JPH0339832U - - Google Patents
Info
- Publication number
- JPH0339832U JPH0339832U JP10086889U JP10086889U JPH0339832U JP H0339832 U JPH0339832 U JP H0339832U JP 10086889 U JP10086889 U JP 10086889U JP 10086889 U JP10086889 U JP 10086889U JP H0339832 U JPH0339832 U JP H0339832U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction chamber
- flow rate
- raw material
- setting unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002994 raw material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
Description
第１図は本考案装置の壱実施例の構成説明図、
第２図は本考案の膜生成シーケンスと原料ガスの
流れを示す説明図、第３図は従来装置の一例の構
成説明図、第４図は従来の膜生成シーケンスと原
料ガスの流れを示す説明図、第５図ａ，ｂはそれ
ぞれ従来の原料ガス濃度分布と本考案の原料ガス
濃度分布の説明図である。
１…反応室、２…ウエーハ、３…ウエーハボー
ト、５…ガス導入ポート、６…マスフローコント
ローラ、９…パルス状流量設定ユニツト、９ａ…
ガス流量設定ユニツト。
FIG. 1 is an explanatory diagram of the configuration of the first embodiment of the device of the present invention;
Fig. 2 is an explanatory diagram showing the film production sequence of the present invention and the flow of raw material gas, Fig. 3 is an explanatory diagram of the configuration of an example of a conventional device, and Fig. 4 is an explanatory diagram showing the conventional film production sequence and flow of raw material gas. 5A and 5B are explanatory views of the conventional source gas concentration distribution and the source gas concentration distribution of the present invention, respectively. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 2... Wafer, 3... Wafer boat, 5... Gas introduction port, 6... Mass flow controller, 9... Pulse flow rate setting unit, 9a...
Gas flow rate setting unit.
Claims (1)
ハボート３を設置し、原料ガスをガス流量設定ユ
ニツト９ａに基づき、マスフローコントローラ６
を制御してガス導入ポート５より反応室１内に導
入しつつ排気口４より排気しウエーハ２にＣＶＤ
膜を生成する減圧ＣＶＤ膜生成装置において、ガ
ス流量設定ユニツト９ａに代えて反応室１内に原
料ガスをパルス状に流し、かつそのパルス幅を変
更できるパルス状流量設定ユニツト９を設定し、
このユニツト９にはパルス状に流す原料ガスの流
量を制御し反応室１から５００mm以内に設置され
たマスフローコントローラ６を連結してなる減圧
ＣＶＤ膜生成装置。 A wafer boat 3 with charged wafers 2 is installed in the reaction chamber 1, and the raw material gas is supplied to the mass flow controller 6 based on the gas flow rate setting unit 9a.
The CVD gas is introduced into the reaction chamber 1 through the gas introduction port 5 and exhausted through the exhaust port 4, thereby applying CVD to the wafer 2.
In the low-pressure CVD film production apparatus for producing a film, a pulsed flow rate setting unit 9 is set in place of the gas flow rate setting unit 9a, which allows the raw material gas to flow into the reaction chamber 1 in a pulsed manner and is capable of changing the pulse width.
This unit 9 is a low-pressure CVD film production apparatus in which a mass flow controller 6 is connected to the unit 9 and is installed within 500 mm from the reaction chamber 1 to control the flow rate of the raw material gas flowing in a pulsed manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10086889U JPH0339832U (en) | 1989-08-28 | 1989-08-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10086889U JPH0339832U (en) | 1989-08-28 | 1989-08-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0339832U true JPH0339832U (en) | 1991-04-17 |
Family
ID=31649851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10086889U Pending JPH0339832U (en) | 1989-08-28 | 1989-08-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0339832U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (en) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | Vacuum cvd apparatus |
| JPS60211914A (en) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | Cvd apparatus |
| JPS61251119A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Chemical vapor deposition method |
| JPH01195277A (en) * | 1988-01-28 | 1989-08-07 | Fujitsu Ltd | Formation of thin film |
-
1989
- 1989-08-28 JP JP10086889U patent/JPH0339832U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898138A (en) * | 1981-12-07 | 1983-06-10 | Hitachi Metals Ltd | Vacuum cvd apparatus |
| JPS60211914A (en) * | 1984-04-06 | 1985-10-24 | Hitachi Ltd | Cvd apparatus |
| JPS61251119A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Chemical vapor deposition method |
| JPH01195277A (en) * | 1988-01-28 | 1989-08-07 | Fujitsu Ltd | Formation of thin film |
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