JPH0367063U - - Google Patents
Info
- Publication number
- JPH0367063U JPH0367063U JP12818389U JP12818389U JPH0367063U JP H0367063 U JPH0367063 U JP H0367063U JP 12818389 U JP12818389 U JP 12818389U JP 12818389 U JP12818389 U JP 12818389U JP H0367063 U JPH0367063 U JP H0367063U
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- tube
- gas phase
- phase reaction
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010574 gas phase reaction Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図はこの考案に係わる気相反応管の一実施
例の側面図、第２図は気相反応管の従来例の側面
図、第３図は従来の気相反応管を用いて成膜する
状態を示す概念図である。
１……気相反応管、１１……反応部、１２……
ガス導入側、１３……ガス排気側。
Figure 1 is a side view of an embodiment of a gas phase reaction tube according to this invention, Figure 2 is a side view of a conventional example of a gas phase reaction tube, and Figure 3 is a film formation using a conventional gas phase reaction tube. FIG. 1... Gas phase reaction tube, 11... Reaction section, 12...
Gas introduction side, 13... gas exhaust side.
Claims (1)
し管内に導入されて流れる原料ガスが化学反応を
起こして生じる反応生成物を前記半導体基板表面
に堆積させて膜を形成させる横型の気相反応管に
おいて、気相反応管の内径が少なくとも前記反応
部で原料ガスの導入側から排気側に向かつて連続
的に小さくなつていることを特徴とする気相反応
管。 A horizontal gas phase reaction in which a semiconductor substrate placed inside the reaction section of a tube is heated, and the raw material gas introduced into the tube and flowing causes a chemical reaction and the resulting reaction products are deposited on the surface of the semiconductor substrate to form a film. A gas phase reaction tube characterized in that the inner diameter of the gas phase reaction tube decreases continuously from the source gas introduction side toward the exhaust side at least in the reaction section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12818389U JPH0367063U (en) | 1989-11-01 | 1989-11-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12818389U JPH0367063U (en) | 1989-11-01 | 1989-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0367063U true JPH0367063U (en) | 1991-06-28 |
Family
ID=31675902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12818389U Pending JPH0367063U (en) | 1989-11-01 | 1989-11-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0367063U (en) |
-
1989
- 1989-11-01 JP JP12818389U patent/JPH0367063U/ja active Pending