JPH0323520B2 - - Google Patents

Info

Publication number
JPH0323520B2
JPH0323520B2 JP57104945A JP10494582A JPH0323520B2 JP H0323520 B2 JPH0323520 B2 JP H0323520B2 JP 57104945 A JP57104945 A JP 57104945A JP 10494582 A JP10494582 A JP 10494582A JP H0323520 B2 JPH0323520 B2 JP H0323520B2
Authority
JP
Japan
Prior art keywords
substrate
solution
group compound
oxide
solution containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57104945A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58223625A (ja
Inventor
Susumu Furuike
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57104945A priority Critical patent/JPS58223625A/ja
Publication of JPS58223625A publication Critical patent/JPS58223625A/ja
Publication of JPH0323520B2 publication Critical patent/JPH0323520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
JP57104945A 1982-06-17 1982-06-17 ３−５族化合物基体の表面処理方法 Granted JPS58223625A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57104945A JPS58223625A (ja) 1982-06-17 1982-06-17 ３−５族化合物基体の表面処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104945A JPS58223625A (ja) 1982-06-17 1982-06-17 ３−５族化合物基体の表面処理方法

Publications (2)

Publication Number Publication Date
JPS58223625A JPS58223625A (ja) 1983-12-26
JPH0323520B2 true JPH0323520B2 (de) 1991-03-29

Family

ID=14394222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104945A Granted JPS58223625A (ja) 1982-06-17 1982-06-17 ３−５族化合物基体の表面処理方法

Country Status (1)

Country Link
JP (1) JPS58223625A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231723A (ja) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法

Also Published As

Publication number Publication date
JPS58223625A (ja) 1983-12-26

Similar Documents

Publication Publication Date Title
US3867218A (en) Method of etching a pattern in a silicon nitride layer
JPH0775266B2 (ja) 半導体レーザのエッチング・ミラー・ファセットを不動態化する方法
JPS56104488A (en) Semiconductor laser element
CA1299983C (en) Passivation of gallium arsenide surfaces
US4256520A (en) Etching of gallium stains in liquid phase epitoxy
KR20030004089A (ko) 질화물 반도체의 제조 방법 및 반도체소자의 제조 방법
CN109698123A (zh) 一种GaAs基LED晶片的衬底腐蚀方法
US4943540A (en) Method for selectively wet etching aluminum gallium arsenide
JPH0323520B2 (de)
US5969419A (en) Structure comprising platinum layer bound to a surface of a silicon oxide layer
CN113823992B (zh) 半导体器件制造方法及半导体器件
JPS5881973A (ja) 金−ゲルマニウム合金膜のエツチング方法
JPH10312988A (ja) 化合物半導体膜のエッチング方法
JPH02210830A (ja) ＧａＡｓ基板の表面処理方法
JPH0313739B2 (de)
JPS6214033B2 (de)
KR950004971B1 (ko) 산화막 건식 식각후 잔류물 제거방법
JPH01268174A (ja) 発光素子の製造方法
JPH0817788A (ja) 半導体素子の製造方法
JP3487282B2 (ja) 化合物半導体の電極製造方法
JPH06196473A (ja) 半導体装置の表面処理方法
JPH0554259B2 (de)
JPS5923106B2 (ja) 半導体装置の製造方法
JPS61231723A (ja) 化合物半導体の表面処理方法
JPH05234982A (ja) 化合物半導体基板のエッチング方法