JPH03250603A - Thermistor - Google Patents
ThermistorInfo
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- JPH03250603A JPH03250603A JP34366189A JP34366189A JPH03250603A JP H03250603 A JPH03250603 A JP H03250603A JP 34366189 A JP34366189 A JP 34366189A JP 34366189 A JP34366189 A JP 34366189A JP H03250603 A JPH03250603 A JP H03250603A
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- thermistor
- glass layer
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は使用温度範囲内における温度上昇にともなって
抵抗値が減少するサーミスタに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thermistor whose resistance value decreases as the temperature rises within the operating temperature range.
特に、サーミスタの素子構造に関する。サーミスタは、
電子機器の温度補償、表面温度測定センサその他に利用
される。In particular, it relates to the element structure of a thermistor. The thermistor is
Used for temperature compensation of electronic equipment, surface temperature measurement sensors, etc.
本発明は、使用温度範囲内における温度上昇にともなっ
て抵抗値が減少するサーミスタにおいて、電極が接触す
る部分以外のサーミスタ素体の表面をガラス層で被覆し
、電極をメッキにより形成することにより、
ハンダ付着性およびハンダ耐熱性に優れ、かつ抵抗値の
バラツキが小さいサーミスタ素子を提供するものである
。The present invention provides a thermistor whose resistance value decreases as the temperature rises within the operating temperature range, by covering the surface of the thermistor body other than the part where the electrodes come into contact with a glass layer, and forming the electrodes by plating. The present invention provides a thermistor element that has excellent solder adhesion and solder heat resistance, and has small variations in resistance value.
サーミスタは、負の大きな抵抗温度係数をもち、使用温
度範囲内における温度上昇にともなって抵抗値が減少す
る。この特性を利用して、例えば通信義器では、発振周
波数の温度補償を行っている。A thermistor has a large negative temperature coefficient of resistance, and its resistance value decreases as the temperature rises within the operating temperature range. Utilizing this characteristic, for example, in communication equipment, temperature compensation of the oscillation frequency is performed.
プリント基板あるいはアルミナ基板などに表面実装され
る従来のサーミスタは、サーミスタ素体の両端に銀−パ
ラジウムを主成分とする電極が形成された構造をもつ。A conventional thermistor surface-mounted on a printed circuit board or an alumina substrate has a structure in which electrodes mainly composed of silver and palladium are formed at both ends of a thermistor element.
電極に銀−パラジウムを用いる理由は、プリント基板に
サーミスタをノ\ンダ付げする際に電極がハンダ中に溶
出して消失することを防止する、すなわちハンダ耐熱性
を得るためである。The reason why silver-palladium is used for the electrode is to prevent the electrode from being eluted into the solder and disappear when the thermistor is soldered to a printed circuit board, that is, to obtain solder heat resistance.
銀−パラジウム電極を形成するには、銀−パラジウム・
ペーストにサーミスタ素体の一部を浸漬するなどの方法
が用いられる。To form a silver-palladium electrode, silver-palladium.
A method such as immersing a part of the thermistor element in paste is used.
しかし従来のサーミスタは、ハンダ耐熱性が不十分であ
り、高温かつ長時間のハンダ付けはできないなど、ハン
ダ付は条件のうえで制約があった。However, conventional thermistors have insufficient soldering heat resistance and cannot be soldered for long periods of time at high temperatures, so there are restrictions on soldering.
ハンダ耐熱性を向上させるためには、パラジウム量を増
加させるとよい。しかし、パラジウム量が増加すると、
ハンダ付着性が低下し、サーミスタ電極へのハンダ付着
量が少なくなってしまう。In order to improve solder heat resistance, it is preferable to increase the amount of palladium. However, as the amount of palladium increases,
Solder adhesion deteriorates, and the amount of solder adhering to the thermistor electrode decreases.
このため、プリント基板へのサーミスタの固着力が弱く
なったり、サーミスタと回路上の配線との間の電気的接
続が不完全になるなどの問題が生じていた。This has led to problems such as weakening of the thermistor's adhesion to the printed circuit board and incomplete electrical connection between the thermistor and the wiring on the circuit.
ハンダ付着性およびハンダ耐熱性の双方を改善するには
、電極の表面に金属メッキを施す方法が考えられる。し
かし、メッキ処理時にサーミスタ素体が浸食されたり、
素体表面へのメッキ付着が発生する。また、電極とサー
ミスタ素体との界面や素体表面の一部が浸食され、耐湿
性などの信頼性が低下してしまう。A possible method for improving both solder adhesion and solder heat resistance is to apply metal plating to the surface of the electrode. However, the thermistor element may be eroded during the plating process, or
Plating adheres to the surface of the element. In addition, the interface between the electrode and the thermistor element and a part of the element surface are eroded, resulting in a decrease in reliability such as moisture resistance.
また、サーミスタ素体を銀−パラジウムに浸漬する方法
では、個々の素子に対する銀−パラジウムの付着量にバ
ラツキが生じ、電極の間隔にバラツキが生じてしまう。Further, in the method of immersing the thermistor body in silver-palladium, variations occur in the amount of silver-palladium deposited on each element, and variations occur in the spacing between electrodes.
この結果、サーミスタの抵抗値分布が広がり、製造ロフ
ト内および製造ロット間のバラツキが大きくなるなどの
問題があった。As a result, the resistance value distribution of the thermistor becomes wider, causing problems such as greater variation within the manufacturing loft and between manufacturing lots.
本発明は、以上の問題点を解決し、ハンダ付着性および
ハンダ耐熱性に優れ、かつ抵抗値のバラツキを減らすこ
とのできる構造のサーミスタを提供することを目的とす
る。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and provide a thermistor having a structure that has excellent solder adhesion and solder heat resistance, and can reduce variations in resistance value.
本発明のサーミスタは、電極がそれぞれ電気的に接触す
る部分を除いてサーミスタ素体の表面がガラス層で被覆
され、電極がメッキ層を含むことを特徴とする。The thermistor of the present invention is characterized in that the surface of the thermistor body is coated with a glass layer except for the portions where the electrodes make electrical contact with each other, and the electrodes include a plating layer.
サーミスタ素体の表面をガラス層で被覆したサーミスタ
としては、実開昭63−67201号公報に開示された
チップ型サーミスタが公知である。この公知技術は、サ
ーミスタ素体が露出していることによる使用中の特性劣
化を防止するためにガラス層を用いるものであり、メッ
キ処理については考慮されていない。As a thermistor in which the surface of the thermistor body is coated with a glass layer, a chip-type thermistor disclosed in Japanese Utility Model Application Publication No. 63-67201 is known. This known technique uses a glass layer in order to prevent characteristic deterioration during use due to the exposure of the thermistor body, and does not take plating treatment into consideration.
これに対して本発明は、電極表面にメッキを施すことに
よるハンダ付着性およびハンダ耐熱性の改善を目的とす
るものであり、これに付随する問題を解決するた杓にガ
ラス層を利用するものである。In contrast, the present invention aims to improve solder adhesion and solder heat resistance by plating the electrode surface, and uses a glass layer as a lever to solve the problems associated with this. It is.
本発明のサーミスタを製造するには、サーミスタ素体の
表面に、電極を形成しようとする部分を除いてガラスペ
ーストを塗布または印刷し、これを焼成してガラス層を
形成する。この後に、ガラス層で被覆されていない部分
に銀を主成分とする電極を形成し、その上にニッケル、
スズなどの金属メッキを施す。To manufacture the thermistor of the present invention, a glass paste is coated or printed on the surface of the thermistor body except for the areas where electrodes are to be formed, and this is fired to form a glass layer. After this, an electrode mainly composed of silver is formed on the part not covered with the glass layer, and nickel and
Plating with metal such as tin.
ガラス層の材料としては、軟化点が400〜1000℃
の範囲のもので、線熱膨張係数がサーミスタ素体に対し
て40〜100%のものが望ましく、特に50〜90%
のものが望ましい。The material for the glass layer has a softening point of 400 to 1000°C.
It is desirable that the coefficient of linear thermal expansion is 40 to 100%, particularly 50 to 90%, of the thermistor element.
Preferably.
軟化点の範囲は、実際には電極焼成温度との兼ね合いで
決定される。電極に焼付銀を用いるときの焼成温度は6
00〜850℃であり、その温度よりガラスの軟化点が
大幅に低い場合には、電極焼成時にガラスが電極表面に
浮き上がり、素子同士または素子と焼成治具との貼り付
きが生じて歩留りが低下することがある。望ましい軟化
点の範囲は、電極焼成温度の±50℃である。The range of the softening point is actually determined in consideration of the electrode firing temperature. The firing temperature when using baked silver for the electrode is 6
00 to 850°C, and if the softening point of the glass is significantly lower than that temperature, the glass will float to the electrode surface during electrode firing, causing the elements to stick to each other or the elements and the firing jig, resulting in a decrease in yield. There are things to do. A desirable softening point range is ±50° C. of the electrode firing temperature.
また、軟化点が1000℃より高いと、ガラス層を形成
するための温度が実質的に1000℃を越え、サーミス
タ素体が変質するなどの弊害が発生する。If the softening point is higher than 1000°C, the temperature for forming the glass layer will substantially exceed 1000°C, causing problems such as deterioration of the thermistor element.
サーミスタ素体の線熱膨張係数に対してガラスの線熱膨
張係数が40〜100%のときには、抗折強度がサーミ
スタ素体単独の場合に比較して増加する。特に50〜9
0%のときには、抗折強度が20〜70%増加する。こ
れに対して40−100%の範囲外では、ガラス層を設
けないものに比較して抗折強度が低下してしまう。When the linear thermal expansion coefficient of the glass is 40 to 100% of the linear thermal expansion coefficient of the thermistor element, the bending strength increases compared to the case of the thermistor element alone. Especially 50-9
When it is 0%, the bending strength increases by 20 to 70%. On the other hand, outside the range of 40-100%, the bending strength will be lower than that without the glass layer.
抗折強度とは、間隔を設けて配置された二つの台に素子
の両端を置き、素子の中央部に加重したときの破壊強度
をいう。これは、素子を表面実装基板に取り付けるとき
のハンダ等による熱や取り付は後の熱サイクルによって
生じる応力歪にどれだけ耐えることができるかの目安と
なる。The bending strength refers to the breaking strength when a load is applied to the center of the element with both ends of the element placed on two stands spaced apart. This is a measure of how well the device can withstand the heat caused by soldering or the like when attaching the device to the surface mounting board, and the stress and strain caused by subsequent thermal cycles.
抗折強度が増加するのは、素子表面のガラス層に圧縮応
力が残留するためと考えられる。すなわち、製造時に熱
膨張していたサーミスタ素体とガラス層とが冷えると、
熱膨張係数の大きなサーミスタ素体の方が縮み方が大き
く、ガラス層が圧縮された状態となる。この状態のサー
ミスタに折り曲げ力を加えると、折り曲げの内側には圧
縮応力が生じ、外側には引張応力が生じる。サーミスタ
素体のセラミック材料とガラス層とは、共に圧縮応力に
は強いが引張応力には弱く、ある程度以上の折り曲げ力
を加えるとその曲げの外側にクラックが生じる。このと
き、外側のガラス層に元から圧縮応力が加わっているた
め、ガラス層がない場合に比較して抗折強度が増加する
。The reason for the increase in bending strength is considered to be that compressive stress remains in the glass layer on the surface of the element. In other words, when the thermistor element and glass layer, which were thermally expanded during manufacturing, cool down,
A thermistor element having a larger coefficient of thermal expansion will shrink more, and the glass layer will be in a compressed state. When a bending force is applied to the thermistor in this state, compressive stress is generated on the inside of the bend, and tensile stress is generated on the outside. Both the ceramic material and the glass layer of the thermistor element are strong against compressive stress but weak against tensile stress, and if a bending force exceeding a certain level is applied, cracks will occur on the outside of the bend. At this time, since compressive stress is originally applied to the outer glass layer, the bending strength increases compared to the case where there is no glass layer.
具体的なガラス層の材料としては、耐メッキ性のS 1
02 、B203 、BaO系のものが好ましいが、こ
の他に、Ll、K、Na、Mg5Sr。As a specific material for the glass layer, plating-resistant S1
02, B203, and BaO-based ones are preferred, but in addition to these, Ll, K, Na, and Mg5Sr.
Zn、Cd、Pb、ARなどのイオンを含むものでも良
く、本発明はこれらの材料に限定されるものではない。The material may contain ions such as Zn, Cd, Pb, and AR, and the present invention is not limited to these materials.
サーミスタ素体の材料としては、マンガン、コバルト、
ニッケノペアルミニウム、銅がら選択される一以上の金
属の酸化物焼結体を利用できるが、本発明はこれらの材
料に限定されるものではない。Materials for the thermistor body include manganese, cobalt,
A sintered body of oxide of one or more metals selected from Nikkenope aluminum and copper can be used, but the present invention is not limited to these materials.
サーミスタ素体の形状としては、角柱状や円筒状のもの
が好ましいが、本発明はこれらの形状に限定されるもの
ではない。The thermistor body preferably has a prismatic or cylindrical shape, but the present invention is not limited to these shapes.
メッキ層を形成するには、サーミスタ素体にメッキ付着
性のよい導電層を形成し、その表面にさらにメッキ層を
形成する。導電層の材料としては、銀−パラジウム合金
に比較して電気伝導度が良く、耐熱に優れ、かつ低価格
の、銀を主成分とする銀ペーストの焼付電極を利用でき
る。しかし、これに限定されることなく、例えば銅やニ
ッケルなどを使用することもでき、溶射法により形成す
ることもできる。To form the plating layer, a conductive layer with good plating adhesion is formed on the thermistor body, and a plating layer is further formed on the surface of the conductive layer. As a material for the conductive layer, a baked electrode made of a silver paste containing silver as a main component can be used, which has better electrical conductivity than a silver-palladium alloy, has excellent heat resistance, and is inexpensive. However, without being limited thereto, for example, copper, nickel, etc. can also be used, and it can also be formed by a thermal spraying method.
電極が接触する部分を除いてサーミスタ素体をガラス層
で被覆することにより、メッキ時のサーミスタ素体部へ
の浸食、素体へのメッキ付着、および電極と素体との界
面の浸食を防止でき、電極表面のみをメッキ処理するこ
とが可能となる。電極表面をメッキ処理することにより
、ハンダ付着性およびハンダ耐熱性の双方を改善できる
。By covering the thermistor body with a glass layer except for the parts where the electrodes come into contact, it prevents erosion of the thermistor body during plating, plating adhesion to the body, and erosion of the interface between the electrode and the body. This makes it possible to plate only the electrode surface. By plating the electrode surface, both solder adhesion and solder heat resistance can be improved.
また、ガラス層が電極形成時のマスクとなるた杓、同一
構造の素子であれば電極付着面積が実質的に一定となり
、製造後の抵抗値のバラツキが少なくなる。特に熱膨張
係数を適切に選択すると、抵折強度を増加させることが
できる。Further, if the glass layer serves as a mask during electrode formation, and the elements have the same structure, the electrode adhesion area will be substantially constant, and variations in resistance value after manufacture will be reduced. In particular, if the coefficient of thermal expansion is selected appropriately, the bending strength can be increased.
第1図は本発明実施例のサーミスタの斜視図を示し、第
2図は長さ方向に沿った断面図を示す。FIG. 1 shows a perspective view of a thermistor according to an embodiment of the present invention, and FIG. 2 shows a cross-sectional view along the length direction.
ここでは、角柱状でその両端に電極が設けられた構造の
素子を例に説明する。Here, an element having a prismatic structure with electrodes provided at both ends will be explained as an example.
このサーミスタは、使用温度範囲内における温度上昇に
ともなって電気抵抗が低下するサーミスタ素体1と、こ
のサーミスタ素体1の表面に設けられた二つの電極とを
備える。ここで本実施例の特徴とするところは、二つの
電極がそれぞれ電気的に接触する部分を除いてサーミス
タ素体1の表面がガラス層4で被覆され、二つの電極が
それぞれ焼付電極2とメッキ層3と含むことにある。This thermistor includes a thermistor element 1 whose electrical resistance decreases as the temperature rises within the operating temperature range, and two electrodes provided on the surface of the thermistor element 1. Here, the feature of this embodiment is that the surface of the thermistor body 1 is covered with a glass layer 4 except for the parts where the two electrodes are in electrical contact with each other, and the two electrodes are plated with the baked electrode 2. Layer 3 is included.
具体的な実施例として、サーミスタ素体1の材料が異な
る二種類の素子を作製した。これらの実施例について以
下に説明する。As a specific example, two types of elements were manufactured in which the thermistor body 1 was made of different materials. These embodiments will be described below.
(実施例1) 第3図は実施例素子の製造方法を示す。(Example 1) FIG. 3 shows a method of manufacturing the example device.
まず、市販の酸化マンガンおよび酸化ニッケルを出発原
料として、MnO□ :N10のモル比を8;2とし、
この原料の重量に対してポリビニルブチラールを6重量
%、エタノールを30重量%、ブタノールを30重量%
加え、混合スラリーを作製した。このスラリーを用いて
、ドクターブレード法により厚さ0.39mmのシート
を作製し、このシートを70mm X 70mmの大き
さに打ち抜いた。次に、このシートを1200℃で4時
間焼成した。焼成により得られたシート31の寸法は、
縦a×横り×厚さCが50mm X 5Qmm X Q
、 55mmとなった(第3図(a))。First, using commercially available manganese oxide and nickel oxide as starting materials, the molar ratio of MnO□:N10 was set to 8:2,
Based on the weight of this raw material, polyvinyl butyral is 6% by weight, ethanol is 30% by weight, and butanol is 30% by weight.
In addition, a mixed slurry was prepared. Using this slurry, a sheet with a thickness of 0.39 mm was prepared by a doctor blade method, and this sheet was punched out to a size of 70 mm x 70 mm. Next, this sheet was fired at 1200° C. for 4 hours. The dimensions of the sheet 31 obtained by firing are as follows:
Length a x width x thickness C is 50mm x 5Qmm x Q
, 55 mm (Fig. 3(a)).
このシート310両面に、5102、B2O3およびB
aOを主成分とするガラスペーストを印刷し、850℃
で焼成し、厚さd=20±10μ山のガラス層32を形
成したく第3図ら〕)。次に、これを幅e−1,20m
mの短冊状に切り出しく第3図(C))、その切断面に
、前述のガラス層形成方法により厚さf=20±10μ
sのガラス層33を形成した(第3図(d))。5102, B2O3 and B on both sides of this sheet 310.
Print glass paste containing aO as the main component and heat at 850°C.
(Fig. 3 et al.) to form a glass layer 32 having a thickness d=20±10 μm). Next, make this width e-1, 20m
Figure 3 (C)) is cut out into a rectangular shape of m, and the cut surface is coated with a thickness f = 20 ± 10μ by the above-mentioned glass layer forming method.
A glass layer 33 of s was formed (FIG. 3(d)).
さらに、前述の切り出しにより得られた切断面と垂直な
方向で、長さg = 1.90mmのチップ状に切断し
た(第3図(e))。Furthermore, it was cut into chips with a length g = 1.90 mm in a direction perpendicular to the cut surface obtained by the above-mentioned cutting (FIG. 3(e)).
この切断面およびその周囲のガラス層32.33に電極
34として銀ペーストを塗布し、800 ℃で焼き付け
た(第3図(f))。この段階における素子の寸法は、
長さβ−約2.0mm、幅W−約1.25mm、厚さh
=約0.75mmであった。Silver paste was applied as an electrode 34 to this cut surface and the surrounding glass layers 32, 33, and baked at 800° C. (FIG. 3(f)). The dimensions of the element at this stage are:
Length β - about 2.0 mm, width W - about 1.25 mm, thickness h
= approximately 0.75 mm.
次に、この素子に電解メッキ法によりメッキ処理を施し
、電極34の表面に厚さ2〜3μmのニッケル層と、厚
さ4〜5μmのスズ層とを積層し、二重構造の電極表面
層を形成した。Next, this element is plated using an electrolytic plating method, and a nickel layer with a thickness of 2 to 3 μm and a tin layer with a thickness of 4 to 5 μm are laminated on the surface of the electrode 34, and a double-structured electrode surface layer is formed. was formed.
第4図は以上の工程で得られたサーミスタの電極の部分
の断面顕微鏡写真を示す。FIG. 4 shows a cross-sectional micrograph of the electrode portion of the thermistor obtained through the above steps.
比較のため、サーミスタ素体をガラス層で被膜していな
い素子について、同様のメッキ処理を行った。このとき
の電極部分の断面顕微鏡写真を第5図および第6図に示
す。For comparison, a similar plating process was performed on an element whose thermistor body was not coated with a glass layer. Cross-sectional micrographs of the electrode portion at this time are shown in FIGS. 5 and 6.
第5図に示した例では、サーミスタ素体がメッキ処理に
より浸食されている。また、第6図に示した例では、電
極を形成しようとした部分以外の素体表面にもメッキが
付着している。In the example shown in FIG. 5, the thermistor element body has been eroded by the plating process. Furthermore, in the example shown in FIG. 6, plating is also attached to the surface of the element other than the portion where the electrode is intended to be formed.
これに対して第4図に示したサーミスタでは、素体が浸
食されることはない。また、電極はガラス層の表面にも
付着しているが、この部分は素体とは絶縁されており、
素子の抵抗値に影響することはない。すなわち、素体の
端面だけに電極が設けられたと同等である。On the other hand, in the thermistor shown in FIG. 4, the element body is not eroded. The electrode is also attached to the surface of the glass layer, but this part is insulated from the element body.
It does not affect the resistance value of the element. In other words, it is equivalent to providing electrodes only on the end faces of the element body.
次に、上述の製造方法で得られたサーミスタについて、
ハンダ付着性およびハンダ耐熱性について試験を行った
。また、比較例として、サーミスタ素体に銀−パラジウ
ム電極を850℃で焼き付けたものについても試験を行
った。ノ\ンダ付着性については、230℃のハンダ浴
に4秒間浸漬し、そのハンダ付着面積を観察した。その
結果を第1表に示す。ハンダ耐熱性については、350
℃のハンダ浴に30秒間浸漬し、電極の消失状態を観察
した。Next, regarding the thermistor obtained by the above manufacturing method,
Tests were conducted for solder adhesion and solder heat resistance. As a comparative example, a thermistor body with a silver-palladium electrode baked at 850°C was also tested. Regarding solder adhesion, the sample was immersed in a solder bath at 230° C. for 4 seconds, and the solder adhesion area was observed. The results are shown in Table 1. Regarding solder heat resistance, 350
The electrode was immersed in a solder bath for 30 seconds, and the state of disappearance of the electrode was observed.
その結果を第2表に示す。The results are shown in Table 2.
(以下本頁余白)
第1表
ハンダ付着性試験の結果
第2表
ハンダ耐熱性試験の結果
二のように、実施例1で得られたサーミスタは、ハンダ
付着性およびハンダ耐熱性が非常に優れていた。(Hereinafter, the margin of this page) Table 1 Results of solder adhesion test Table 2 Results of solder heat resistance test As shown in 2, the thermistor obtained in Example 1 has very excellent solder adhesion and solder heat resistance. was.
また、同じ製造方法で10ット300個、40ツトのサ
ーミスタを製造し、25℃における各ロフトの平均抵抗
値およびバラツキを測定した。比較例についても40ツ
ト製造し、同様に平均抵抗値およびバラツキを測定した
。この結果を第3表に示す。ロフト番号1〜4は実施例
であり、ロフト番号5〜8は比較例を示す。Further, 300 and 40 thermistors of 10 t were manufactured using the same manufacturing method, and the average resistance value and variation of each loft at 25° C. were measured. Forty pieces of Comparative Example were also manufactured, and the average resistance value and variation were similarly measured. The results are shown in Table 3. Loft numbers 1 to 4 are examples, and loft numbers 5 to 8 are comparative examples.
第3表 製造ロフトの平均抵抗値とバラツキこのように
、ロット内の抵抗値のバラツキが小さく、ロフト間の平
均値のバラツキも小さかった。Table 3: Average resistance value and variation of manufacturing lofts As can be seen, the variation in resistance value within a lot was small, and the variation in average value between lofts was also small.
(実施例2)
実施例1における出発原料を酸化マンガン、酸化ニッケ
ルおよび酸化コバルトに替え、MnO2:N10:CO
Oのモル比を3:1:2として、実施例1と同様の方法
によりサーミスタを作製した。このサーミスタをプリン
ト基板にハンダ付けし、85℃、85RH%、1000
時間の混生放置における25℃の抵抗値の経時変化を測
定した。また、比較例として、サーミスタ素体に銀−パ
ラジウム電極を焼き付けたもの、およびそれにメッキ処
理を施したものについても同じ測定を行った。この結果
を第4表に示す。この表において、ロフト番号1.2は
実施例により得られたもの、ロット番号3.4はメッキ
処理を施していない比較例、ロフト番号5.6はメッキ
処理を施した比較例をそれぞれ示す。各ロフトの素子数
は300個である。(Example 2) The starting materials in Example 1 were replaced with manganese oxide, nickel oxide and cobalt oxide, and MnO2:N10:CO
A thermistor was produced in the same manner as in Example 1 except that the molar ratio of O was 3:1:2. Solder this thermistor to the printed circuit board, 85℃, 85RH%, 1000℃.
The time-dependent change in resistance value at 25° C. was measured while the sample was left in the mixed state for some time. Furthermore, as comparative examples, the same measurements were performed on a thermistor body with a silver-palladium electrode baked on it and a thermistor body with a plating treatment applied thereto. The results are shown in Table 4. In this table, loft number 1.2 indicates the sample obtained in the example, lot number 3.4 indicates a comparative example without plating, and loft number 5.6 indicates a comparative example with plating. The number of elements in each loft is 300.
第4表 耐湿性1000時間の抵抗値経時変化(%)表
から明らかなように、従来技術で製造されメッキ処理が
施された比較例は、経時変化が大きく、メッキ処理によ
り耐湿性が低下していることを示す。これに対して実施
例の素子は、メッキ処理を施しても、従来技術により製
造されたメッキ処理を施していない素子と同等、もしく
はそれ以上に経時変化が小さく、信頼性に優れている。Table 4 Resistance change over time (%) after 1000 hours of moisture resistance As is clear from the table, the comparative example manufactured using the conventional technology and subjected to plating showed a large change over time, and the plating treatment caused a decrease in moisture resistance. Indicates that On the other hand, even if the element of the example is subjected to plating treatment, the change over time is as small as, or even greater than, an element manufactured by the prior art that is not subjected to plating treatment, and the element is excellent in reliability.
(実施例3)
ガラス層の熱膨張係数によるサーミスタの抗折強度を測
定するため、サーミスタ素体としてMn、Co、N1、
Cu、AI!等の酸化物を混合して焼成した種々の線熱
膨張係数のものを用い、ガラス層としても種々の材料を
用いて、電極を形成する前の状態で長さ!=約2.Qm
m、幅W=約1.251T1mのサーミスタを形成した
。また、ガラス層を設けないサーミスタも作った。これ
らのサーミスタの長さ方向の両端を間隔1.2mmで配
置された二つの台にそれぞれ載置し、二つの台の中間の
位置に押し下げ速度20mm/rninで力を加え、破
壊時に加えられた加重を測定した。(Example 3) In order to measure the bending strength of the thermistor based on the thermal expansion coefficient of the glass layer, Mn, Co, N1,
Cu, AI! Using various linear thermal expansion coefficients made by mixing and firing oxides such as, etc., and using various materials as the glass layer, the length before forming the electrodes! = about 2. Qm
A thermistor with a width W of approximately 1.251T1m was formed. We also created a thermistor without a glass layer. Both ends of these thermistors in the length direction were placed on two tables placed at a distance of 1.2 mm, and a downward force was applied at a downward speed of 20 mm/rnin to a position midway between the two tables. The weight was measured.
二の結果を第5表と第7図に示す。これらに示した値は
、同じ線熱膨張係数の組み合わせに対してそれぞれ20
個の平均値を測定し、ガラス層がない場合の抗折強度f
:I−,li:Lと、ガラス層がある場合の抗折強度f
fj9a:、−hとの比を百分率で表したものである。The results of the second test are shown in Table 5 and Figure 7. The values shown are 20% for the same combination of linear thermal expansion coefficients.
The bending strength f when there is no glass layer is measured.
:I-, li:L and bending strength f when there is a glass layer
The ratio with fj9a:, -h is expressed as a percentage.
第5表 (fヵう;t+−、/ f+−IL) X10
0の値第7図は横軸に線熱膨張係数の比をとり、縦軸に
抗折強度の比を示す。線熱膨張係数α力つ、がサーミス
タ素体の40〜100%の材料を用いた場合には、ガラ
ス層がない場合に比較して抵折強度が増加した。特に、
50〜90%の場合には、強度が20〜70%増加した
。これに対して線熱膨張係数α力う。Table 5 (fkau; t+-, / f+-IL) X10
Value of 0 In FIG. 7, the horizontal axis shows the ratio of linear thermal expansion coefficients, and the vertical axis shows the ratio of bending strength. When a material having a linear thermal expansion coefficient α of 40 to 100% of that of the thermistor body was used, the refraction strength increased compared to the case without a glass layer. especially,
In the case of 50-90%, the strength increased by 20-70%. On the other hand, the coefficient of linear thermal expansion is α.
が上述の範囲外のときには、ガラス層がない場合に比較
して抗折強度が低下してしまった。When it was out of the above-mentioned range, the bending strength was lower than when there was no glass layer.
以上説明したように、本発明のサーミスタは、第一に、
メッキ電極を用いているので、ハンダ付着性とハンダ耐
熱性との双方を向上させることができる効果がある。As explained above, the thermistor of the present invention has, firstly,
Since plated electrodes are used, both solder adhesion and solder heat resistance can be improved.
第二に、抵抗値を決定するサーミスタ素体と接する電極
の面積があらかじt設定されいるた約、目標抵抗値の再
現性がよく、そのバラツキが少ない。すなわち、製品の
歩留りを向上させることができる効果がある。Second, since the area of the electrode in contact with the thermistor body that determines the resistance value is preset, the reproducibility of the target resistance value is good and there is little variation. That is, there is an effect that the yield of products can be improved.
第三に、メッキ電極の下地の材料として銀−パラジウム
より安価な銀や銅その他を使用でき、低コストのサーミ
スタを製造できる効果がある。Third, it is possible to use silver, copper, or the like, which is cheaper than silver-palladium, as the underlying material for the plating electrode, which has the effect of making it possible to manufacture a low-cost thermistor.
第四に、ガラス層の熱膨張係数を適切に選択することに
より、サーミスタの抗折強度が増加する効果がある。Fourthly, by appropriately selecting the coefficient of thermal expansion of the glass layer, the flexural strength of the thermistor can be increased.
第1図は本発明実施例サーミスタの斜視図。
第2図は断面図。
第3図は製造方法を示す図。
第4図は実施例の電極部分の断面結晶構造を示す顕微鏡
写真。
第5図はガラス層を設けない場合のメッキ処理後の電極
部分の断面結晶構造を示す顕微鏡写真。
第6図はガラス層を設けない場合のメッキ処理後の電極
部分の断面結晶構造を示す顕微鏡写真。
第7図は線熱膨張係数の比に対する抗折強度比の変化を
示す図。
1・・・サーミスタ素体、2・・・焼付電極、3・・・
メッキ層、4.32.33、・・・ガラス層、31・・
・シート、34・・・電極。
蔓
圓
薫
ン
圓
(Q)
(b)
(C)
第
ア
((1)
(e)
4
(f)
尼6
αサーミスタ
o =75 xlO−7/”C
Δ=76
0:83
■=85
・=95FIG. 1 is a perspective view of a thermistor according to an embodiment of the present invention. Figure 2 is a sectional view. FIG. 3 is a diagram showing the manufacturing method. FIG. 4 is a micrograph showing the cross-sectional crystal structure of the electrode portion of the example. FIG. 5 is a micrograph showing the cross-sectional crystal structure of the electrode portion after plating without a glass layer. FIG. 6 is a micrograph showing the cross-sectional crystal structure of the electrode portion after plating without a glass layer. FIG. 7 is a diagram showing changes in the transverse strength ratio with respect to the ratio of linear thermal expansion coefficients. 1... Thermistor element body, 2... Baked electrode, 3...
Plating layer, 4.32.33...Glass layer, 31...
- Sheet, 34...electrode. Tsunen Kununen (Q) (b) (C) Part A ((1) (e) 4 (f) 6 α thermistor o = 75 xlO-7/”C Δ=76 0:83 ■=85 ・=95
Claims (2)
抵抗が低下するサーミスタ素体と、このサーミスタ素体
の表面に設けられた二つの電極とを備えたサーミスタに
おいて、上記二つの電極がそれぞれ電気的に接触する部
分を除いて上記サーミスタ素体の表面がガラス層で被覆
され、上記二つの電極はメッキ層を含むことを特徴とす
るサーミスタ。1. In a thermistor comprising a thermistor element whose electrical resistance decreases as the temperature rises within the operating temperature range, and two electrodes provided on the surface of this thermistor element, the two electrodes are in electrical contact with each other. A thermistor characterized in that the surface of the thermistor body except for the parts covered with a glass layer is coated with a glass layer, and the two electrodes include a plating layer.
、線熱膨張係数がサーミスタ素体の線熱膨張係数の40
%以上100%以下の値のガラス材料で形成された請求
項1記載のサーミスタ。2. The glass layer has a softening point of 400°C or more and 1000°C or less, and a linear thermal expansion coefficient of 40% the linear thermal expansion coefficient of the thermistor element.
The thermistor according to claim 1, wherein the thermistor is made of a glass material having a value of % or more and 100% or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343661A JP2591205B2 (en) | 1989-12-28 | 1989-12-28 | Thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343661A JP2591205B2 (en) | 1989-12-28 | 1989-12-28 | Thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03250603A true JPH03250603A (en) | 1991-11-08 |
| JP2591205B2 JP2591205B2 (en) | 1997-03-19 |
Family
ID=18363263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1343661A Expired - Lifetime JP2591205B2 (en) | 1989-12-28 | 1989-12-28 | Thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2591205B2 (en) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04218765A (en) * | 1990-03-26 | 1992-08-10 | Toshiba Corp | Ultrasonic probe |
| JPH0538802U (en) * | 1991-10-25 | 1993-05-25 | テイーデイーケイ株式会社 | Chip thermistor |
| JPH05166604A (en) * | 1991-12-13 | 1993-07-02 | Murata Mfg Co Ltd | Method of manufacturing chip type positive characteristic thermistor |
| JPH05308003A (en) * | 1992-03-30 | 1993-11-19 | Taiyo Yuden Co Ltd | Method of manufacturing chip type thermistor |
| JPH06215908A (en) * | 1992-11-30 | 1994-08-05 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JPH06231906A (en) * | 1993-01-28 | 1994-08-19 | Mitsubishi Materials Corp | Thermistor |
| JPH07161503A (en) * | 1993-12-02 | 1995-06-23 | Komatsu Ltd | Chip type thermistor |
| JPH0917609A (en) * | 1995-06-28 | 1997-01-17 | Mitsubishi Materials Corp | Multilayer chip thermistor |
| JPH0982504A (en) * | 1995-09-11 | 1997-03-28 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JPH10106809A (en) * | 1996-10-02 | 1998-04-24 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JP2000124007A (en) * | 1998-10-13 | 2000-04-28 | Murata Mfg Co Ltd | Chip thermistor and method of producing the same |
| JP2001167907A (en) * | 1992-11-30 | 2001-06-22 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JP2002141206A (en) * | 2001-09-17 | 2002-05-17 | Mitsubishi Materials Corp | Stacked chip thermistor |
| US6545857B2 (en) | 2000-07-21 | 2003-04-08 | Murata Manufacturing Co. Ltd. | Chip-type electronic component and manufacturing method therefor |
| JP2004128084A (en) * | 2002-09-30 | 2004-04-22 | Mitsubishi Materials Corp | Flake type thermistor and method of manufacturing the same |
| JP2011204778A (en) * | 2010-03-24 | 2011-10-13 | Murata Mfg Co Ltd | Method of manufacturing laminated ceramic electronic component |
| JP2017059815A (en) * | 2015-09-15 | 2017-03-23 | Tdk株式会社 | Laminate electronic component |
| KR20210040980A (en) | 2018-08-23 | 2021-04-14 | 미쓰비시 마테리알 가부시키가이샤 | Thermistor, and method of manufacturing the thermistor |
| JP2022170162A (en) * | 2021-04-28 | 2022-11-10 | Tdk株式会社 | electronic components |
| US11763967B2 (en) | 2019-02-22 | 2023-09-19 | Mitsubishi Materials Corporation | Method of manufacturing thermistor |
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| JPS60701A (en) * | 1983-06-16 | 1985-01-05 | ティーディーケイ株式会社 | Ormic electrode |
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| JPH01235304A (en) * | 1988-03-16 | 1989-09-20 | Matsushita Electric Ind Co Ltd | Manufacture of glass-sealed thermistor |
-
1989
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60701A (en) * | 1983-06-16 | 1985-01-05 | ティーディーケイ株式会社 | Ormic electrode |
| JPS6367202U (en) * | 1986-10-22 | 1988-05-06 | ||
| JPS6367201U (en) * | 1986-10-22 | 1988-05-06 | ||
| JPH01235304A (en) * | 1988-03-16 | 1989-09-20 | Matsushita Electric Ind Co Ltd | Manufacture of glass-sealed thermistor |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04218765A (en) * | 1990-03-26 | 1992-08-10 | Toshiba Corp | Ultrasonic probe |
| JPH0538802U (en) * | 1991-10-25 | 1993-05-25 | テイーデイーケイ株式会社 | Chip thermistor |
| JPH05166604A (en) * | 1991-12-13 | 1993-07-02 | Murata Mfg Co Ltd | Method of manufacturing chip type positive characteristic thermistor |
| JPH05308003A (en) * | 1992-03-30 | 1993-11-19 | Taiyo Yuden Co Ltd | Method of manufacturing chip type thermistor |
| JP2001167907A (en) * | 1992-11-30 | 2001-06-22 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JPH06215908A (en) * | 1992-11-30 | 1994-08-05 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JPH06231906A (en) * | 1993-01-28 | 1994-08-19 | Mitsubishi Materials Corp | Thermistor |
| JPH07161503A (en) * | 1993-12-02 | 1995-06-23 | Komatsu Ltd | Chip type thermistor |
| JPH0917609A (en) * | 1995-06-28 | 1997-01-17 | Mitsubishi Materials Corp | Multilayer chip thermistor |
| JPH0982504A (en) * | 1995-09-11 | 1997-03-28 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JPH10106809A (en) * | 1996-10-02 | 1998-04-24 | Mitsubishi Materials Corp | Chip type thermistor and manufacturing method thereof |
| JP2000124007A (en) * | 1998-10-13 | 2000-04-28 | Murata Mfg Co Ltd | Chip thermistor and method of producing the same |
| US6588094B2 (en) | 1998-10-13 | 2003-07-08 | Murata Manufacturing Co., Ltd. | Method of producing thermistor chips |
| DE10135319B4 (en) * | 2000-07-21 | 2007-10-31 | Murata Mfg. Co., Ltd., Nagaokakyo | Electrical component and method for its production |
| US6545857B2 (en) | 2000-07-21 | 2003-04-08 | Murata Manufacturing Co. Ltd. | Chip-type electronic component and manufacturing method therefor |
| JP2002141206A (en) * | 2001-09-17 | 2002-05-17 | Mitsubishi Materials Corp | Stacked chip thermistor |
| JP2004128084A (en) * | 2002-09-30 | 2004-04-22 | Mitsubishi Materials Corp | Flake type thermistor and method of manufacturing the same |
| JP2011204778A (en) * | 2010-03-24 | 2011-10-13 | Murata Mfg Co Ltd | Method of manufacturing laminated ceramic electronic component |
| JP2017059815A (en) * | 2015-09-15 | 2017-03-23 | Tdk株式会社 | Laminate electronic component |
| KR20210040980A (en) | 2018-08-23 | 2021-04-14 | 미쓰비시 마테리알 가부시키가이샤 | Thermistor, and method of manufacturing the thermistor |
| KR20210046669A (en) | 2018-08-23 | 2021-04-28 | 미쓰비시 마테리알 가부시키가이샤 | Thermistor with protective film and its manufacturing method |
| US11594350B2 (en) | 2018-08-23 | 2023-02-28 | Mitsubishi Materials Corporation | Thermistor and method for manufacturing thermistor |
| US11600410B2 (en) | 2018-08-23 | 2023-03-07 | Mitsubishi Materials Corporation | Thermistor with protective film and manufacturing method thereof |
| US11763967B2 (en) | 2019-02-22 | 2023-09-19 | Mitsubishi Materials Corporation | Method of manufacturing thermistor |
| JP2022170162A (en) * | 2021-04-28 | 2022-11-10 | Tdk株式会社 | electronic components |
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