JPH0273736U - - Google Patents
Info
- Publication number
- JPH0273736U JPH0273736U JP15331088U JP15331088U JPH0273736U JP H0273736 U JPH0273736 U JP H0273736U JP 15331088 U JP15331088 U JP 15331088U JP 15331088 U JP15331088 U JP 15331088U JP H0273736 U JPH0273736 U JP H0273736U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- wet etching
- etching apparatus
- etching
- aluminum wet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示す構成図、第２
図、第３図、第４図は第１図のプラズマ処理機構
を示す概要図である。
Ａ…プラズマ処理機構、Ｂ…エツチング機構、
４…アルミウエツトエツチング室、５…水洗室、
６…乾燥室、７…レシーバー、１１，２１，３１
…プラズマ処理室、１２…上部電極、１３，２３
，３３…ＲＦジエネレータ、１４…半導体装置、
１５…下部電極、２２…同軸電極、２５，３５…
エツチトンネル、３２…対向電極。
Fig. 1 is a configuration diagram showing one embodiment of the present invention;
3 and 4 are schematic diagrams showing the plasma processing mechanism of FIG. 1. A... Plasma processing mechanism, B... Etching mechanism,
4...Aluminum wet etching room, 5...Washing room,
6... Drying room, 7... Receiver, 11, 21, 31
...Plasma processing chamber, 12...Upper electrode, 13, 23
, 33... RF generator, 14... semiconductor device,
15... Lower electrode, 22... Coaxial electrode, 25, 35...
Etchitunnel, 32...Counter electrode.
Claims (1)
処理を行うアルミウエツトエツチング装置におい
て、エツチング処理の前処理として半導体装置の
ぬれ性を改善するプラズマ処理機構を備えたこと
を特徴とするアルミウエツトエツチング装置。 An aluminum wet etching apparatus for etching a pattern formed on a semiconductor device, characterized in that the aluminum wet etching apparatus is equipped with a plasma treatment mechanism for improving the wettability of the semiconductor device as a pretreatment for the etching process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15331088U JPH0273736U (en) | 1988-11-25 | 1988-11-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15331088U JPH0273736U (en) | 1988-11-25 | 1988-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0273736U true JPH0273736U (en) | 1990-06-05 |
Family
ID=31429034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15331088U Pending JPH0273736U (en) | 1988-11-25 | 1988-11-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0273736U (en) |
-
1988
- 1988-11-25 JP JP15331088U patent/JPH0273736U/ja active Pending