JPH0321844U - - Google Patents
Info
- Publication number
- JPH0321844U JPH0321844U JP8284289U JP8284289U JPH0321844U JP H0321844 U JPH0321844 U JP H0321844U JP 8284289 U JP8284289 U JP 8284289U JP 8284289 U JP8284289 U JP 8284289U JP H0321844 U JPH0321844 U JP H0321844U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- susceptor
- heater cover
- heater
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Description
第１図は本考案装置の一実施例の構成を示す簡
略縦断面図、第２図は本考案におけるウエーハの
温度分布の説明図、第３図は従来装置の一例の構
成を示す簡略縦断面図、第４図は従来におけるウ
エーハの温度分布の説明図である。
１…反応室、２…サセプタ、３…ウエーハ、４
…ヒータカバー、５…ヒータ、６…リング状回転
部、７…回転駆動部、１２…支承部。
Fig. 1 is a simplified vertical cross-sectional view showing the configuration of an embodiment of the device of the present invention, Fig. 2 is an explanatory diagram of the temperature distribution of the wafer in the present invention, and Fig. 3 is a simplified vertical cross-sectional view showing the configuration of an example of the conventional device. FIG. 4 is an explanatory diagram of the temperature distribution of a wafer in the related art. 1... Reaction chamber, 2... Susceptor, 3... Wafer, 4
... Heater cover, 5... Heater, 6... Ring-shaped rotating part, 7... Rotation drive part, 12... Supporting part.
Claims (1)
セプタ２上のウエーハ３をヒータカバー４で仕切
られたヒータ５により加熱し、かつ当該サセプタ
２を回転することによりウエーハ３に薄膜を生成
する化学気相生成装置において、反応室１にリン
グ状回転部６を支承し、この回転部６にヒータカ
バー４を取付け、このヒータカバー４上にはウエ
ーハ３を載置したサセプタ２を設置すると共にリ
ング状回転部６に回転駆動部７を連結せしめてな
る化学気相生成装置。 A reaction gas is introduced into the reaction chamber 1 while being exhausted, the wafer 3 on the susceptor 2 is heated by a heater 5 partitioned by a heater cover 4, and the susceptor 2 is rotated to generate a thin film on the wafer 3. In a chemical vapor phase generation apparatus, a ring-shaped rotating part 6 is supported in a reaction chamber 1, a heater cover 4 is attached to this rotating part 6, and a susceptor 2 on which a wafer 3 is placed is installed on this heater cover 4. A chemical vapor phase generation device comprising a ring-shaped rotating section 6 and a rotational drive section 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8284289U JPH0321844U (en) | 1989-07-14 | 1989-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8284289U JPH0321844U (en) | 1989-07-14 | 1989-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0321844U true JPH0321844U (en) | 1991-03-05 |
Family
ID=31630008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8284289U Pending JPH0321844U (en) | 1989-07-14 | 1989-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0321844U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006222372A (en) * | 2005-02-14 | 2006-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Oxidizing furnace system |
-
1989
- 1989-07-14 JP JP8284289U patent/JPH0321844U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006222372A (en) * | 2005-02-14 | 2006-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Oxidizing furnace system |
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