JPH0325029B2 - - Google Patents
Info
- Publication number
- JPH0325029B2 JPH0325029B2 JP60063431A JP6343185A JPH0325029B2 JP H0325029 B2 JPH0325029 B2 JP H0325029B2 JP 60063431 A JP60063431 A JP 60063431A JP 6343185 A JP6343185 A JP 6343185A JP H0325029 B2 JPH0325029 B2 JP H0325029B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- base
- film
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063431A JPS61224365A (ja) | 1985-03-29 | 1985-03-29 | 半導体装置 |
| US06/839,349 US4785340A (en) | 1985-03-29 | 1986-03-13 | Semiconductor device having doping multilayer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60063431A JPS61224365A (ja) | 1985-03-29 | 1985-03-29 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61224365A JPS61224365A (ja) | 1986-10-06 |
| JPH0325029B2 true JPH0325029B2 (sr) | 1991-04-04 |
Family
ID=13229077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60063431A Granted JPS61224365A (ja) | 1985-03-29 | 1985-03-29 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61224365A (sr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611056B2 (ja) * | 1985-12-03 | 1994-02-09 | 富士通株式会社 | 高速半導体装置 |
-
1985
- 1985-03-29 JP JP60063431A patent/JPS61224365A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61224365A (ja) | 1986-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |