JPH0251268B2 - - Google Patents

Info

Publication number: JPH0251268B2
Authority: JP; Japan
Prior art keywords: lead; film; bismuth; counter electrode; superconducting
Prior art date: 1985-02-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP60021924A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61182283A (ja

Inventor

Ichiro Ishida

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

National Institute of Advanced Industrial Science and Technology AIST

Original Assignee

Agency of Industrial Science and Technology

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-02-08

Filing date

1985-02-08

Publication date

1990-11-06

1985-02-08 Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology

1985-02-08 Priority to JP60021924A priority Critical patent/JPS61182283A/ja

1986-08-14 Publication of JPS61182283A publication Critical patent/JPS61182283A/ja

1990-11-06 Publication of JPH0251268B2 publication Critical patent/JPH0251268B2/ja

Status Granted legal-status Critical Current

Links

229910001152 Bi alloy Inorganic materials 0.000 claims description 12
238000004519 manufacturing process Methods 0.000 claims description 8
230000004888 barrier function Effects 0.000 claims description 7
229910052797 bismuth Inorganic materials 0.000 claims description 6
238000000034 method Methods 0.000 claims description 5
238000000151 deposition Methods 0.000 claims description 4
229910045601 alloy Inorganic materials 0.000 claims description 2
239000000956 alloy Substances 0.000 claims description 2
230000015572 biosynthetic process Effects 0.000 claims 1
239000013078 crystal Substances 0.000 description 7
239000010410 layer Substances 0.000 description 5
229910000978 Pb alloy Inorganic materials 0.000 description 3
230000006866 deterioration Effects 0.000 description 3
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000000758 substrate Substances 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000012827 research and development Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Superconductor Devices And Manufacturing Methods Thereof (AREA)

JP60021924A 1985-02-08 1985-02-08 超伝導回路装置の製造方法 Granted JPS61182283A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP60021924A JPS61182283A (ja)	1985-02-08	1985-02-08	超伝導回路装置の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60021924A JPS61182283A (ja)	1985-02-08	1985-02-08	超伝導回路装置の製造方法

Publications (2)

Publication Number	Publication Date
JPS61182283A JPS61182283A (ja)	1986-08-14
JPH0251268B2 true JPH0251268B2 (2)	1990-11-06

Family

ID=12068617

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60021924A Granted JPS61182283A (ja)	1985-02-08	1985-02-08	超伝導回路装置の製造方法

Country Status (1)

Country	Link
JP (1)	JPS61182283A (2)

1985
- 1985-02-08 JP JP60021924A patent/JPS61182283A/ja active Granted

Also Published As

Publication number	Publication date
JPS61182283A (ja)	1986-08-14

Similar Documents

Publication	Publication Date	Title
JPS63226981A (ja)	1988-09-21	超伝導集積回路装置およびその製造方法
JPS58182270A (ja)	1983-10-25	トランジスタの製造方法
JPH05190877A (ja)	1993-07-30	ダイオード素子の製造方法
JPS59138390A (ja)	1984-08-08	超電導スイツチング装置
JPH0251268B2 (2)	1990-11-06
JPS6047478A (ja)	1985-03-14	ジヨセフソン接合素子
JP2688369B2 (ja)	1997-12-10	ジョセフソン接合素子の製造方法
JPS62136018A (ja)	1987-06-19	半導体装置の製造方法
JPH01186657A (ja)	1989-07-26	半導体装置の製造方法
JPH08227743A (ja)	1996-09-03	酸化物超電導体用金属電極
JPS6256676B2 (2)	1987-11-26
KR950009635B1 (ko)	1995-08-25	Mo-C 초박막을 이용한 초전도 전계효과 소자의 제조방법
JP2641966B2 (ja)	1997-08-20	超電導素子および作製方法
JPS59194482A (ja)	1984-11-05	トンネル接合型ジヨセフソン素子
JP3047422B2 (ja)	2000-05-29	ゲート電極形成方法
JP2698364B2 (ja)	1998-01-19	超伝導コンタクトおよびその製造方法
JPS6135577A (ja)	1986-02-20	ジヨセフソン接合素子
JPS63193581A (ja)	1988-08-10	抵抗制御素子
JPS58147183A (ja)	1983-09-01	ジヨセフソン集積回路の製造方法
JP2950958B2 (ja)	1999-09-20	超電導素子の製造方法
JP2738144B2 (ja)	1998-04-08	超電導素子および作製方法
JP2731513B2 (ja)	1998-03-25	超電導素子およびその製造方法
JPH0377670B2 (2)	1991-12-11
JPS60198874A (ja)	1985-10-08	ジヨセフソン接合素子
JPH0256970A (ja)	1990-02-26	薄膜トランジスタとその製造方法

Legal Events

Date	Code	Title	Description
2005-02-08	EXPY	Cancellation because of completion of term