JPH0345668U - - Google Patents

Info

Publication number
JPH0345668U
JPH0345668U JP10691889U JP10691889U JPH0345668U JP H0345668 U JPH0345668 U JP H0345668U JP 10691889 U JP10691889 U JP 10691889U JP 10691889 U JP10691889 U JP 10691889U JP H0345668 U JPH0345668 U JP H0345668U
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
resin
sealed semiconductor
mount lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10691889U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10691889U priority Critical patent/JPH0345668U/ja
Publication of JPH0345668U publication Critical patent/JPH0345668U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ａ，ｂは本考案の一実施例を示す断面図
及びＡ部の拡大断面図、第２図ａ，ｂは従来の樹
脂封止型半導体発光装置の一例を示す断面図及び
Ｂ部の拡大断面図である。 １……マウントリード、２，２Ａ……発光素子
、３……銀ペースト、４……リード、５……ボン
デング線、６……エポキシ樹脂、１１……マウン
ト面、２１……ｐ−ｎ接合部、２２……ステツプ
状溝部、２３，２３Ａ……裏面電極。 Figures 1a and b are a cross-sectional view showing an embodiment of the present invention and an enlarged cross-sectional view of part A, and Figures 2a and b are a cross-sectional view and part B showing an example of a conventional resin-sealed semiconductor light-emitting device. FIG. DESCRIPTION OF SYMBOLS 1... Mount lead, 2, 2A... Light emitting element, 3... Silver paste, 4... Lead, 5... Bonding wire, 6... Epoxy resin, 11... Mount surface, 21... p-n junction Part, 22... Step-shaped groove part, 23, 23A... Back electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] マウントリードと、このマウントリードの素子
マウント面に導電性接着剤により裏面電極が固着
された発光素子とを有する樹脂封止型半導体発光
装置において、前記発光素子の裏面の周辺部には
ステツプ状の溝部が形成されていることを特徴と
する樹脂封止型半導体発光装置。 In a resin-sealed semiconductor light emitting device having a mount lead and a light emitting element having a back electrode fixed to the element mounting surface of the mount lead with a conductive adhesive, a step-shaped light emitting device is provided on the periphery of the back surface of the light emitting element. A resin-sealed semiconductor light-emitting device characterized in that a groove is formed.
JP10691889U 1989-09-11 1989-09-11 Pending JPH0345668U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10691889U JPH0345668U (en) 1989-09-11 1989-09-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10691889U JPH0345668U (en) 1989-09-11 1989-09-11

Publications (1)

Publication Number Publication Date
JPH0345668U true JPH0345668U (en) 1991-04-26

Family

ID=31655638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10691889U Pending JPH0345668U (en) 1989-09-11 1989-09-11

Country Status (1)

Country Link
JP (1) JPH0345668U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014013855A (en) * 2012-07-05 2014-01-23 Mitsubishi Electric Corp Method of manufacturing semiconductor light-emitting device and semiconductor light-emitting device
WO2014185010A1 (en) * 2013-05-13 2014-11-20 パナソニックＩｐマネジメント株式会社 Semiconductor element, semiconductor element manufacturing method, semiconductor module, semiconductor module manufacturing method, and semiconductor package
JP2022180123A (en) * 2021-05-24 2022-12-06 日亜化学工業株式会社 Light-emitting device and method for manufacturing light-emitting device
CN116031227A (en) * 2021-10-27 2023-04-28 三菱电机株式会社 Semiconductor device and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014013855A (en) * 2012-07-05 2014-01-23 Mitsubishi Electric Corp Method of manufacturing semiconductor light-emitting device and semiconductor light-emitting device
WO2014185010A1 (en) * 2013-05-13 2014-11-20 パナソニックＩｐマネジメント株式会社 Semiconductor element, semiconductor element manufacturing method, semiconductor module, semiconductor module manufacturing method, and semiconductor package
US9362366B2 (en) 2013-05-13 2016-06-07 Panasonic Intellectual Property Management Co., Ltd. Semiconductor element, semiconductor element manufacturing method, semiconductor module, semiconductor module manufacturing method, and semiconductor package
JP5942212B2 (en) * 2013-05-13 2016-06-29 パナソニックＩｐマネジメント株式会社 Semiconductor device and manufacturing method thereof, semiconductor module and manufacturing method thereof, and semiconductor package
JP2022180123A (en) * 2021-05-24 2022-12-06 日亜化学工業株式会社 Light-emitting device and method for manufacturing light-emitting device
JP2024055970A (en) * 2021-05-24 2024-04-19 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
CN116031227A (en) * 2021-10-27 2023-04-28 三菱电机株式会社 Semiconductor device and manufacturing method thereof
JP2023065215A (en) * 2021-10-27 2023-05-12 三菱電機株式会社 Semiconductor device and its manufacturing method

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