JPH03148111A - Developing device for manufacturing semiconductor device - Google Patents
Developing device for manufacturing semiconductor deviceInfo
- Publication number
- JPH03148111A JPH03148111A JP1286292A JP28629289A JPH03148111A JP H03148111 A JPH03148111 A JP H03148111A JP 1286292 A JP1286292 A JP 1286292A JP 28629289 A JP28629289 A JP 28629289A JP H03148111 A JPH03148111 A JP H03148111A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor substrate
- chuck
- developer
- developing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置製造用装置に関し、特にフォトレジ
ストパターニング工程に用いる現像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing semiconductor devices, and particularly to a developing apparatus used in a photoresist patterning process.
従来、半導体装置製造に使用される現像装置に釦いては
、第3図に示すように半導体支持基体(以下チャックと
呼ぶ)3は、半導体基板lよりも小さい寸法のものを用
いていた。Conventionally, in a developing device used for manufacturing semiconductor devices, a semiconductor supporting base (hereinafter referred to as a chuck) 3 has a smaller size than a semiconductor substrate 1, as shown in FIG.
従来、半導体装置製造にかけるフォトレジストパターニ
ングは、半導体基板表両にフォトレジスト膜を付着させ
、目金露光工程によってフォトマスクを介して焼き付は
転写してフォトマスクパターンを半導体基板上のフォト
レジスト膜へ焼キ付け、現像処理によって光の当たった
部分と光の当たらなかった部分とに分離してフォトレジ
ストパターンを形成する。この現像処理に使用されるチ
ャック3は半導体基板1よりも小さいため、半導体基板
l上へ現像液を射出あるいは噴出させ低速回転で現像を
行なうと、第3図に示すように現像液9が半導体基板l
の裏面に廻り込む状態がしばしば生じ、裏面に付着した
現像液の影響で後工程に釦いて半導体装置の歩留り、品
質の低下をもたらしていた。Conventionally, photoresist patterning used in semiconductor device manufacturing involves depositing a photoresist film on both surfaces of a semiconductor substrate, and printing and transferring the photomask pattern through a photomask using a grating exposure process to transfer the photomask pattern to the photoresist on the semiconductor substrate. A photoresist pattern is formed by baking the film and separating it into light-exposed areas and non-exposed areas through a development process. Since the chuck 3 used in this development process is smaller than the semiconductor substrate 1, when the developer is injected or jetted onto the semiconductor substrate l and the development is performed at low speed rotation, the developer 9 is transferred to the semiconductor substrate as shown in FIG. board l
This often occurs, and the developing solution adhering to the back surface causes problems in subsequent processes, resulting in a decline in the yield and quality of semiconductor devices.
本発明の目的は、現像液が半導体基板の裏面に廻シ込む
のを防止することのできる現像装置を提供することにあ
る。An object of the present invention is to provide a developing device that can prevent developer from seeping into the back surface of a semiconductor substrate.
本発明の現像装置はフォトマスクパターンを焼き付は転
写されたフォトレジスト膜を付着した半導体基板を真空
吸着し回転運動させるチャックと半導体基板上のフォト
レジスト膜にパターンを形成させるために現像液を射出
または噴出するノズルとを有する現像装置にかいて、チ
ャックを半導体基板よりも大きなものとしその周辺部に
半導体基板の厚みと同等またはそれ以上の段差を設はチ
ャ、り内で半導体基板を支持することを特徴とする。本
発明によれば裏面への現像液のまわシ込みを防止するこ
とができ、しかも半導体基板表面の全面に安定した現像
をすることができる。The developing device of the present invention includes a chuck that prints a photomask pattern by vacuum suction and rotates a semiconductor substrate to which a transferred photoresist film is attached, and a developer that applies a developer to form a pattern on the photoresist film on the semiconductor substrate. In a developing device having an injection or jetting nozzle, the chuck is larger than the semiconductor substrate, and the semiconductor substrate is supported within the chuck by providing a chuck with a step equal to or greater than the thickness of the semiconductor substrate around the chuck. It is characterized by According to the present invention, it is possible to prevent the developer from spilling onto the back surface, and moreover, it is possible to stably develop the entire surface of the semiconductor substrate.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例を説明するための現像装置の
断面図であり、第2図は第1図の現像装置のチャック部
に載せられた半導体基板の平面図である。この実施例の
現像装置は、半導体基板1の表面に付着されたフォトレ
ジスト膜(図示せず)にフォトマスクパターンの焼き付
は転写が完了した半導体基板lを真空吸着しかつパルス
モータ−2によって回転運動するチャ、り3と、排液口
4を付した下蓋5と、現像液を射出普たは噴出するノズ
ル6および現像後に水洗を行なうための純水を射出ある
いは噴出するノズル7を有した上蓋8とから構成されて
かり、チャック3に真空吸着された半導体基板l上へノ
ズル6から現像液を滴下し表面張力を利用して現像液を
載せた筐ま低速でチャック3を回転させ現像処理を行な
う。このとき、従来の現像装置では半導体基板1よりも
チャック3が小さいため第3図に示すように現像液9が
半導体基板lの裏面に廻り込む状態がしばしば生じてい
たが、本実施例の現像装置では第2図に示すように半導
体基板lよりもチャック3を拡大し第1図に示すように
半導体基板1の厚みと同等の段差を設はチャック3内に
半導体基板lを収容・支持しているので現像液が半導体
基板lの裏面に廻シ込むのを防ぐことができる。FIG. 1 is a cross-sectional view of a developing device for explaining an embodiment of the present invention, and FIG. 2 is a plan view of a semiconductor substrate placed on a chuck portion of the developing device shown in FIG. The developing device of this embodiment burns a photomask pattern onto a photoresist film (not shown) attached to the surface of a semiconductor substrate 1 by vacuum suctioning the semiconductor substrate 1 after the transfer and using a pulse motor 2. A rotatable chamber 3, a lower lid 5 with a drain port 4, a nozzle 6 for injecting or spouting developer, and a nozzle 7 for jetting or spouting pure water for washing with water after development. The developer is dropped from a nozzle 6 onto the semiconductor substrate l vacuum-adsorbed by the chuck 3, and the chuck 3 is rotated at low speed using surface tension to reach the case on which the developer is placed. Then, perform development processing. At this time, in the conventional developing device, since the chuck 3 is smaller than the semiconductor substrate 1, the developer 9 often flows around to the back surface of the semiconductor substrate 1 as shown in FIG. In the apparatus, the chuck 3 is enlarged more than the semiconductor substrate 1 as shown in FIG. 2, and a step equal to the thickness of the semiconductor substrate 1 is provided as shown in FIG. This prevents the developer from seeping into the back surface of the semiconductor substrate l.
第4図は本発明の他の実施例を説明するためのチャック
部分の断崩図である。この実施例の現像装置では、チャ
ック30表面形状を凹状にし、凹状底面にウェハーlを
吸着させ、現像液を十分にためて現像処理を行なう。こ
のことにより、従来問題となっていた表面張力の弱い現
像液による表面ヌレ性の悪さを解消でき、ウェハー企画
に安定した現像ができるという利点がある。FIG. 4 is an exploded view of a chuck portion for explaining another embodiment of the present invention. In the developing device of this embodiment, the chuck 30 has a concave surface shape, the wafer I is attracted to the concave bottom surface, and a sufficient amount of developer is stored to perform the development process. This has the advantage that it is possible to solve the conventional problem of poor surface wettability due to a developer having a low surface tension, and to enable stable development for wafer planning.
以上説明したように本発明はチャックを半導体基板より
も拡大し半導体基板の厚みと同等もしくはそれ以上の段
差を設けてチャック内に半導体基板を収容し支持するこ
とにより、ノズルから滴下された現像液が半導体基板裏
面に逼り込むのを防ぐことができ、またチャック内に現
像液を十分にためて現像処理を行なうことによりウェノ
)−全面−
に安定した現像ができるという効果がある。As explained above, the present invention allows the chuck to be larger than the semiconductor substrate and to accommodate and support the semiconductor substrate within the chuck by providing a step equal to or greater than the thickness of the semiconductor substrate. It is possible to prevent the liquid from penetrating into the back surface of the semiconductor substrate, and by carrying out the development process with a sufficient amount of developer in the chuck, there is an effect that stable development can be performed on the entire surface of the semiconductor substrate.
その結果として、裏面が汚れて生じる半導体収率の低下
や次工程装置の汚れを防止することができ、現像処理の
再現性を向上させ、半導体製品の品質向上に多大なる貢
献を与えることができる。As a result, it is possible to prevent a decrease in semiconductor yield caused by dirt on the back side and dirt on the next process equipment, improve the reproducibility of the development process, and make a significant contribution to improving the quality of semiconductor products. .
第1図は本発明の一実施例の現像装置の断面図、第2図
は第1図のチャック部の平面図、第3図は従来の現像装
置のチャック部の断面図、第4図は本発明の他の実施例
のチャック部の断面図である。
尚、図にかいて
l・・・・・・半導体基板、2・・・・・・パルスモー
タ−13・・・・・・チャック、4・・・・・・排液口
、5・・・・・・下蓋、6・・・・・・現像液噴出ノズ
ル、7・・・・・・純水ノズル、8・・・・・・上蓋、
9・・・・・・現像液。FIG. 1 is a cross-sectional view of a developing device according to an embodiment of the present invention, FIG. 2 is a plan view of the chuck portion of FIG. 1, FIG. 3 is a cross-sectional view of the chuck portion of a conventional developing device, and FIG. FIG. 7 is a cross-sectional view of a chuck part according to another embodiment of the present invention. In addition, in the figure, 1...semiconductor substrate, 2...pulse motor 13...chuck, 4...drain port, 5... ...Lower lid, 6...Developer jet nozzle, 7...Pure water nozzle, 8...Top lid,
9...Developer.
Claims (1)
スト膜を付着した半導体基板を真空吸着し回転運動させ
る基体と前記半導体基板上のフォトレジスト膜に現像液
を供給するノズルとを有する半導体装置製造用現像装置
において、前記基体の面積を前記半導体基板の面積より
も大きくしかつ周辺に半導体基板の厚みと同等以上の段
差を設け、前記基体内で前記半導体基板を支持すること
を特徴とする半導体装置製造用現像装置。A developing device for manufacturing semiconductor devices comprising a base body for vacuum-chucking and rotating a semiconductor substrate to which a photoresist film on which a photomask pattern has been printed and transferred is attached, and a nozzle for supplying a developer to the photoresist film on the semiconductor substrate. , a developing device for manufacturing a semiconductor device, characterized in that the area of the base is larger than the area of the semiconductor substrate, and a step is provided around the periphery that is equal to or more than the thickness of the semiconductor substrate, and the semiconductor substrate is supported within the base. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286292A JPH03148111A (en) | 1989-11-02 | 1989-11-02 | Developing device for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1286292A JPH03148111A (en) | 1989-11-02 | 1989-11-02 | Developing device for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03148111A true JPH03148111A (en) | 1991-06-24 |
Family
ID=17702492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1286292A Pending JPH03148111A (en) | 1989-11-02 | 1989-11-02 | Developing device for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03148111A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7611581B2 (en) * | 2004-11-29 | 2009-11-03 | Tokyo Ohka Kogyo Co., Ltd. | Coating apparatus, coating method and coating-film forming apparatus |
-
1989
- 1989-11-02 JP JP1286292A patent/JPH03148111A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7611581B2 (en) * | 2004-11-29 | 2009-11-03 | Tokyo Ohka Kogyo Co., Ltd. | Coating apparatus, coating method and coating-film forming apparatus |
| US8132526B2 (en) | 2004-11-29 | 2012-03-13 | Tokyo Ohka Kogyo Co., Ltd. | Coating apparatus, coating method and coating-film forming appratus |
| US8449945B2 (en) | 2004-11-29 | 2013-05-28 | Tokyo Ohka Kogyo Co., Ltd. | Coating apparatus, coating method and coating-film forming apparatus |
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