JPH0367434U - - Google Patents
Info
- Publication number
- JPH0367434U JPH0367434U JP12834489U JP12834489U JPH0367434U JP H0367434 U JPH0367434 U JP H0367434U JP 12834489 U JP12834489 U JP 12834489U JP 12834489 U JP12834489 U JP 12834489U JP H0367434 U JPH0367434 U JP H0367434U
- Authority
- JP
- Japan
- Prior art keywords
- inner lead
- dummy
- tab
- leads
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000008188 pellet Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011889 copper foil Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 238000007689 inspection Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Description
第１図は本考案の一実施例に係るＴＡＢ式ＩＣ
を構成する半導体ペレツトとＴＡＢテープの一部
破断斜視図、第２図はインナーリードと電極との
接合状態を示す要部断面図、第３図は従来のＴＡ
Ｂ式ＩＣを構成する半導体ペレツトとＴＡＢテー
プの一部破断斜視図、第４図は接合部の検査状態
を示す要部断面図である。
１……半導体ペレツト、２……電極、３……Ｔ
ＡＢテープ、４……フイルム、４ｂ……透孔、５
……銅箔、６……インナーリード、８……ダミー
電極、９……ダミーインナーリード。
Figure 1 shows a TAB type IC according to an embodiment of the present invention.
Fig. 2 is a partially cutaway perspective view of the semiconductor pellet and TAB tape that make up the TAB tape, Fig. 2 is a sectional view of the main part showing the bonding state between the inner lead and the electrode, Fig. 3 is a conventional TA
FIG. 4 is a partially cutaway perspective view of the semiconductor pellet and TAB tape constituting the Type B IC, and FIG. 4 is a sectional view of the main part showing the state of inspection of the joint. 1...Semiconductor pellet, 2...Electrode, 3...T
AB tape, 4...Film, 4b...Through hole, 5
...Copper foil, 6...Inner lead, 8...Dummy electrode, 9...Dummy inner lead.
Claims (1)
た銅箔をエツチングして透孔内に延びるインナー
リードを含む導電パターンを形成したＴＡＢテー
プの上記インナーリードと、半導体ペレツトに形
成された対応する電極とを熱圧着してなるＴＡＢ
式半導体装置において、 上記ＴＡＢテープの透孔内に、少なくとも１本
のダミーインナーリードを延設すると共に、該ダ
ミーインナーリードを接合するダミー電極を半導
体ペレツトに形成し、該ダミー電極と上記ダミー
インナーリードとを互いに熱圧着したことを特徴
とするＴＡＢ式半導体装置。[Scope of Claim for Utility Model Registration] The above-mentioned inner lead of a TAB tape in which a conductive pattern including inner leads extending into the holes is formed by etching a copper foil laminated on a film in which through holes are bored at predetermined intervals; TAB made by thermocompression bonding with corresponding electrodes formed on semiconductor pellets
In the type semiconductor device, at least one dummy inner lead is extended into the through hole of the TAB tape, a dummy electrode is formed on the semiconductor pellet to connect the dummy inner lead, and the dummy electrode and the dummy inner lead are connected to each other. A TAB type semiconductor device characterized by having leads and leads bonded together by thermocompression.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12834489U JPH0367434U (en) | 1989-10-31 | 1989-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12834489U JPH0367434U (en) | 1989-10-31 | 1989-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0367434U true JPH0367434U (en) | 1991-07-01 |
Family
ID=31676056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12834489U Pending JPH0367434U (en) | 1989-10-31 | 1989-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0367434U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831566A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Semiconductor device |
-
1989
- 1989-10-31 JP JP12834489U patent/JPH0367434U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831566A (en) * | 1981-08-18 | 1983-02-24 | Nec Corp | Semiconductor device |
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