emitter follower transistor at the output. It is configured by being connected to the base of the reference side transistor of a current switching type logic circuit.
第1図は本発明の第1の実施例を示す回路図である。 FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
以下第1図により本発明の動作の詳細を説明する。The details of the operation of the present invention will be explained below with reference to FIG.
抵抗R1〜R2,トランジスタQ1〜Q、および定電流
源11は一般的な電流切換型論理回路を形成しており、
入力IN、、IN2の入力論理レベルに応じてトランジ
スタQ3のコレクタ出力には前記2人力の論理和出力が
得られる。Resistors R1 to R2, transistors Q1 to Q, and constant current source 11 form a general current switching type logic circuit,
Depending on the input logic level of the inputs IN, . . . IN2, the logical sum output of the two inputs is obtained at the collector output of the transistor Q3.
一方トランジスタQ4と抵抗R4はエミッタフォロワ回
路を構成しており、Q3のコレクタに得られた出力レベ
ルをトランジスタQ4の順方向電圧(以下VB+!と呼
ぶ)分だけレベルシフトしメカIN、、IN2に印加さ
れるレベルと同一の出力レベルがOUT端子に得られる
。On the other hand, the transistor Q4 and the resistor R4 constitute an emitter follower circuit, which shifts the output level obtained at the collector of Q3 by the forward voltage of the transistor Q4 (hereinafter referred to as VB+!) and outputs it to the mechanism IN, IN2. The same output level as the applied level is obtained at the OUT terminal.
vatpはリファレンス電位であり、通常入力IN、、
IN2に印加される入力論理レベルの中央に設定され、
入力IN、、IN2の入力論理に応じて工1の電流がQ
1〜Q3に切換えられ、所要の論理が出力OUTに得ら
れるよう動作する。vatp is a reference potential, and is normally input to IN, .
set to the center of the input logic level applied to IN2,
Depending on the input logic of inputs IN, IN2, the current of
1 to Q3, and operates so that the required logic is obtained at the output OUT.
抵抗R4は本発明に成る新規の構成であり、他の抵抗R
,〜R3に比較して極めて大きな値に設定され、出力O
UTとリファレンス電位VREFIすなわちQ3のベー
スの間に接続される。Resistor R4 has a new configuration according to the present invention, and other resistors R
, ~R3 is set to an extremely large value compared to R3, and the output O
It is connected between UT and the reference potential VREFI, ie, the base of Q3.
この抵抗R4は高抵抗である為、流れる電流は本回路の
他の部分を流れる電流に比較して著しく少なく設定され
、またVREFは安定な基準電圧源により供給されてい
る為、本回路の接続が正常である限り、R4はその動作
にほとんど影響を与えず、わずかなリーク電流が出力O
UTとVREFの電位差に応じて流れるのみである。Since this resistor R4 has a high resistance, the current flowing through it is set to be significantly lower than the current flowing through other parts of this circuit, and since VREF is supplied by a stable reference voltage source, the connection of this circuit is As long as R4 is normal, R4 has little effect on its operation, and a small leakage current will cause the output O
It only flows according to the potential difference between UT and VREF.
次に何らかの原因により、抵抗R3への接続に異常があ
りQ4へのバイアス電流が流れなくなった場合を考える
と、出力OUTの電位は抵抗R4を介してVRI!F電
圧にクランプされる。R4を流れる電流はこの場合、次
段に接続された負荷ゲートの入力電流のみであり、通常
この入力電流はベース電流で極めて少ない値である為、
R4での電圧降下はほとんどなく出力OUTの電位はほ
とんどVRlLPと同一にクランプされる。Next, suppose that for some reason there is an abnormality in the connection to resistor R3 and the bias current no longer flows to Q4.The potential of the output OUT will be changed to VRI! through resistor R4. Clamped to F voltage. In this case, the current flowing through R4 is only the input current of the load gate connected to the next stage, and since this input current is normally the base current and has an extremely small value,
There is almost no voltage drop at R4, and the potential of the output OUT is clamped almost to the same level as VRlLP.
従って、出力OUTには抵抗R3への接続に異常があっ
た場合、本来得られるべき論理レベルでなくVREF電
位が出力される為、次段のゲートを確実に誤動作せしめ
る為、−a的な低速の自動テスタにても、終端抵抗の異
常に起因する速度不良を容易に検出可能ならしめる。Therefore, if there is an abnormality in the connection to the resistor R3 at the output OUT, the VREF potential is output instead of the logic level that should be obtained, so in order to ensure that the next stage gate malfunctions, the -a low speed Even automatic testers can easily detect speed failures caused by abnormalities in the terminating resistor.
第2図は本発明による第2の実施例を示す回路図である
。FIG. 2 is a circuit diagram showing a second embodiment according to the present invention.
本図では入出力の論理レベルが第1図の実施例よりもダ
イオードDlの順方向電圧分だけ■。間に接続された高
抵抗R4により、抵抗R3への接続が異常の場合、出力
OUTの電位は正常な論理レベルのほぼ中央にクランプ
され次段のゲートを確実に誤動作せしむ、Q4のバイア
ス電流が少ないことに起因する速度不良が検出可能とな
る。In this figure, the input/output logic level is higher than in the embodiment of FIG. 1 by the forward voltage of the diode Dl. Due to the high resistor R4 connected between them, if the connection to the resistor R3 is abnormal, the potential of the output OUT is clamped to approximately the center of the normal logic level, and the bias current of Q4 ensures that the gate of the next stage malfunctions. It becomes possible to detect speed defects caused by a small amount of data.
以上説明したように本発明は、出力にエミッタフォロワ
トランジスタを有する電流切換型論理回路に於て該エミ
ッタフォロワのエミッタ、すなわち出力端子から高抵抗
を介して該電流切換型論理回路に接続することにより、
正常動作時にはその機能、性能に何ら影響を与えず、該
エリツタフォロワトランジスタの終端抵抗への接続が異
常である場合にただちに出力レベルをVS!!Fヘクラ
ンプして、次段ゲートを確実に動作不良ならしめ、これ
に起因する速度不良を検出できる効果がある。As explained above, in a current switching type logic circuit having an emitter follower transistor at the output, the emitter of the emitter follower, that is, the output terminal is connected to the current switching type logic circuit through a high resistance. ,
During normal operation, it does not affect its function or performance in any way, and if the connection of the ELISA follower transistor to the termination resistor is abnormal, the output level is immediately changed to VS! ! By clamping to F, it is possible to ensure that the next stage gate is malfunctioning, and to detect speed failures caused by this.
この結果、一般的な低速機能試験にてエミッタフォロワ
のバイアス電流異常に起因する速度不良を確実に除くこ
とが可能となる為、本質的にこれらの不良要因がある確
率でプロセス的に存在する集積回路に於て特にその効果
は大きい。As a result, it is possible to reliably eliminate speed defects caused by emitter follower bias current abnormalities in general low-speed functional tests, so it is possible to reliably eliminate speed defects caused by emitter follower bias current abnormalities. The effect is particularly great in circuits.
第1図は本発明の第1の実施例を示す回路図、第2図は
本発明の第2の実施例を示す回路図、第3図は従来の一
例を示す回路図である。
V ec+ V E+!・・’電源、IN、、IN2・
・・入力端子、OUT・・・出力端子、v R,、・・
・リファレンス電位、工、・・・定電流源、R1−R5
・・・抵抗、Q1〜Q5・・・トランジスタ、Dl・・
・ダイオード。FIG. 1 is a circuit diagram showing a first embodiment of the invention, FIG. 2 is a circuit diagram showing a second embodiment of the invention, and FIG. 3 is a circuit diagram showing a conventional example. V ec+ V E+! ...'Power, IN,,IN2・
...Input terminal, OUT...Output terminal, v R,...
・Reference potential, ... constant current source, R1-R5
...Resistor, Q1-Q5...Transistor, Dl...
·diode.
Claims (1)
ラ電流切換型論理回路に於て、該エミッタフォロワトラ
ンジスタのエミッタ出力を高抵抗を介して該電流切換型
論理回路のリファレンス側トランジスタのベースへ接続
して成ることを特徴とした電流切換型論理回路。A bipolar current switching type logic circuit having an emitter follower transistor at the output, characterized in that the emitter output of the emitter follower transistor is connected to the base of the reference side transistor of the current switching type logic circuit via a high resistance. Current switching type logic circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63198319A JPH0247921A (en) | 1988-08-08 | 1988-08-08 | Current switching type logic circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63198319A JPH0247921A (en) | 1988-08-08 | 1988-08-08 | Current switching type logic circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0247921A true JPH0247921A (en) | 1990-02-16 |
Family
ID=16389140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63198319A Pending JPH0247921A (en) | 1988-08-08 | 1988-08-08 | Current switching type logic circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247921A (en) |
-
1988
- 1988-08-08 JP JP63198319A patent/JPH0247921A/en active Pending
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