JPH0367076U - - Google Patents
Info
- Publication number
- JPH0367076U JPH0367076U JP12897189U JP12897189U JPH0367076U JP H0367076 U JPH0367076 U JP H0367076U JP 12897189 U JP12897189 U JP 12897189U JP 12897189 U JP12897189 U JP 12897189U JP H0367076 U JPH0367076 U JP H0367076U
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- semiconductor crystal
- region
- vapor phase
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 2
- 238000001947 vapour-phase growth Methods 0.000 claims 2
- 238000002109 crystal growth method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図はこの考案の一実施例による半導体結晶
成長装置を示す模式図、第２図は従来の結晶成長
装置の一例を示す模式図である。
１……基板、２……カーボンボート、６……Ｈ
２ガス、７……キヤリア用ＨＣｌガス、８……ド
ーピングガス。なお図中同一符号は同一又は相当
部分を示す。
FIG. 1 is a schematic diagram showing a semiconductor crystal growth apparatus according to an embodiment of this invention, and FIG. 2 is a schematic diagram showing an example of a conventional crystal growth apparatus. 1...Substrate, 2...Carbon boat, 6...H
2 gas, 7... HCl gas for carrier, 8... doping gas. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
なう半導体結晶成長装置であつて、 同一炉内に、 液晶成長用カーボンボートに搭載された基板が
載置される領域と、 気相成長のための金属蒸気を発生させる領域と
を備え、上気各成長法を任意に用いて一連の連続
動作により結晶成長することを特徴とする半導体
結晶成長装置。[Scope of Claim for Utility Model Registration] A semiconductor crystal growth apparatus that performs crystal growth using a liquid crystal growth method and a vapor phase growth method, in which a substrate mounted on a carbon boat for liquid crystal growth is placed in the same furnace. What is claimed is: 1. A semiconductor crystal growth apparatus comprising: a semiconductor crystal growth region; and a region for generating metal vapor for vapor phase growth;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12897189U JPH0367076U (en) | 1989-11-02 | 1989-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12897189U JPH0367076U (en) | 1989-11-02 | 1989-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0367076U true JPH0367076U (en) | 1991-06-28 |
Family
ID=31676640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12897189U Pending JPH0367076U (en) | 1989-11-02 | 1989-11-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0367076U (en) |
-
1989
- 1989-11-02 JP JP12897189U patent/JPH0367076U/ja active Pending
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