JPS6123360A - 半導体記憶装置およびその製造方法 - Google Patents

半導体記憶装置およびその製造方法

Info

Publication number
JPS6123360A
JPS6123360A JP59143230A JP14323084A JPS6123360A JP S6123360 A JPS6123360 A JP S6123360A JP 59143230 A JP59143230 A JP 59143230A JP 14323084 A JP14323084 A JP 14323084A JP S6123360 A JPS6123360 A JP S6123360A
Authority
JP
Japan
Prior art keywords
groove
trench
forming
semiconductor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59143230A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0351113B2 (de
Inventor
Kenji Miura
三浦　賢次
Ban Nakajima
中島　蕃
Kazushige Minegishi
峯岸　一茂
Takashi Morie
隆 森江
Akifumi Sotani
杣谷　聡文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59143230A priority Critical patent/JPS6123360A/ja
Priority to US06/753,283 priority patent/US4672410A/en
Priority to KR1019850004990A priority patent/KR900000207B1/ko
Priority to DE19853525418 priority patent/DE3525418A1/de
Publication of JPS6123360A publication Critical patent/JPS6123360A/ja
Publication of JPH0351113B2 publication Critical patent/JPH0351113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP59143230A 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法 Granted JPS6123360A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59143230A JPS6123360A (ja) 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法
US06/753,283 US4672410A (en) 1984-07-12 1985-07-09 Semiconductor memory device with trench surrounding each memory cell
KR1019850004990A KR900000207B1 (ko) 1984-07-12 1985-07-12 반도체 기억장치와 그 제조방법
DE19853525418 DE3525418A1 (de) 1984-07-12 1985-07-12 Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59143230A JPS6123360A (ja) 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6123360A true JPS6123360A (ja) 1986-01-31
JPH0351113B2 JPH0351113B2 (de) 1991-08-05

Family

ID=15333925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59143230A Granted JPS6123360A (ja) 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS6123360A (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116868A (ja) * 1984-08-31 1986-06-04 テキサス　インスツルメンツ　インコ−ポレイテツド メモリセルアレイ及びその製造方法
JPS6258657A (ja) * 1985-09-06 1987-03-14 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS62291055A (ja) * 1986-06-10 1987-12-17 Sony Corp 半導体メモリ装置
JPS6333862A (ja) * 1986-07-28 1988-02-13 Nec Corp 半導体記憶装置の製造方法
JPS63115367A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS63124455A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS63143860A (ja) * 1986-12-08 1988-06-16 Toshiba Corp 半導体装置及びその製造方法
JPS63234558A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体メモリ装置の製造方法
JP2012054334A (ja) * 2010-08-31 2012-03-15 Elpida Memory Inc 半導体デバイス及びその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636164U (de) * 1979-08-27 1981-04-07
JPS5919366A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd 半導体記憶装置
JPS6122665A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体集積回路装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636164U (de) * 1979-08-27 1981-04-07
JPS5919366A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd 半導体記憶装置
JPS6122665A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体集積回路装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116868A (ja) * 1984-08-31 1986-06-04 テキサス　インスツルメンツ　インコ−ポレイテツド メモリセルアレイ及びその製造方法
JPS6258657A (ja) * 1985-09-06 1987-03-14 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS62291055A (ja) * 1986-06-10 1987-12-17 Sony Corp 半導体メモリ装置
JPS6333862A (ja) * 1986-07-28 1988-02-13 Nec Corp 半導体記憶装置の製造方法
JPS63115367A (ja) * 1986-11-04 1988-05-19 Matsushita Electronics Corp 半導体装置の製造方法
JPS63124455A (ja) * 1986-11-13 1988-05-27 Mitsubishi Electric Corp 半導体記憶装置
JPS63143860A (ja) * 1986-12-08 1988-06-16 Toshiba Corp 半導体装置及びその製造方法
JPS63234558A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体メモリ装置の製造方法
JP2012054334A (ja) * 2010-08-31 2012-03-15 Elpida Memory Inc 半導体デバイス及びその製造方法

Also Published As

Publication number Publication date
JPH0351113B2 (de) 1991-08-05

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