JPH0262006A - Manufacture of metal thin film resistor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a metal thin film resistor widely used in the electronics field.

BACKGROUND OF THE INVENTION Conventionally, gold@4 film resistors have been manufactured by depositing pure metals or alloys on insulating substrates such as glass and porcelain using vacuum techniques such as sputtering and vapor deposition. Although some Ni--P thin films formed by electroless plating have been used, they require activation of the substrate and have drawbacks such as poor physical and mechanical reproducibility and stability. A method has also been developed and put into practical use in which a metal foil is pasted onto a porcelain or glass substrate and a resistor pattern is formed using an etching jig, but this method is large and expensive, so it is only used for special purposes.

Problems to be Solved by the Invention Conventional manufacturing of metal thin film resistors using these vacuum techniques required expensive manufacturing equipment and had problems such as poor productivity due to batch production. .

The present invention solves the above problems and provides a method for manufacturing a metal thin film resistor at low cost and with excellent productivity.

Means for Solving the Problems The present invention provides a method for obtaining a metal thin film resistor by forming a metal-containing compound layer on a substrate and heat-treating the metal oxide obtained by thermal decomposition in a reducing atmosphere. This is a characteristic feature.

Function: By heat-treating the metal oxide obtained by thermal decomposition as described above in a reducing atmosphere, a metal thin film resistor can be obtained at low cost and with good productivity.

Example 1 To explain the present invention in detail, the metal-containing compounds used in the present invention include various alcokinds, various carboxylic acid salts, and various organic compound complexes.

There are various organic compounds such as metallocenes and various inorganic compounds such as nitrates and sulfates.

Various conventionally known coating methods can be employed as means for forming the base metal-containing compound on the substrate. That is, a compound containing a base metal is dissolved in a solvent,
By adding a binder resin as necessary to form an ink, layers can be applied using various conventional coating methods such as screen printing, roll printing, gravure printing, offset printing, spraying, day printing, spin cording, etc. It can be formed on a substrate.

It is a well-known fact that metal thin film resistors can be manufactured with high productivity according to the manufacturing method of the present invention because printing techniques are used, and that the cost of these printing devices is much lower than that of vacuum devices.

Specific examples will be described below.

[Example I]

Ni 2-ethylhexanoate<! :2-ethylhexanoic acid O when the weight ratio of Ni and Cu contained in the compound is 4.
After dissolving in a ketone solvent so as to give Ni:
A Cu oxide layer was formed. The glass was then placed in a tube furnace and heated at 500'C in a nitrogen stream containing 10% hydrogen for 3
Heat treatment was performed for 0 minutes. As a result, a thickness of 1
It was confirmed that a uniform Ni;Cu thin film of 000A was formed. The Ni;Cu@ film obtained here has a volume resistivity of 1.0×10 Ω・α and a low temperature coefficient of resistance (
T, 0. R,) was tsoppm/”C.

[Example 2] Nitric acid N1 and nitric acid Cu are combined with N1 and C contained in the compound.
U is dissolved in an alcoholic solvent at a weight ratio of 40:60, rosin resin is added to the coating to thicken it, screen printed on alumina porcelain, the solvent is dried, and the mixture is exposed to air for 540 minutes. Pyrolyzed at C. Next, this alumina porcelain was subjected to the same reduction treatment as in Example I in a belt furnace, and a N:Cu thin film was obtained on the alumina porcelain.

[Example 3] Ni 2-ethylhexanoate was dissolved in a ketone solvent, thickened by adding a rosin resin, screen printed on soda lime glass, dried the solvent, and then exposed to air for 55 minutes.
Pyrolyzed at 0'C. Next, this glass was subjected to the same reduction treatment as in Example 2, and a thickness of 20 mm was formed on the glass plate.
It was possible to obtain a uniform N1 temperature measuring resistor having 0OA, a volume resistivity of 7.5X10'-n, and a temperature coefficient of resistance (T, 0.R,) of 4950 ppm/'C.

Effects of the Invention As described above, by adopting the manufacturing method according to the present invention, metal thin film resistors can be easily manufactured using only simple equipment such as a printing device and an atmospheric furnace, and the industrial value of the present invention is It's expensive.

Claims (1)

[Claims] Production of a metal thin film resistor, characterized in that a metal-containing compound layer is formed on a substrate, the metal-containing compound layer is thermally decomposed in an oxidizing atmosphere to form a metal oxide, and then heat-treated in a reducing atmosphere. Method.