JPH03212902A - Resistor composition - Google Patents
Resistor compositionInfo
- Publication number
- JPH03212902A JPH03212902A JP2009449A JP944990A JPH03212902A JP H03212902 A JPH03212902 A JP H03212902A JP 2009449 A JP2009449 A JP 2009449A JP 944990 A JP944990 A JP 944990A JP H03212902 A JPH03212902 A JP H03212902A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- paste
- composition
- weight
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 abstract description 12
- 239000004020 conductor Substances 0.000 abstract description 11
- 239000011230 binding agent Substances 0.000 abstract description 9
- 230000001590 oxidative effect Effects 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000011812 mixed powder Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 101150027751 Casr gene Proteins 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- -1 alkaline earth metal carbonates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は抵抗体組成物に関し、特にたとえば非酸化雰
囲気中で焼成することによって、厚膜抵抗体またはこれ
に類似の抵抗体を形成することができる、抵抗体組成物
に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a resistor composition, and particularly to a resistor composition for forming a thick film resistor or similar resistor by firing in a non-oxidizing atmosphere, for example. The present invention relates to a resistor composition that can be used.
（従来技術）
従来の抵抗体組成物としては、たとえばＮｉＯと、Ｌｉ
ｔ ｏ、Ｂ２０３ 、Ｓ ｉｏ□、ＲＯ（ＲはＭ ｇ
＋ Ｃａ ＋ Ｓ ｒ 、Ｂ ａの中から選ばれる
１種類）などで構成されるガラスとを含むものがあった
。(Prior Art) Conventional resistor compositions include, for example, NiO and Li.
to, B203, S io□, RO (R is M g
+ Ca + S r , one type selected from Ba), etc.
このような抵抗体組成物を用いたセラミクスグリーンシ
ートに卑金属である銅の導体ペーストを塗布し、ＮｉＯ
とガラスを含む抵抗体ペーストを塗布したものを非酸化
雰囲気中で焼成する方法がある。このようにすることに
よって、厚膜導体と厚膜抵抗体とを同時に形成した多層
セラミクス回路基板を得ることができる。A conductive paste of copper, which is a base metal, is applied to a ceramic green sheet using such a resistor composition, and NiO
There is a method of applying a resistor paste containing glass and sintering it in a non-oxidizing atmosphere. By doing so, it is possible to obtain a multilayer ceramic circuit board in which a thick film conductor and a thick film resistor are formed simultaneously.
（発明が解決しようとする課題）
しかしながら、このような抵抗体組成物を用いた厚膜抵
抗体では、十分な耐湿特性を得ることができない。たと
えば、温度６０℃、相対湿度９５％の環境下に１０００
時間放置した場合の抵抗変化率は＋５％〜＋１０％程度
になる。(Problems to be Solved by the Invention) However, with a thick film resistor using such a resistor composition, sufficient moisture resistance cannot be obtained. For example, in an environment with a temperature of 60°C and a relative humidity of 95%,
The rate of change in resistance when left for a period of time is approximately +5% to +10%.
それゆえに、この発明の主たる目的は、非酸化雰囲気中
で焼成して抵抗体を形成することができ、かつ耐湿試験
における抵抗変化率が±２％以内の抵抗体を得ることが
できる、抵抗体組成物を提供することである。Therefore, the main object of the present invention is to provide a resistor which can be fired in a non-oxidizing atmosphere to form a resistor, and which can have a resistance change rate within ±2% in a humidity test. An object of the present invention is to provide a composition.
（課題を解決するための手段）
この発明は、一般式がＮｉ、、。□ＬｉｘＯで表され、
Ｘが、０．００１＜ｘ＜０．１５の範囲にある磁器半導
体を５０〜９５重量部と、一般式がａＬｉ２０＋ｂＲＯ
＋ｃＢｚ Ｏｗｌ ＋ （１００−ａｂ ｃ）Ｓｉｎ
２ （ただし、ＲはＭｇ、ＣａＳｒ、Ｂａの中から選ば
れる少なくとも１種類、ａ、ｂおよびＣはモル％）で表
され、ａ、ｂおよびＣが、それぞれ、０≦ａ〈２０．１
０≦ｂ＜５５．０≦Ｃく４０の範囲にあるガラスを５〜
５０重量部とを含む、抵抗体組成物である。(Means for Solving the Problem) This invention has a general formula of Ni. □Represented by LixO,
50 to 95 parts by weight of a ceramic semiconductor in which X is in the range of 0.001<x<0.15, and the general formula is aLi20+bRO
+cBz Owl + (100-ab c)Sin
2 (wherein R is at least one selected from Mg, CaSr, and Ba, a, b, and C are mol%), and a, b, and C are each 0≦a<20.1
Glass in the range of 0≦b<55.0≦C40
50 parts by weight.
（発明の効果）
この発明の抵抗体組成物をペースト状にした抵抗体材料
を絶縁体セラミクスからなるグリーンシート上に印刷し
、非酸化雰囲気中で焼成すれば、耐湿試験における抵抗
変化率が±２％以内の厚膜抵抗体を得ることができる。(Effects of the Invention) If a resistor material made of a paste of the resistor composition of the present invention is printed on a green sheet made of insulating ceramics and fired in a non-oxidizing atmosphere, the rate of change in resistance in a humidity test will be ± A thick film resistor with a thickness of 2% or less can be obtained.
したがって、卑金属である銅の導体ペーストによる厚膜
導体の形成と同時に、抵抗変化率の小さい厚膜抵抗体を
形成することができる。Therefore, a thick film resistor with a small resistance change rate can be formed simultaneously with the formation of a thick film conductor using conductor paste of copper, which is a base metal.
この発明の上述の目的、その他の目的、特徴および利点
は、図面を参照して行う以下の実施例の詳細な説明から
一層明らかとなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
（実施例）
まず、ガラスの原料として、二酸化珪素（ＳｉＯｔ）、
酸化ホウ素（Ｂｔｏ、）、炭酸リチウム（Ｌ ｉ ｔ
ＣＯｘ ）およびアルカリ土類金属の炭酸塩を準備した
。これらの原料を表１に示す割合となるように秤量し、
ボールミルで１６時間湿式混合した後、蒸発乾燥して混
合粉末を得た。得られた混合粉末をアルミナ性のるつぼ
に入れて１３００℃で１時間放置し、急冷してガラス化
した。そして、２００メツシユの篩を通過するようにボ
ールミルを用いて粉砕し、ガラス粉末を得た。(Example) First, silicon dioxide (SiOt),
Boron oxide (Bto), lithium carbonate (L it
COx) and alkaline earth metal carbonates were prepared. Weigh these raw materials in the proportions shown in Table 1,
After wet mixing in a ball mill for 16 hours, the mixture was evaporated and dried to obtain a mixed powder. The obtained mixed powder was placed in an alumina crucible and left at 1300° C. for 1 hour, then rapidly cooled and vitrified. Then, the powder was ground using a ball mill so as to pass through a 200-mesh sieve to obtain a glass powder.
次に、磁器半導体の原料として、酸化ニッケル（Ｎ ｉ
Ｏ）および炭酸リチウム（Ｌ ｉ ｚ Ｃｏａ＋ ）
を準備した。これらの原料を表１に示す組成となるよう
に秤量し、ボールミルで１６時間湿式混合した後、蒸発
乾燥して混合粉末を得た。得られた混合粉末をジルコニ
ア質の匣に入れて１４００℃で２時間焼成した後、２０
０メツシユの篩を通過するようにボールミルを用いて粉
砕し、磁器半導体粉末を得た。Next, nickel oxide (Ni
O) and lithium carbonate (L iz Coa+)
prepared. These raw materials were weighed to have the composition shown in Table 1, wet mixed in a ball mill for 16 hours, and then evaporated to dryness to obtain a mixed powder. The obtained mixed powder was placed in a zirconia box and fired at 1400°C for 2 hours.
The powder was ground using a ball mill so as to pass through a 0 mesh sieve to obtain a porcelain semiconductor powder.
得られたガラス粉末と磁器半導体粉末とを表１に示す重
量部となるように秤量し、ボールミルで４時間湿式混合
した後、蒸発乾燥してガラス粉末と磁器半導体粉末との
混合粉末を得た。また、有機結合剤としてのエチルセル
ロース１０重ｔＳを溶剤としてのブチルカルピトール９
０重量部に溶かしたものからなる有機バインダ溶液を準
備した。The obtained glass powder and porcelain semiconductor powder were weighed to have the parts by weight shown in Table 1, wet mixed in a ball mill for 4 hours, and then evaporated to dryness to obtain a mixed powder of glass powder and porcelain semiconductor powder. . In addition, ethyl cellulose 10 weight tS as an organic binder and butyl carpitol 9 as a solvent.
An organic binder solution containing 0 parts by weight of the organic binder was prepared.
そして、ガラス粉末と磁器半導体粉末との混合粉末１０
０重量部に有機バインダ溶液２５重量部を加えて、３本
ロールミルで混練して抵抗体ペーストを得た。And mixed powder 10 of glass powder and ceramic semiconductor powder
25 parts by weight of an organic binder solution was added to 0 parts by weight and kneaded in a three-roll mill to obtain a resistor paste.
一方、上述の抵抗体ペーストを印刷するためのグリーン
シートを次の方法で作製した。まず、酸化珪素５５重量
部、酸化バリウム３０重量部、酸化アルミニウム５重量
部、酸化ホウ素５重量部。On the other hand, a green sheet for printing the above-mentioned resistor paste was produced by the following method. First, 55 parts by weight of silicon oxide, 30 parts by weight of barium oxide, 5 parts by weight of aluminum oxide, and 5 parts by weight of boron oxide.
酸化カルシウム５重量部からなるセラミクス原料粉末、
アクリル系バインダおよび有機溶剤としてのトルエンを
準備した。これらの材料を秤量してボールミルで２４時
間混合した後脱泡処理し、ドクターブレード法によって
厚さ２００μｍのグリーンシートを作製した。そして、
このグリーンシートから２０ｍｍＸ２０ｍのグリーンシ
ート片を切り抜いた。Ceramics raw material powder consisting of 5 parts by weight of calcium oxide,
An acrylic binder and toluene as an organic solvent were prepared. These materials were weighed and mixed in a ball mill for 24 hours, followed by defoaming treatment, and a green sheet with a thickness of 200 μm was produced using a doctor blade method. and,
A green sheet piece measuring 20 mm x 20 m was cut out from this green sheet.
また、次のような方法で銅の導体ペーストを作製した。In addition, a copper conductor paste was produced by the following method.
まず、銅粉末と有機バインダ溶液とを準備した。有機バ
インダ溶液は、有機結合剤としてのエチルセルロース１
０重量部を溶剤としてのテレピン油９０重量部に溶かし
て作製した。そして、銅粉末１００重量部に有機バイン
ダ溶液２５重量部を加えて、３本ロールミルで混練して
導体ぺ一ストを得た。First, copper powder and an organic binder solution were prepared. The organic binder solution contains ethyl cellulose 1 as an organic binder.
It was prepared by dissolving 0 parts by weight in 90 parts by weight of turpentine oil as a solvent. Then, 25 parts by weight of an organic binder solution was added to 100 parts by weight of copper powder, and the mixture was kneaded in a three-roll mill to obtain a conductor paste.
次に、第１図に示すように、グリーンシート片１０の一
方主面上に、間隔を隔てて導体ペースト１２を印刷した
。導体ペースト１２は、２００メツシユのスクリーンを
用いて印刷し、１２０℃で５分間乾燥した。その後、一
部分が２つの導体ペースト１２に重なるように、グリー
ンシート片１０上に抵抗体ペースト１４を印刷した。抵
抗体ペースト１４は、２００メツシユのスクリーンを用
いて印刷し、１２０℃で５分間乾燥した。なお、抵抗体
ペースト１４の導体ペースト１２に重なっていない部分
の大きさは４ ｗａｓ Ｘ ６ ｉｎであり、厚さは２
０μｍである。Next, as shown in FIG. 1, conductor pastes 12 were printed on one main surface of the green sheet piece 10 at intervals. The conductive paste 12 was printed using a 200 mesh screen and dried at 120° C. for 5 minutes. Thereafter, a resistor paste 14 was printed on the green sheet piece 10 so that a portion thereof overlapped with the two conductor pastes 12. The resistor paste 14 was printed using a 200 mesh screen and dried at 120° C. for 5 minutes. Note that the size of the portion of the resistor paste 14 that does not overlap with the conductor paste 12 is 4 was x 6 inches, and the thickness is 2
It is 0 μm.
さらに、第２図に示すように、グリーンシート片１０の
上に別のグリーンシート片１６を積層し、８０℃、
４００ ｋｇ／ｃｉで熱圧着して生ユニットを形成した
。この生ユニットのグリーンシート片１６の導体ペース
ト１２に対応する部分に、スルーホール１８を形成した
。そして、スルーホール１８の内壁とグリーンシート片
１６のスルーホール１８周辺部に導体ペーストを２００
メツシユのスクリーンで印刷し、電極パッド２０を形成
した。Furthermore, as shown in FIG. 2, another green sheet piece 16 is laminated on top of the green sheet piece 10, and
A green unit was formed by thermocompression bonding at 400 kg/ci. A through hole 18 was formed in a portion of the green sheet piece 16 of this green unit corresponding to the conductive paste 12. Then, apply 200 ml of conductive paste to the inner wall of the through hole 18 and the surrounding area of the through hole 18 of the green sheet piece 16.
The electrode pads 20 were formed by printing with a mesh screen.
得られた生ユニットをＮ２およびＨ，Ｏの混合ガスを用
いて電気炉中で９４０〜１０２０℃で２時間焼成し、厚
膜抵抗体を内蔵したセラミクス基板を作製した。そして
、２５℃におけるセラミクス基板内の抵抗体の抵抗値Ｒ
１をデジタルマルチメータで測定し、抵抗体の焼成後の
寸法からシート抵抗を算出して表２に示した。The obtained green unit was fired in an electric furnace at 940 to 1020° C. for 2 hours using a mixed gas of N2, H, and O to produce a ceramic substrate containing a thick film resistor. Then, the resistance value R of the resistor in the ceramic substrate at 25°C
1 was measured with a digital multimeter, and the sheet resistance was calculated from the dimensions of the resistor after firing, and is shown in Table 2.
次に、これらの試料を温度６０℃、相対湿度９０％の環
境下に１０００時間放置したのち、デジタルマルチメー
タで抵抗体の抵抗値を測定し、Ｒ２とした。そして、耐
湿試験による抵抗体の抵抗変化率ΔＲを次式で求めた。Next, these samples were left in an environment with a temperature of 60° C. and a relative humidity of 90% for 1000 hours, and then the resistance value of the resistor was measured using a digital multimeter and was determined as R2. Then, the resistance change rate ΔR of the resistor in the humidity test was determined using the following equation.
ΔＲ＝ １００ （Ｒｚ −Ｒ＋ ） ／Ｒ＋そして、
これらの結果を表２に示した。ΔR= 100 (Rz −R+) /R+ and
These results are shown in Table 2.
次に、各成分の組成範囲を限定した理由について説明す
る。Next, the reason for limiting the composition range of each component will be explained.
磁器半導体において、試料番号１に示すようにＬｉの比
率Ｘが０．００１以下になるか、試料番号６のようにＸ
が０．１５以上になると、抵抗変化率ΔＲが±２％より
大きくなる。In ceramic semiconductors, the Li ratio X is 0.001 or less as shown in sample number 1, or
When becomes 0.15 or more, the resistance change rate ΔR becomes larger than ±2%.
また、試料番号１２のように、ガラスに対する磁器半導
体の含有量が５０重量部より少ないと、抵抗値が大きく
なりすぎる。また、試料番号７のように、ガラスに対す
る磁器半導体の含有量が９５重量部より多くなると、緻
密に焼結することができなくなる。Further, as in sample number 12, when the content of the ceramic semiconductor relative to the glass is less than 50 parts by weight, the resistance value becomes too large. Further, as in Sample No. 7, when the content of the ceramic semiconductor to the glass exceeds 95 parts by weight, it becomes impossible to sinter the glass in a dense manner.
さらに、ガラスにおけるＬｉｚＯ成分、ＲＯ酸成分よび
Ｂ、０３成分の組成範囲ａ、ｂおよびＣを限定した理由
について説明する。つまり、試料番号１４のようにａが
２０モル％以上になるか、試料番号２８〜３１のように
ｂが５５モル％以上になるか、または試料番号３４のよ
うにＣが４０モル％以上になると、抵抗値が大きくなり
すぎる。Furthermore, the reason why the composition ranges a, b, and C of the LizO component, RO acid component, and B and 03 components in the glass are limited will be explained. In other words, a is 20 mol% or more as in sample number 14, b is 55 mol% or more as in sample numbers 28 to 31, or C is 40 mol% or more as in sample number 34. Then, the resistance value becomes too large.
また、試料番号２０〜２３のようにｂが１０モル％より
少ないと、抵抗体が緻密に焼結しない。Further, when b is less than 10 mol % as in sample numbers 20 to 23, the resistor is not sintered densely.
それに対して、この発明の抵抗体組成物を用いれば、非
酸化雰囲気中で焼成して抵抗体を形成することができ、
しかも抵抗変化率が±２％以下の抵抗体を得ることがで
きる。On the other hand, if the resistor composition of the present invention is used, a resistor can be formed by firing in a non-oxidizing atmosphere.
Furthermore, a resistor having a resistance change rate of ±2% or less can be obtained.
第１図はグリーンシート片上に導体ペーストおよび抵抗
体ペーストを印刷した状態を示す斜視図である。
第２図はこの発明の抵抗体組成物を用いた抵抗体の抵抗
値を測定するために作製された生ユニットの斜視図であ
る。
図において、１０および１６はグリーンシート片、１２
は導体ペースト、１４は抵抗体ペースト、Ｉ８はスルー
ホール、２０は電極パッドを示す。FIG. 1 is a perspective view showing a state in which conductor paste and resistor paste are printed on a piece of green sheet. FIG. 2 is a perspective view of a raw unit manufactured for measuring the resistance value of a resistor using the resistor composition of the present invention. In the figure, 10 and 16 are green sheet pieces, 12
14 is a conductor paste, 14 is a resistor paste, I8 is a through hole, and 20 is an electrode pad.
Claims (1)
、ｘが０．００１＜ｘ＜０．１５ の範囲にある磁器半導体を５０〜９５重量部、および 一般式がａＬｉ＿２Ｏ＋ｂＲＯ＋ｃＢ＿２Ｏ＿３＋（１
００−ａ−ｂ−ｃ）ＳｉＯ＿２（ただし、ＲはＭｇ、Ｃ
ａ、Ｓｒ、Ｂａの中から選ばれる少なくとも１種類、ａ
、ｂおよびｃはモル％）で表され、ａ、ｂおよびｃが、
それぞれ ０≦ａ＜２０ １０≦ｂ＜５５ ０≦ｃ＜４０ の範囲にあるガラスを５〜５０重量部含む、抵抗体組成
物。[Claims] The general formula is Ni_1_. 50 to 95 parts by weight of a ceramic semiconductor represented by _0_−_xLi_xO, where x is in the range of 0.001<x<0.15, and whose general formula is aLi_2O+bRO+cB_2O_3+(1
00-a-b-c) SiO_2 (where R is Mg, C
At least one type selected from a, Sr, and Ba, a
, b and c are expressed as mol%), and a, b and c are
A resistor composition containing 5 to 50 parts by weight of glass in the ranges of 0≦a<20, 10≦b<55, and 0≦c<40, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009449A JPH03212902A (en) | 1990-01-17 | 1990-01-17 | Resistor composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009449A JPH03212902A (en) | 1990-01-17 | 1990-01-17 | Resistor composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03212902A true JPH03212902A (en) | 1991-09-18 |
Family
ID=11720603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009449A Pending JPH03212902A (en) | 1990-01-17 | 1990-01-17 | Resistor composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03212902A (en) |
-
1990
- 1990-01-17 JP JP2009449A patent/JPH03212902A/en active Pending
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