JPH0354863B2 - - Google Patents
Info
- Publication number
- JPH0354863B2 JPH0354863B2 JP59117053A JP11705384A JPH0354863B2 JP H0354863 B2 JPH0354863 B2 JP H0354863B2 JP 59117053 A JP59117053 A JP 59117053A JP 11705384 A JP11705384 A JP 11705384A JP H0354863 B2 JPH0354863 B2 JP H0354863B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- hole
- holes
- view
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3415—Surface mounted components on both sides of the substrate or combined with lead-in-hole components
Landscapes
- Microwave Amplifiers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はマイクロ波通信機に使用するトランジ
スタを用いたMIC(Microwave IC)化高周波増
幅器に用いることができるマイクロ波回路装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a microwave circuit device that can be used in a MIC (Microwave IC) high frequency amplifier using transistors used in a microwave communication device.
従来例の構成とその問題点
近年、マイクロ波通信機の回路構成としては誘
電体基板上にマイクロストリツプ線路による回路
を形成したMIC回路が一般的に用いられるよう
になつたが、トランジスタを用いた増幅器を構成
する場合、トランジスタの接地を確実にしないと
利得が減少したり、動作が不安定となる。Conventional configurations and their problems In recent years, MIC circuits in which a microstrip line circuit is formed on a dielectric substrate have become commonly used as the circuit configuration for microwave communication equipment. When constructing the amplifier used, if the transistors are not grounded reliably, the gain will decrease and the operation will become unstable.
以下図面を参照しながら従来のマイクロ波回路
装置について説明する。第1図は従来のMIC化
増幅器のトランジスタの配設部の要部図面であ
る。同図aは裏面導体2を有する誘電体基板1上
に入出力マイクロストリツプ線路3aおよび3b
を形成し、トランジスタを接地するためのその内
側に裏面導体2を接続する導体を有する貫通穴4
aおよび4bを形成したMIC基板の要部斜視図
である。同図bは同図aのMIC基板にトランジ
スタ5を実装した要部斜視図で、6aおよび6b
は接地するエミツタ端子、7および8はそれぞれ
信号の入出力のベース端子およびコレクタ端子で
ある。同図cは同図bのA−A′断面図である。
さらに、同図dは同図bのB−B′断面図である。
なお、12はトランジスタの入出力端子間に生ず
る浮遊容量を示す。 A conventional microwave circuit device will be described below with reference to the drawings. FIG. 1 is a drawing of the main part of a conventional MIC amplifier where transistors are arranged. Figure a shows input/output microstrip lines 3a and 3b on a dielectric substrate 1 having a back conductor 2.
A through hole 4 having a conductor forming a conductor and connecting the back conductor 2 to the inside thereof for grounding the transistor.
FIG. 4 is a perspective view of the main parts of the MIC board on which portions a and 4b are formed. Figure b is a perspective view of the main parts of the transistor 5 mounted on the MIC board shown in figure a, with 6a and 6b
is an emitter terminal to be grounded, and 7 and 8 are a base terminal and a collector terminal for signal input/output, respectively. Figure c is a sectional view taken along line A-A' in figure b.
Furthermore, figure d is a sectional view taken along line BB' in figure b.
Note that 12 indicates a stray capacitance generated between the input and output terminals of the transistor.
さて、上記のようなMIC化増幅器においては
第1図dに示したようにトランジスタ5の入出力
端子7,8間に浮遊容量が発生するため回路が発
振状態に陥つたり、回路動作が不安定になるとい
う欠点を有していた。 Now, in the above-mentioned MIC amplifier, stray capacitance occurs between the input and output terminals 7 and 8 of the transistor 5, as shown in Figure 1d, which may cause the circuit to oscillate or malfunction. It had the disadvantage of being unstable.
発明の目的
本発明の目的はマイクロ波帯のMIC化増幅器
の入出力間の浮遊容量を減少させて回路動作の安
定化を図ることができるマイクロ波回路装置を提
供することにある。OBJECTS OF THE INVENTION An object of the present invention is to provide a microwave circuit device capable of stabilizing circuit operation by reducing stray capacitance between input and output of a microwave band MIC amplifier.
発明の構成
本発明のマイクロ波回路装置は、トランジスタ
の2つの接地端子を挿入するための2つの穴が幅
の狭いスリツトによつて結ばれた形状の貫通穴を
設けた誘電体基板上に前記貫通穴のスリツト部分
に直交するようにその両側にマイクロストリツプ
線路が設けられ、前記誘電体基板の残りの一方の
面には接地導体を形成すると共に前記貫通穴の内
側には前記接地導体に接続するように導体を形成
し、前記トランジスタは前記貫通穴の中央部に設
け、その入出力端子をそれぞれ前記マイクロスト
リツプ線路に接続し、かつ前記トランジスタの接
地端子を前記2つの穴の位置で前記接地導体に接
続したことを特長とするものであり、トランジス
タの接地を前記2つの穴の位置で得ることがで
き、かつトランジスタの入出力端子間に発生する
浮遊容量を前記幅の狭いスリツト状の貫通部によ
つて減少することができる利点を有する。Structure of the Invention The microwave circuit device of the present invention is provided on a dielectric substrate provided with a through hole in the shape of a narrow slit connecting two holes for inserting two ground terminals of a transistor. A microstrip line is provided on both sides of the slit portion of the through hole so as to be perpendicular to it, and a ground conductor is formed on the remaining surface of the dielectric substrate, and the ground conductor is formed inside the through hole. The transistor is provided in the center of the through hole, its input and output terminals are respectively connected to the microstrip line, and the ground terminal of the transistor is connected to the two holes. The transistor is connected to the ground conductor at the two holes, and the transistor can be grounded at the two holes, and the stray capacitance generated between the input and output terminals of the transistor can be reduced by connecting the ground conductor to the ground conductor at the narrow width. The slit-like penetrations have the advantage of being able to be reduced.
実施例の説明
第2図aは本発明の第1の実施例のマイクロ波
回路装置に用いるMIC基板の要部斜視図である。
同図で、13は誘電体基板、14は裏面導体、1
5および16はそれぞれ入出力のマイクロストリ
ツプ線路、17aおよび17bは円形の貫通穴、
18は幅の狭いスリツトであり、円形の貫通穴1
7aおよび17bを結ぶように延びている。な
お、貫通孔17a,17bおよびスリツト18は
その内側に裏面導体14を接続するように導体を
形成している。第2図bおよびcはそれぞれ第2
図aのC−C′断面図およびD−D′断面図である。
第3図aは第2図に示したMIC基板上にトラン
ジスタを実装したマイクロ波回路装置の上面図で
ある。同図で、19はトランジスタパツケージ、
20aおよび20bは接地するエミツタ端子、2
1および22はそれぞれ入力のベース端子、およ
び出力のコレクタ端子である。23a,23b,
24および25ははんだ付け部分である。第3図
bおよびcはそれぞれ第3図aのE−E′断面図お
よびF−F′断面図である。なお、26aおよび2
6bはそれぞれトランジスタの入出力端子とスリ
ツトの内側の接地導体間の容量である。DESCRIPTION OF EMBODIMENTS FIG. 2a is a perspective view of essential parts of a MIC board used in a microwave circuit device according to a first embodiment of the present invention.
In the figure, 13 is a dielectric substrate, 14 is a back conductor, 1
5 and 16 are input and output microstrip lines, 17a and 17b are circular through holes,
18 is a narrow slit, and a circular through hole 1
It extends to connect 7a and 17b. Incidentally, the through holes 17a, 17b and the slit 18 have conductors formed inside thereof so as to connect the back conductor 14. Figures 2b and c are the second
FIG. 2 is a cross-sectional view taken along line CC' and line D-D' in FIG.
FIG. 3a is a top view of the microwave circuit device shown in FIG. 2, in which transistors are mounted on the MIC board. In the same figure, 19 is a transistor package,
20a and 20b are emitter terminals to be grounded;
1 and 22 are an input base terminal and an output collector terminal, respectively. 23a, 23b,
24 and 25 are soldered parts. FIGS. 3b and 3c are sectional views taken along line EE' and line FF' of FIG. 3a, respectively. In addition, 26a and 2
6b is the capacitance between the input/output terminal of the transistor and the ground conductor inside the slit.
以上のように構成したマイクロ波回路装置で
は、トランジスタの接地がトランジスタパツケー
ジ19のごく近傍で得ることができ、かつトラン
ジスタの入出力間に発生する浮遊容量は、第3図
cに示すように直列帰還容量の一部が並列付加容
量になるため直列帰還容量が減少し、回路が発振
状態に陥りにくくなり、回路動作が安定化され
る。 In the microwave circuit device configured as described above, the transistor can be grounded very close to the transistor package 19, and the stray capacitance generated between the input and output of the transistor can be connected in series as shown in FIG. 3c. Since a part of the feedback capacitance becomes a parallel additional capacitance, the series feedback capacitance is reduced, the circuit is less likely to fall into an oscillation state, and the circuit operation is stabilized.
第4図は本発明の第2の実施例に用いるMIC
基板の要部斜視図である。同図で、27は誘電体
基板、28は裏面接地導体、29および30はそ
れぞれ入出力のマイクロストリツプ線路、31a
および31bはトランジスタの接地すべき電極の
形状に合わせた方形の貫通穴、32は幅の狭いス
リツトで貫通穴31aおよび31bを結ぶように
のびている。なお、貫通孔31a,31bおよび
スリツト32の内側には裏面導体28に接続する
ように導体を形成してある。第5図は実装するト
ランジスタの斜視図である。同図で、33はトラ
ンジスタパツケージ、34aおよび34bはそれ
ぞれ第4図に示したMIC基板の2つの方形の貫
通穴31aのおよび31bに入るように折り曲げ
た接地するエミツタ端子、35および36はそれ
ぞれ入力のベース端子および出力のコレクタ端子
である。第6図aは第4図のMIC基板に第5図
のトランジスタを実装したマイクロ波回路装置の
要部上面図である。同図で、37a,37b,3
8および39ははんだ付け部分である。第6図b
およびcはそれぞれ第6図aのG−G′断面図お
よびH−H′断面図である。 Figure 4 shows the MIC used in the second embodiment of the present invention.
FIG. 3 is a perspective view of the main parts of the board. In the figure, 27 is a dielectric substrate, 28 is a back ground conductor, 29 and 30 are input and output microstrip lines, and 31a
and 31b are rectangular through holes matching the shape of the electrodes to be grounded of the transistor, and 32 is a narrow slit extending so as to connect the through holes 31a and 31b. Note that a conductor is formed inside the through holes 31a, 31b and the slit 32 so as to be connected to the back conductor 28. FIG. 5 is a perspective view of the transistor to be mounted. In the figure, 33 is a transistor package, 34a and 34b are grounding emitter terminals bent to fit into the two rectangular through holes 31a and 31b of the MIC board shown in FIG. 4, and 35 and 36 are input terminals, respectively. The base terminal and the collector terminal of the output. FIG. 6a is a top view of essential parts of a microwave circuit device in which the transistors shown in FIG. 5 are mounted on the MIC board shown in FIG. 4. In the same figure, 37a, 37b, 3
8 and 39 are soldered parts. Figure 6b
and c are the GG' and H-H' sectional views of FIG. 6a, respectively.
以上のように構成したマイクロ波回路装置で
は、トランジスタの接地がトランジスタパツケー
ジ33のごく近傍で得られるとともに、トランジ
スタの入出力間に発生する浮遊量を接地導体を有
するスリツト状の貫通穴32によつて軽減するこ
とができ、回路動作を安定化することができる。
さらに、方形の貫通穴31a,31bにトランジ
スタの接地端子34a,34bを折り曲げて挿入
することにより、トランジスタの配置位置を明確
にすることができる。 In the microwave circuit device configured as described above, the grounding of the transistor can be obtained in the close vicinity of the transistor package 33, and the floating amount generated between the input and output of the transistor can be reduced by the slit-shaped through hole 32 having a ground conductor. Therefore, the circuit operation can be stabilized.
Furthermore, by bending and inserting the ground terminals 34a and 34b of the transistors into the rectangular through holes 31a and 31b, it is possible to clarify the placement position of the transistors.
第7図は本発明の更に他の実施例のマイクロ波
回路装置に用いるMIC基板の要部斜視図である。
同図で、40は誘電体基板、41は裏面導体、4
2および43はそれぞれ入出力マイクロストリツ
プ線路、44aおよび44bはそれぞれ方形の貫
通穴、45aおよび45bは方形の貫通穴部44
aおよび44bに接続する半円形の貫通穴、46
は幅の狭いスリツトで貫通穴44aおよび44b
を結ぶようにのびている。なお、貫通穴44a,
44b,45a,45bおよびスリツト46から
なる貫通穴の内側には、裏面導体41に接続する
導体を形成してある。第8図aは第7図のMIC
基板に第5図のトランジスタを実装したマイクロ
波回路装置の要部上面図である。同図で、47a
および47bはトランジスタの接地端子のはんだ
付け部分で、半円形の貫通穴部45a,45bに
はほんだを充てんしてある。48および49はそ
れぞれ入出力マイクロストリツプ線路42,43
とトランジスタの入出力端子35,36との接続
部のはんだ付け部分である。第8図bおよびcは
それぞれ同図aのI−I′断面図およびJ−J′断面
図である。 FIG. 7 is a perspective view of essential parts of a MIC board used in a microwave circuit device according to still another embodiment of the present invention.
In the figure, 40 is a dielectric substrate, 41 is a back conductor, and 4
2 and 43 are input/output microstrip lines, 44a and 44b are square through holes, and 45a and 45b are square through hole portions 44.
a semicircular through hole connecting to a and 44b, 46
are narrow slits through holes 44a and 44b.
It stretches out as if tying it together. Note that the through holes 44a,
A conductor connected to the back conductor 41 is formed inside the through hole made up of 44b, 45a, 45b and the slit 46. Figure 8a is the MIC of Figure 7.
6 is a top view of essential parts of a microwave circuit device in which the transistor of FIG. 5 is mounted on a substrate. FIG. In the same figure, 47a
Reference numerals 47b and 47b represent the soldering portions of the ground terminals of the transistors, and the semicircular through holes 45a and 45b are filled with solder. 48 and 49 are input/output microstrip lines 42 and 43, respectively.
This is the soldered portion of the connection between the input and output terminals 35 and 36 of the transistor. FIGS. 8b and 8c are a sectional view taken along line I-I' and sectional view taken along line J-J' in FIG. 8a, respectively.
さて、以上のように構成したマイクロ波回路装
置では、トランジスタの接地部分の半円形の貫通
部45a,45bにはんだを充てんすることによ
り、方形の貫通穴のみの場合に比べてより接地が
確実になされる。同時に、トランジスタの入出力
端子間の浮遊容量がスリツト状の貫通穴46によ
つて軽減され、回路動作を安定化することができ
る。さらに、トランジスタの接地端子を折り曲げ
て方形の貫通穴44a,44bに挿入することに
よりトランジスタの配置位置決定が容易になる。 Now, in the microwave circuit device configured as described above, by filling the semicircular penetration parts 45a and 45b of the grounding part of the transistor with solder, the grounding can be more reliably achieved than in the case of only a rectangular penetration hole. It will be done. At the same time, stray capacitance between the input and output terminals of the transistor is reduced by the slit-shaped through hole 46, making it possible to stabilize circuit operation. Further, by bending the ground terminals of the transistors and inserting them into the rectangular through holes 44a and 44b, it becomes easy to determine the placement position of the transistors.
なお、以上の実施例ではトランジスタの接地端
子を接続する貫通穴の形状を円形、方形、および
方形と円形の組み合わせとしたが、この形はこれ
らに限定されるものでなく、貫通穴によつてトラ
ンジスタの接地端子を接地できる形状であれば他
の形状でもよい。 Note that in the above embodiments, the shape of the through hole connecting the ground terminal of the transistor was circular, square, or a combination of square and circular, but the shape is not limited to these. Any other shape may be used as long as it can ground the ground terminal of the transistor.
発明の効果
以上の説明から明らかなように本発明は、トラ
ンジスタの2つの接地端子を挿入するための2つ
の穴が幅の狭いスリツトによつて結ばれた形状の
貫通穴を設けた誘電体基板上に前記貫通穴のスリ
ツト部分に直交するようにその両側にマイクロス
トリツプ線路を設けられ、前記誘電体基板の残り
の一方の面には接地導体を形成すると共に前記貫
通穴の内側には前記一方の面の接地導体に接続す
るように導体を形成し、前記トランジスタは前記
貫通穴の中央部に設け、その入出力端子はそれぞ
れ前記マイクロストリツプ線路に接続し、かつ前
記トランジスタの接地端子は前記2つの穴の位置
で前記接地導体に接続した構造のマイクロ波回路
装置であるため、トランジスタの接地をトランジ
スタパツケージのごく近傍で得ることができると
ともに、接地導体を有するスリツト状の貫通穴部
によつてトランジスタの入出力端子間に発生する
浮遊容量を減少することができ、回路動作を発振
状態に陥るのを防ぎ安定化するという効果が得ら
れる。Effects of the Invention As is clear from the above description, the present invention provides a dielectric substrate having a through hole in which two holes for inserting two ground terminals of a transistor are connected by a narrow slit. A microstrip line is provided on both sides of the through hole so as to be perpendicular to the slit portion of the through hole, and a ground conductor is formed on the remaining surface of the dielectric substrate, and a ground conductor is provided inside the through hole. A conductor is formed so as to be connected to the ground conductor on the one surface, the transistor is provided in the center of the through hole, its input and output terminals are respectively connected to the microstrip line, and the transistor is connected to the ground conductor. Since the microwave circuit device has a structure in which the terminals are connected to the ground conductor at the positions of the two holes, the transistor can be grounded very close to the transistor package. Depending on the part, stray capacitance generated between the input and output terminals of the transistor can be reduced, and the effect of preventing the circuit operation from falling into an oscillation state and stabilizing it can be obtained.
第1図は従来のMIC化増幅器の要部を示し、
同図aはMIC基板の斜視図、同図bはトランジ
スタを実装したMIC化増幅器の要部斜視図、同
図cはA−A′断面図、同図dはB−B′断面図、
第2図aは本発明の第1の実施例のMIC基板の
要部斜視図、同図bはC−C′断面図、同図cはD
−D′断面図、第3図aは本発明の第1の実施例
のMIC化増幅器の要部上面図、同図bはE−
E′断面図、同図cはF−F′断面図、第4図は本発
明の第2の実施例のMIC基板の要部斜視図、第
5図aは本発明の第2の実施例のMIC化増幅器
に用いるパツケージ入りトランジスタの斜視図、
第5図bはその背面図、第6図aは本発明の第2
の実施例のMIC化増幅器の要部上面図、同図b
はG−G′断面図、同図cはF−F′断面図、第7図
は本発明の他の実施例のMIC基板の要部斜視図、
第8図aは本発明の他の実施例のMIC化増幅器
の要部上面図、同図bはI−I′断面図、同図cは
J−J′断面図である。
18……狭幅スリツト、26a,b……トラン
ジスタの入出力端子と狭幅スリツトの内側接地導
体間の浮遊容量、31a,b……方形貫通穴、3
2……狭幅スリツト、45a,b……半円形貫通
穴、46……狭幅スリツト。
Figure 1 shows the main parts of a conventional MIC amplifier.
Figure a is a perspective view of the MIC board, Figure b is a perspective view of the main parts of an MIC amplifier with transistors mounted, Figure c is A-A' cross-sectional view, Figure d is B-B' cross-sectional view,
Figure 2a is a perspective view of essential parts of the MIC board according to the first embodiment of the present invention, Figure 2b is a sectional view taken along line C-C', and Figure 2c is a cross-sectional view of D
-D' sectional view, FIG.
E' cross-sectional view, Figure c is F-F' cross-sectional view, Figure 4 is a perspective view of essential parts of the MIC board according to the second embodiment of the present invention, and Figure 5 a is the second embodiment of the present invention. A perspective view of a packaged transistor used in a MIC amplifier.
FIG. 5b is a rear view thereof, and FIG. 6a is a second view of the present invention.
A top view of the main parts of the MIC amplifier according to the embodiment, Figure b
is a sectional view taken along the line G-G', c is a sectional view taken along the line FF', and FIG.
FIG. 8a is a top view of essential parts of an MIC amplifier according to another embodiment of the present invention, FIG. 8b is a sectional view taken along line I-I', and FIG. 8c is a sectional view taken along line J-J'. 18... Narrow slit, 26a, b... Stray capacitance between the input/output terminal of the transistor and the inner ground conductor of the narrow slit, 31a, b... Rectangular through hole, 3
2...Narrow width slit, 45a, b...Semicircular through hole, 46...Narrow width slit.
Claims (1)
めの2つ穴が幅の狭いスリツトによつて結ばれた
形状の貫通穴を設けた誘電体基板上に前記貫通穴
のスリツト部分に直交するようにその両側にマイ
クロストリツプ線路を設け、前記誘電体基板の残
りの一方の面に接地導体を形成すると共に前記貫
通穴の内側に前記接地導体に接続するように導体
を形成し、前記トランジスタを前記貫通穴の中央
部に対応するように前記誘電体基板上に配設し、
そのトランジスタの入出力端子をそれぞれ前記マ
イクロストリツプ線路に接続し、かつ前記トラン
ジスタの接地端子を前記2つの穴の位置で前記接
地導体に接続したことを特徴とするマイクロ波回
路装置。 2 トランジスタの2つの接地端子が挿入される
2つの穴をそれぞれ方形に形成したことを特徴と
する特許請求の範囲第1項記載のマイクロ波回路
装置。[Scope of Claims] 1. A dielectric substrate having a through hole in which two holes for inserting two ground terminals of a transistor are connected by a narrow slit, and a slit portion of the through hole. A microstrip line is provided on both sides of the dielectric substrate, and a ground conductor is formed on the remaining surface of the dielectric substrate, and a conductor is formed inside the through hole to be connected to the ground conductor. and disposing the transistor on the dielectric substrate so as to correspond to the center of the through hole,
A microwave circuit device characterized in that input and output terminals of the transistors are respectively connected to the microstrip line, and ground terminals of the transistors are connected to the ground conductor at the positions of the two holes. 2. The microwave circuit device according to claim 1, wherein the two holes into which the two ground terminals of the transistor are inserted are each formed in a square shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117053A JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59117053A JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261159A JPS60261159A (en) | 1985-12-24 |
| JPH0354863B2 true JPH0354863B2 (en) | 1991-08-21 |
Family
ID=14702254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59117053A Granted JPS60261159A (en) | 1984-06-07 | 1984-06-07 | Microwave circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60261159A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1013110A (en) * | 1996-06-25 | 1998-01-16 | Murata Mfg Co Ltd | Non-reciprocal circuit device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661570B2 (en) * | 1994-12-14 | 1997-10-08 | 日本電気株式会社 | High frequency device |
| JP2891299B2 (en) * | 1997-05-02 | 1999-05-17 | 日本電気株式会社 | Semiconductor microwave amplifier |
| JP7364364B2 (en) * | 2019-06-18 | 2023-10-18 | 矢崎総業株式会社 | amplifier circuit board |
-
1984
- 1984-06-07 JP JP59117053A patent/JPS60261159A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1013110A (en) * | 1996-06-25 | 1998-01-16 | Murata Mfg Co Ltd | Non-reciprocal circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60261159A (en) | 1985-12-24 |
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