JPH0353377B2 - - Google Patents

Description

[Detailed description of the invention]

FIELD OF INDUSTRIAL APPLICATION This invention relates to precision machined supports for photoconductive members and photoconductive members made from improved aluminum alloys. [Prior Art] Aluminum alloys are widely used in various structures such as building materials and automobile parts, but their use is particularly important as components of electrical and electronic devices that require precision processing, such as supports for photoconductive members. is increasing. However, general-purpose aluminum alloys for wrought materials, castings, die castings, etc. standardized by the Japanese Industrial Standards (JIS) include Ng, Cu, Mn,
It contains various impurity components together with various compositional components such as actively added components such as Si and Zn, and these may precipitate in the structure as inclusions or cause grain boundary steps, especially If it exists in the form of granular precipitates near the surface, it impairs the workability during precision machining, and as a result, it deteriorates the characteristics of electronic parts and the like whose constituent members are aluminum alloys. To explain this situation in more detail regarding photoconductive members, for example, electrophotographic photoreceptors are
Usually, a photoconductive layer is provided on the surface of a cylindrical support made of aluminum alloy. Various organic or inorganic photoconductive substances are used as materials for the photoconductive layer. For example, amorphous silicon (hereinafter referred to as a-Si) whose dangling bonds are modified with a monovalent element has photoconductivity and durability. Because it has excellent scratch resistance and heat resistance, it is expected to be used as a material for photoconductive layers. In order to put this a-Si into practical use, in addition to the a-Si photoconductive layer, a charge injection blocking layer that blocks charge injection from the support, SiNx,
It is necessary to use a surface protective layer such as SiCx to create a multilayer structure depending on the purpose. In this case, the uniformity of the photoconductive member is extremely important, and if there are defects such as non-uniform photoconductive properties or pinholes, it will not only be impossible to provide a beautiful image, but also impractical. . In particular, it is known that the morphology of the film of a-Si is greatly influenced by the surface shape of the support. In particular, the surface condition of the support is extremely important for large-area electrophotographic photoreceptor drums that require almost uniform photoconductive properties in most parts, and the presence of defects on the support surface may affect the uniformity of the film. As a result, columnar structures and spherical protrusions are formed, which causes photoconductive non-uniformity. [Problems to be Solved by the Invention] Therefore, when an aluminum alloy tube cylinder or the like is used as a support, in the process of performing various precision cutting or polishing processes such as mirror finishing and embossing on the surface, it is difficult to divide the material by grain boundaries. Due to differences in crystal orientation, the various crystal grains deformed and restored by stress during machining are the cause of so-called grain boundary steps. It causes unevenness of about 1000 Å or defects such as cracks along the grain boundaries, and many columnar structures and conical spherical protrusions occur on the grain boundaries, resulting in photoconductive non-uniformity and poor photoconductive properties. Abnormalities increase. Furthermore, large crystal grains have poor dispersion of stress generated during processing, resulting in large grain boundary steps. The inventors of the present invention have discovered that the above-mentioned conventional problems can be solved if the crystal grains are within a specific range, and have completed the present invention. An object of the present invention is to provide a precision-machined support for a photoconductive member, which is manufactured from an aluminum alloy in which structural abnormalities such as grain boundary steps are mainly suppressed, and which is more adaptable to precision machining. There is a particular thing. Another object of the present invention is to provide a photoconductive member with suppressed surface defects on the support and excellent uniformity of electrical, optical, and photoconductive properties. A further object of the present invention is to have fewer image defects;
An object of the present invention is to provide a photoconductive member capable of obtaining high-quality images. [Means for Solving the Problems] As a result of various studies to achieve the above object, the present inventors have found that as an effective means for eliminating structural abnormalities such as grain boundary steps as described above,
It has been found that the size of aluminum-based crystal grains partitioned by grain boundaries (grain size represented by maximum length) is at most 300 μm or less. In other words, if the crystal grain size exceeds 300 μm, the stress distribution during cutting will be poor as described above, and a large stress will be applied to each crystal grain, which will overwhelm the effects of the crystal orientation of each crystal grain. This is not preferable because it increases the grain boundary step. In addition, the average size of crystal grains (represented by the value calculated by dividing the length of a line segment by the number of crystal grains existing within a line segment separated by a certain length) is 100 μm or less,
Furthermore, it is preferably 50 μm or less, and the smaller the better. As a specific method for regulating the size of crystal grains within the range specified in the present invention, for example, normally,
For tubes obtained by extrusion and then drawing, it is necessary to increase the drawing rate and drawing rate during the drawing process and adjust the degree of work appropriately, and also to adjust the degree of work in the roll straightening process in the subsequent process. and setting conditions for the degree of processing in the heat treatment in the final process. In this way, in the present invention, the size of the crystal grains contained in the aluminum alloy is specified, but
The types, compositions, etc. of other alloy components including the substrate aluminum can be selected within the range generally employed in the technical field.
Practical compositions of the aluminum alloy used for manufacturing the precision-machined support for photoconductive members of the present invention are illustrated below. [Al-Mg system] Mg 0.5 to 10 wt% Si 0.5 wt% or less Fe 2000 ppm or less Cu 0.2 wt% or less (e.g. 0.04 to 0.2 wt%) Mn 1.0 wt% or less (e.g. 0.01 to 1.0 wt%) Cr 0.5 wt% (e.g. 0.05 to 0.5 wt%) Zn 0.25 wt% or less (e.g. 0.03 to 0.25 wt%) Ti 0.2 wt% or less (e.g. 0.05 to 0.2 wt%) H ₂ 1.0 cc or less per 100 g of Al Al Substantially the remainder [ Al-Mn system] Mn 0.3 to 1.5 wt% Si 0.5 wt% or less Fe 2000 ppm or less Cu 0.3 wt% or less (e.g. 0.05 to 0.3 wt%) Mg 1.3 wt% or less (e.g. 0.2 to 1.3 wt%) Cr 0.2 wt% or less (e.g. 0.1 to 0.2 wt%) Zn 0.4 wt% or less (e.g. 0.1 to 0.4 wt%) Ti 0.1 wt% or less H ₂ 1.0 cc or less per 100 g of Al Al Substantially remainder [Al-Cu system] Cu 0.5 to 10 (wt% Si 0.5 wt% or less) Fe 2000 ppm or less Mn 1.2 wt% or less (e.g. 0.2 to 1.2 wt%) Mg 1.8 wt% or less (e.g. 0.2 to 1.8 wt%) Cr 0.1 wt% or less Zn 0.3 wt% or less (e.g. 0.2 ~0.3% by weight) Ti 0.2% by weight or less (e.g. 0.15-0.2% by weight) H ₂ 1.0cc or less per 100g of Al Substantially the balance [Al-Mg-Si system] Mg 0.35-1.5% by weight Si 0.5-7 Weight % Fe 2000 ppm or less Cu 0.4 weight % or less (e.g. 0.1 to 0.4 weight %) Mn 0.8 weight % or less (e.g. 0.03 to 0.8 weight %) Cr 0.35 weight % or less (e.g. 0.03 to 0.35 weight %) Zn 0.25 weight % or less ( (e.g. 0.1 to 0.25 wt%) Ti 0.15 wt% or less (e.g. 0.1 to 0.15 wt%) H ₂ 1.0 cc or less per 100 g of Al Al Substantially the balance [pure aluminum] Mg 0.5 wt% or less (e.g. 0.02 to 0.5 wt. %) Si 0.3wt% or less Fe 2000ppm or less Cu 0.1wt% or less (e.g. 0.03-0.1wt%) Mn 0.05wt% or less (e.g. 0.02-0.05wt%) Cr Trace amount Zn 0.1wt% or less (e.g. 0.03-0.1wt%) %) Ti 0.1% by weight or less (e.g. 0.03 to 0.1% by weight) H ₂ 1.0cc or less per 100g of Al Substantially the remainder In the present invention, when selecting the composition of the aluminum alloy from the above composition range, use The material may be appropriately selected in consideration of, for example, mechanical strength, corrosion resistance, workability, heat resistance, dimensional accuracy, etc., as characteristics depending on the purpose. In addition, general-purpose aluminum alloys generally contain precipitates and inclusions caused by alloying ingredients that are actively added as needed and impurities that are unavoidably mixed in during processes such as refining and melting. Abnormal growth occurs at grain boundaries, etc., and hard spots called hard spots occur within the alloy structure machine, which impairs workability during precision processing and causes deterioration of the characteristics of the support for photoconductive materials obtained through precision processing. becomes. For example, silicon is difficult to form a solid solution with aluminum;
Si, SiO ₂ , Al-Si compounds, Al-Fe-Si compounds,
It is present in the aluminum structure as an Al-Si-Mg compound or as Al ₂ O ₃ in the form of islands, for example. In addition, hard grain boundary precipitates of Fe, Ti, etc. as oxides appear as hard spots. Therefore, in the aluminum alloy used in the present invention,
The size of the various inclusions mentioned above (particle size represented by the maximum length of inclusion particles) is 10 μm or less, and
The thickness is preferably 5 μm or less. Reduce the size of inclusions in aluminum alloy to 10μm
Specific methods for suppressing the following include, for example, using ceramic filters with small pore diameters used when melting aluminum alloys, and taking full advantage of the effects of the filters under thorough management. Use the lot when the filter is clogged to some extent. Other measures include measures to prevent melting furnace materials from getting mixed in, and increasing the thickness of the slag surface. Furthermore, for example, when precision machining involves mirror-finishing cutting, etc., the free machinability of the aluminum alloy is improved by coexisting magnesium or copper in the aluminum alloy. The content of magnesium or copper is preferably in the range of 0.5 to 10% by weight, particularly preferably in the range of 1 to 7% by weight. If the magnesium or copper content is less than 0.5% by weight, the addition effect will be insufficient, and if it is too high, intergranular corrosion will easily occur at the grain boundaries, so add more than 10% by weight. That is not desirable. Manganese contained in aluminum alloys is effective in increasing corrosion resistance, and in order to achieve the effect of its addition, it is desirable to add 0.3% by weight or more. However, if it exceeds 1.5% by weight, the precipitates tend to become coarse. Therefore, the amount of manganese used as a corrosion resistance improving additive is preferably in the range of 0.3 to 1.5% by weight. If both elements magnesium and silicon are present in the aluminum alloy, the amount of silicon added should be
Good strength and corrosion resistance can be achieved by setting the content to 0.5 to 7% by weight. Furthermore, in order to achieve free machinability while maintaining good strength and corrosion resistance, it is desirable to further add 0.35 to 1.5% by weight of magnesium. In addition, the iron contained in aluminum alloy is
Aluminum and silicon coexist with Fe-Al system and Fe.
-Al-Si based intermetallic compounds are formed and appear as hard spots in the aluminum matrix. In particular, this hard spot has an iron content of 2000ppm.
When the amount of iron increases beyond this point, the amount of iron increases rapidly, which has an adverse effect on, for example, mirror cutting. Therefore, the preferred iron content in the aluminum alloy of the present invention is 2000 ppm or less, more preferably 1000 ppm or less. Furthermore, hydrogen contained in aluminum alloys causes structural abnormalities such as pores (blisters), which impairs workability during precision processing and deteriorates the characteristics of the support for photoconductive members obtained through precision processing. Cause. Such inconveniences can be eliminated by particularly suppressing the amount of hydrogen in the aluminum alloy to 1.0 cc or less, more preferably 0.7 cc or less, per 100 grams of aluminum. Iron content in aluminum alloy
A specific method for suppressing the content to 2000 ppm or less is to use a highly pure Al metal as a raw material, for example, one that has been repeatedly electrolytically refined. Another method is to thoroughly control each process of melting and casting. A specific method for suppressing the amount of hydrogen contained in aluminum alloys to 1.0 cc or less per 100 grams of aluminum is to blow chlorine gas into the molten metal as a degassing step when melting Al alloys to remove the hydrogen present in the alloy structure. ₂ How to remove gas as HCl,
Alternatively, a method may be used in which the melted Al alloy is held in a vacuum furnace for a certain period of time, and the H ₂ gas present in the alloy structure is diffused and removed into the vacuum. After the aluminum alloy used in the present invention has been subjected to plastic working such as rolling and extrusion, it is subjected to precision processing that involves mechanical methods such as cutting or polishing, or chemical or physical methods such as chemical etching. The material is then formed into an appropriate shape depending on the purpose of use by combining heat treatment, thermal refining, etc. as needed. For example, when forming a tubular component that requires strict dimensional accuracy, such as an electrophotographic photoreceptor drum, a porthole extruded tube or a mandrel extruded tube obtained by ordinary extrusion processing is further cold-drawn. It is preferable to use a drawn tube obtained by When using such a tube, for example, when the tube surface is subjected to precision processing that involves mechanical methods such as cutting or polishing for mirror finishing, embossing, etc., or chemical or physical methods such as chemical etching, The characteristics of the aluminum alloy used in the present invention are particularly noticeable. The aluminum alloy used in the present invention is finished to a surface roughness of R _nax = 1 μm or less, preferably a flatness of R _nax = 0.05 μm or less, using means such as diamond-biting mirror finishing, cylindrical grinding, wrapping finish, etc. It is useful as a support for photoconductive members such as electrophotographic photoreceptors. Hereinafter, an example of the structure of a photoconductive member for electrophotography using a-Si as a photoconductive material will be described using the precision-machined support for a photoconductive member of the present invention manufactured from the above-mentioned aluminum alloy. Such a photoconductive member has, for example, a structure in which a charge injection blocking layer, a photoconductive layer (photosensitive layer), and a surface protection layer are sequentially laminated on a support. The shape of the support is determined as desired, but if it is used for electrophotography, for example, it is preferably in the form of an endless belt or a cylinder in the case of continuous high-speed copying. The thickness of the support is determined as appropriate so that the desired photoconductive member is formed, but if flexibility as a photoconductive member is required, the thickness of the support may be determined within a range that allows the support to function adequately. If possible, it will be made as thin as possible. However, even in such cases, from the viewpoint of manufacturing and handling of the support, as well as mechanical strength, it is usually
It is considered to be 10μm or more. The surface of the support is given a mirror finish by, for example, mirror hole cutting in order to maintain the uniformity of the photoconductive member, and the photoreceptor is used as a light source for digital image information using coherent monochromatic light such as a laser beam. In order to prevent interference fringes when used for recording, mechanical precision processing such as diamond cutting using a lathe, milling machine, etc., or other precision processing such as chemical etching may be used to create regular or irregular patterns such as a spiral pattern. Fine irregularities of the shape are added. The charge injection blocking layer is composed of, for example, a-Si containing hydrogen atoms and/or halogen atoms, and also contains elements belonging to the periodic group or group that are commonly used as impurities in semiconductors as substances that control conductivity. Contains atoms. The thickness of the charge injection blocking layer is preferably 0.01~
10μm, more preferably 0.05~8μm, optimally 0.07~
It is assumed to be 5μm. For example, instead of a charge injection blocking layer,
A barrier layer made of an electrically insulating material such as Al ₂ O ₃ , SiO ₂ , Si ₃ N ₄ or polycarbonate may be provided, or a charge injection blocking layer and a barrier layer may be used together. The photoconductive layer is composed of, for example, a-Si containing hydrogen atoms and/or halogen atoms, and optionally contains a substance controlling conductivity different from that used in the charge injection blocking layer. The thickness of the photoconductive layer is preferably 1 to 100 μm, more preferably 1 to 100 μm.
The thickness is 80 μm, optimally 2 to 50 μm. The surface protective layer is composed of, for example, SiCx, SiNx, etc., and the layer thickness is preferably 0.01 to 10 μm, more preferably 0.02 to 5 μm,
The optimum thickness is 0.04 to 5 μm. In the present invention, to form the photoconductive layer etc. made of a-Si, vacuum deposition methods that utilize various conventionally known discharge phenomena, such as glow discharge method, sputtering method, or ion plating method, are applied. Ru. Next, an example of a method for manufacturing a photoconductive member using a glow discharge decomposition method will be described. FIG. 1 shows an apparatus for manufacturing photoconductive members using a glow discharge decomposition method. The deposition tank 1 is composed of a base plate 2, a tank wall 3, and a top plate 4. A cathode electrode 5 is provided inside the deposition tank 1, and a cathode electrode 5 is provided inside the deposition tank 1. An alloy drum-shaped support 6 is installed at the center of the cathode electrode 5 and also serves as an anode electrode. To form an a-Si deposited film on a drum-shaped support using this manufacturing device, first close the raw material gas inflow valve 7 and leak valve 8, open the exhaust valve 9, and exhaust the inside of the deposited layer 1. . Vacuum gauge 10 reads approximately 5×10 ^-6 Torr
At the point when the temperature reaches
For example, SiH ₄ gas, SiH ₆ gas, adjusted to a predetermined mixing ratio in the mass flow controller 11.
A raw material mixed gas such as SiF ₄ gas is allowed to flow into the deposition tank 1 . At this time, the degree of opening of the exhaust valve 9 is adjusted while checking the reading on the vacuum gauge 10 so that the pressure within the deposited layer 1 reaches a desired value. After confirming that the surface temperature of the drum-shaped support 6 is set to a predetermined temperature by the heater 12, the high frequency power source 13 is set to a desired power to generate glow discharge in the deposition tank 1. During layer formation, the drum-shaped support 6 is rotated at a constant speed by a motor 14 in order to ensure uniform layer formation. In this manner, an a-Si deposited film can be formed on the drum-shaped support 6. Hereinafter, the present invention will be explained in detail based on examples. Examples 1 to 6, Comparative Examples 1 to 7 An aluminum alloy billet having the composition shown in Table 1 (Fe is ppm, H is cc per 100 g of aluminum, and the others are weight %) was cast and heated at a temperature of 500°C. After extrusion, cold drawing was performed to achieve an area reduction rate of 30%, and then at the temperature shown in Table 1,
The material was annealed for several hours and then allowed to cool naturally in air to obtain a support cylinder for a photoconductive member. A diamond cutting tool with a tip curvature of 0.01 (mm ^-1 ) was set on a lathe with an air damper for precision cutting (manufactured by PNEUMO PRECISION INC.) so as to obtain a negative rake angle of 5° with respect to the cylinder center angle. Next, 13 types of aluminum alloy cylinders with different crystal grain sizes shown in Table 1 were vacuum chucked on the rotating shaft flange of this lathe.
While using a combination of white kerosene spray from an attached nozzle and suction of chips from an attached vacuum nozzle,
Mirror cutting was performed so that the outer diameter was 80 mmφ at a circumferential speed of 1000 (m/min) and a feed rate of 0.01 (mm/R). The mirror-finished cylinders were inspected visually and with a metallurgical microscope for surface defects (egre-like scratches, cracks, and streak-like scratches) that had occurred after mirror-finishing, and the number thereof was determined. The amount of hydrogen contained in the cylinder was measured by cutting out a part of the manufactured cylinder and using it as a sample.
Measurements were made using the RH-IE model according to its specifications. Next, using the photoconductive member manufacturing apparatus shown in Fig. 1 on each of these mirror-finished aluminum alloy cylinders, photoconductive members were formed under the following conditions according to the glow discharge decomposition method described in detail above. was created.

[Table] Aluminum cylinder temperature: 250℃ Deposition chamber pressure during deposited film formation: 0.3Torr Discharge frequency: 13.56MHz Deposited film formation rate: 20Å/sec Discharge power: 0.18W/cm ^2Each electrophotographic photoreceptor thus obtained The drum was installed in a 400RE copying machine manufactured by Canon Inc., and an image was printed on A-3 paper.
(above) were evaluated. The results are shown in Table 1. The electrophotographic photosensitive drums of Examples 1 and 2 were further subjected to a durability test of 1 million sheets.
23℃/50% relative humidity, 30℃/90% relative humidity, 5
Tests were carried out under various environments at ℃/20% relative humidity, and it was confirmed that there were no image defects, especially defects such as white spots, and that the film had good durability.

【table】

[Table] [Effects of the Invention] According to the aluminum alloy of the present invention, structural abnormalities such as grain boundary steps are mainly suppressed or completely eliminated, thereby reducing workability due to precision processing and deterioration of desired characteristics of processed products. Because of this, it is suitable for use in photoconductive members where an accurate surface shape through precision processing is desired. In addition, the tubular material obtained by drawing this aluminum alloy has an accurate surface shape and high dimensional accuracy, so it is particularly suitable for constructing precise tubular components such as supports for electrophotographic photoreceptors. . Furthermore, the photoconductive member using the aluminum alloy as a support of the present invention has excellent uniformity of electrical, optical, or photoconductive properties, and especially when used for electrophotography, has few image defects and high quality. You can get the image.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an apparatus for manufacturing a photoconductive member using a glow discharge decomposition method. In the figure, 1 is a deposition tank, 2 is a base plate, 3 is a tank wall, 4 is a top plate, 5 is a cathode electrode,
6 is a drum-shaped support, 7 is a raw material gas inflow valve,
8 is a leak valve, 9 is an exhaust valve, 10 is a vacuum gauge, 11 is a mass flow controller, 12 is a heater, 13 is a high frequency power source, and 14 is a motor.

Claims (1)

[Claims] 1. A precision-machined support for a photoconductive member, characterized in that it is made from an alloy consisting of aluminum and impurities, and whose crystal grain size is at most 300 μm or less. 2. The precisely processed support for a photoconductive member according to claim 1, wherein the average size of the crystal grains is 100 μm or less. 3 The size of inclusions formed from the impurities is
The precisely processed support for a photoconductive member according to claim 1, which has a diameter of 10 μm or less. 4. The precisely processed support for a photoconductive member according to claim 1, wherein the iron content as the impurity is 2000 ppm or less. 5 Hydrogen as the impurity is aluminum 100
The precisely processed support for a photoconductive member according to claim 1, which has a weight of 1.0 cc or less per gram. 6. A precisely processed support for a photoconductive member, characterized in that it is manufactured from an alloy containing 0.5 to 10% by weight of magnesium, the remainder consisting of aluminum and impurities, and having a crystal grain size of at most 300 μm or less. 7. The precisely processed support for a photoconductive member according to claim 6, wherein the average size of the crystal grains is 100 μm or less. 8 The size of inclusions formed from the impurities is
The precisely processed support for a photoconductive member according to claim 6, which has a diameter of 10 μm or less. 9. The precisely processed support for a photoconductive member according to claim 6, wherein the iron content as the impurity is 2000 ppm or less. 10 Hydrogen as the impurity is aluminum
The precision-machined support for a photoconductive member according to claim 6, which has an amount of 1.0 cc or less per 100 grams. 11. A precisely processed support for a photoconductive member, characterized in that it is manufactured from an alloy containing 0.3 to 1.5% by weight of manganese, the remainder consisting of aluminum and impurities, and having a maximum crystal grain size of 300 μm or less. 12. The precisely processed support for a photoconductive member according to claim 11, wherein the average size of the crystal grains is 100 μm or less. 13. The precision-machined support for a photoconductive member according to claim 11, wherein the size of inclusions formed from the impurities is 10 μm or less. 14. The precisely processed support for a photoconductive member according to claim 11, wherein the iron content as the impurity is 2000 ppm or less. 15 Hydrogen as the impurity is aluminum
The precision-machined support for a photoconductive member according to claim 11, which has an amount of 1.0 cc or less per 100 grams. 16 Contains 0.5 to 10% by weight of copper, the balance consists of aluminum and impurities, and the crystal grain size is the largest
A precisely processed support for a photoconductive member, characterized in that it is manufactured from an alloy having a diameter of 300 μm or less. 17. The precisely processed support for a photoconductive member according to claim 16, wherein the average size of the crystal grains is 100 μm or less. 18. The precision-machined support for a photoconductive member according to claim 16, wherein the size of inclusions formed from the impurities is 10 μm or less. 19. The precisely processed support for a photoconductive member according to claim 16, wherein the iron content as the impurity is 2000 ppm or less. 20 Hydrogen as an impurity is aluminum
The precision-machined support for a photoconductive member according to claim 16, which has an amount of 1.0 cc or less per 100 grams. 21 A photoconductive device characterized by being manufactured from an alloy containing 0.35 to 1.5% by weight of magnesium, 0.5 to 7% by weight of silicon, the balance consisting of aluminum and impurities, and having a maximum crystal grain size of 300 μm or less Precision processed support for parts. 22. The precisely processed support for a photoconductive member according to claim 21, wherein the average size of the crystal grains is 100 μm or less. 23. The precision-machined support for a photoconductive member according to claim 21, wherein the size of inclusions formed from the impurities is 10 μm or less. 24. The precisely processed support for a photoconductive member according to claim 21, wherein the iron content as the impurity is 2000 ppm or less. 25 Hydrogen as the impurity is aluminum
The precision-machined support for a photoconductive member according to claim 21, which has an amount of 1.0 cc or less per 100 grams. 26. A photoconductive member comprising a support made of an alloy consisting of aluminum and impurities and having a crystal grain size of at most 300 μm or less, and a photoconductive layer provided on the support. 27. The photoconductive member according to claim 26, wherein the average size of the crystal grains is 100 μm or less. 28. The photoconductive member according to claim 26, wherein the size of the inclusion formed from the impurity is 10 μm or less. 29. The photoconductive member according to claim 26, wherein iron as the impurity is 2000 ppm or less. 30 Hydrogen as an impurity is aluminum
27. The photoconductive member according to claim 26, wherein the photoconductive member has an amount of 1.0 cc or less per 100 grams. 31 A support made of an alloy containing 0.5 to 10% by weight of magnesium, the balance consisting of aluminum and impurities, and having a maximum crystal grain size of 300 μm or less, and a photoconductive layer provided on the support. A photoconductive member comprising: 32. The photoconductive member according to claim 26, wherein the average size of the crystal grains is 100 μm or less. 33. The photoconductive member according to claim 31, wherein the size of inclusions formed from the impurities is 10 μm or less. 34. The photoconductive member according to claim 31, wherein iron as the impurity is 2000 ppm or less. 35 Hydrogen as the impurity is aluminum
32. The photoconductive member according to claim 31, wherein the photoconductive member has an amount of 1.0 cc or less per 100 grams. 36 A support made of an alloy containing 0.3 to 1.5% by weight of manganese, the remainder consisting of aluminum and impurities, and having a maximum crystal grain size of 300 μm or less, and a photoconductive layer provided on the support. A photoconductive member comprising: 37. The photoconductive member according to claim 36, wherein the average size of the crystal grains is 100 μm or less. 38. The photoconductive member according to claim 36, wherein the size of the inclusion formed from the impurity is 10 μm or less. 39. The photoconductive member according to claim 36, wherein iron as the impurity is 2000 ppm or less. 40 Hydrogen as an impurity is aluminum
37. The photoconductive member according to claim 36, wherein the photoconductive member has an amount of 1.0 cc or less per 100 grams. 41 A support made of an alloy containing 0.5 to 10% by weight of manganese, the balance consisting of aluminum and impurities, and a crystal grain size of at most 300 μm or less, and a photoconductive layer provided on the support. A photoconductive member comprising: 42. The photoconductive member according to claim 41, wherein the average size of the crystal grains is 100 μm or less. 43. The photoconductive member according to claim 41, wherein the size of the inclusion formed from the impurity is 10 μm or less. 44. The photoconductive member according to claim 41, wherein iron as the impurity is 2000 ppm or less. 45 Hydrogen as the impurity is aluminum
42. The photoconductive member according to claim 41, wherein the photoconductive member has an amount of 1.0 cc or less per 100 grams. 46 Magnesium 0.35-1.5% by weight, silicon
It has a support made of an alloy containing 0.5 to 7% by weight, the balance consisting of aluminum and impurities, and a crystal grain size of at most 300 μm, and a photoconductive layer provided on the support. A photoconductive member characterized by: 47. The photoconductive member according to claim 46, wherein the average size of the crystal grains is 100 μm or less. 48. The photoconductive member according to claim 46, wherein the size of the inclusion formed from the impurity is 10 μm or less. 49. The photoconductive member according to claim 46, wherein the iron as the impurity is 2000 ppm or less. 50 The hydrogen as the impurity is aluminum
47. The photoconductive member according to claim 46, wherein the photoconductive member has an amount of 1.0 cc or less per 100 grams.