JPH0351113B2 - - Google Patents

Info

Publication number: JPH0351113B2
Authority: JP; Japan
Prior art keywords: trench; groove; forming; insulating film; semiconductor
Prior art date: 1984-07-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP59143230A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6123360A (ja

Inventor

Kenji Miura

Ban Nakajima

Kazushige Minegishi

Takashi Morie

Satofumi Somatani

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NTT Inc

Original Assignee

Nippon Telegraph and Telephone Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-07-12

Filing date

1984-07-12

Publication date

1991-08-05

1984-07-12 Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp

1984-07-12 Priority to JP59143230A priority Critical patent/JPS6123360A/ja

1985-07-09 Priority to US06/753,283 priority patent/US4672410A/en

1985-07-12 Priority to KR1019850004990A priority patent/KR900000207B1/ko

1985-07-12 Priority to DE19853525418 priority patent/DE3525418A1/de

1986-01-31 Publication of JPS6123360A publication Critical patent/JPS6123360A/ja

1991-08-05 Publication of JPH0351113B2 publication Critical patent/JPH0351113B2/ja

Status Granted legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

Semiconductor Integrated Circuits (AREA)
Semiconductor Memories (AREA)

JP59143230A 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法 Granted JPS6123360A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP59143230A JPS6123360A (ja)	1984-07-12	1984-07-12	半導体記憶装置およびその製造方法
US06/753,283 US4672410A (en)	1984-07-12	1985-07-09	Semiconductor memory device with trench surrounding each memory cell
KR1019850004990A KR900000207B1 (ko)	1984-07-12	1985-07-12	반도체 기억장치와 그 제조방법
DE19853525418 DE3525418A1 (de)	1984-07-12	1985-07-12	Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59143230A JPS6123360A (ja)	1984-07-12	1984-07-12	半導体記憶装置およびその製造方法

Publications (2)

Publication Number	Publication Date
JPS6123360A JPS6123360A (ja)	1986-01-31
JPH0351113B2 true JPH0351113B2 (de)	1991-08-05

Family

ID=15333925

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP59143230A Granted JPS6123360A (ja)	1984-07-12	1984-07-12	半導体記憶装置およびその製造方法

Country Status (1)

Country	Link
JP (1)	JPS6123360A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4651184A (en) *	1984-08-31	1987-03-17	Texas Instruments Incorporated	Dram cell and array
JPS6258657A (ja) *	1985-09-06	1987-03-14	Matsushita Electric Ind Co Ltd	半導体装置の製造方法
JP2674744B2 (ja) *	1986-06-10	1997-11-12	ソニー株式会社	半導体メモリ装置の製造方法
JP2512902B2 (ja) *	1986-07-28	1996-07-03	日本電気株式会社	半導体記憶装置の製造方法
JP2521928B2 (ja) *	1986-11-13	1996-08-07	三菱電機株式会社	半導体記憶装置
JPS63115367A (ja) *	1986-11-04	1988-05-19	Matsushita Electronics Corp	半導体装置の製造方法
JPH0744274B2 (ja) *	1986-12-08	1995-05-15	株式会社東芝	半導体装置及びその製造方法
JPH0748525B2 (ja) *	1987-03-24	1995-05-24	沖電気工業株式会社	半導体メモリ装置の製造方法
JP2012054334A (ja) *	2010-08-31	2012-03-15	Elpida Memory Inc	半導体デバイス及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5636164U (de) *	1979-08-27	1981-04-07
JPS5919366A (ja) *	1982-07-23	1984-01-31	Hitachi Ltd	半導体記憶装置
JPS6122665A (ja) *	1984-07-11	1986-01-31	Hitachi Ltd	半導体集積回路装置

1984
- 1984-07-12 JP JP59143230A patent/JPS6123360A/ja active Granted

Also Published As

Publication number	Publication date
JPS6123360A (ja)	1986-01-31

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