JPH0464801U

JPH0464801U -

Info

Publication number: JPH0464801U
Application number: JP10640590U
Authority: JP
Priority date: 1990-10-09
Filing date: 1990-10-09
Publication date: 1992-06-04

Description

[Brief explanation of the drawing]

第１図、第２図はこの考案の一実施例による高
周波用パツケージを示す断面図と平面図、第３図
、第４図はこの考案の他の実施例による高周波パ
ツケージを示す断面図と平面図、第５図、第６図
は従来の高周波パツケージを示す断面図と平面図
である。図中、１はパツケージのベース部、１ａは底部
切欠き部、１ｂは貫通部、４はＭＭＩＣ、７はＲ
Ｆ信号入力端子、８はＲＦ出力端子、９はＤＣバ
イアス印加端子、１０はＤＣバイアス用多層基板
、１１はＲＦ線路用基板である。なお、図中同一
符号は同一又は相当部分を示す。 1 and 2 are a sectional view and a plan view showing a high frequency package according to one embodiment of this invention, and FIGS. 3 and 4 are a sectional view and a plan view showing a high frequency package according to another embodiment of this invention. 5 and 6 are a sectional view and a plan view showing a conventional high frequency package. In the figure, 1 is the base part of the package, 1a is the bottom notch, 1b is the through part, 4 is the MMIC, and 7 is the R
An F signal input terminal, 8 an RF output terminal, 9 a DC bias application terminal, 10 a multilayer substrate for DC bias, and 11 an RF line substrate. Note that the same reference numerals in the figures indicate the same or equivalent parts.

補正平３．１０．９実用新案登録請求の範囲を次のように補正する
。Amendment 3/10/9 The scope of claims for utility model registration is amended as follows.

【実用新案登録請求の範囲】ＲＦ信号入力端子より入力したＲＦ信号がＭＭ
ＩＣを介してＲＦ入力端子より出力されるととも
に、ＤＣバイアス印加端子より入力されたＭＭＩ
Ｃ制御信号によりＭＭＩＣを制御する高周波用パ
ツケージにおいて、高周波用パツケージの底部に
切欠き部を形成し、この切欠き部にＤＣバイアス
回路用多層基板を配置し、ＤＣバイアス線路をベ
ース下部を通すことにより、ＲＦ線路とＤＣバイ
アス線路がパツケージの内部で交わらないように
したことを特徴とする高周波用パツケージ。[Scope of claim for utility model registration] If the RF signal input from the RF signal input terminal is MM
MMI output from the RF input terminal via the IC and input from the DC bias application terminal
In a high-frequency package that controls an MMIC using a C control signal, a notch is formed at the bottom of the high -frequency package, a multilayer substrate for a DC bias circuit is placed in the notch, and a DC bias line is passed through the bottom of the base. A high-frequency package characterized in that the RF line and the DC bias line do not intersect inside the package.

Claims

[Scope of utility model registration request]

The RF signal input from the RF signal input terminal is MM
MMI output from the RF output terminal via the IC and input from the DC bias application terminal
In a high frequency package that controls an MMIC using a C control signal, a notch is formed at the bottom of the high frequency package, a multilayer substrate for a DC bias circuit is placed in this notch, and the DC bias line is passed through the bottom of the base. , a high frequency package characterized in that the RF line and the DC bias line do not intersect inside the package.