JPH0368330B2 - - Google Patents
Info
- Publication number
- JPH0368330B2 JPH0368330B2 JP23456582A JP23456582A JPH0368330B2 JP H0368330 B2 JPH0368330 B2 JP H0368330B2 JP 23456582 A JP23456582 A JP 23456582A JP 23456582 A JP23456582 A JP 23456582A JP H0368330 B2 JPH0368330 B2 JP H0368330B2
- Authority
- JP
- Japan
- Prior art keywords
- suction cup
- semiconductor wafer
- pressure sensor
- sample
- adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000001179 sorption measurement Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/0061—Force sensors associated with industrial machines or actuators
- G01L5/0076—Force sensors associated with manufacturing machines
- G01L5/009—Force sensors associated with material gripping devices
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体ウエハの吸着度測定装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for measuring the adsorption degree of semiconductor wafers.
EB描画装置などを使用して半導体ウエハに直
接描画するに際しては、テーブルホルダ上の吸着
盤に半導体ウエハを確実に固定しなければならな
い。
When drawing directly on a semiconductor wafer using an EB drawing device or the like, the semiconductor wafer must be securely fixed to a suction cup on a table holder.
その固定手段として、機械的チヤツク、真空チ
ヤツク、静電チヤツクが知られている。 Mechanical chucks, vacuum chucks, and electrostatic chucks are known as the fixing means.
静電チヤツクにおいては、半導体ウエハの吸着
力を知る方法として、印加電圧の値から、次式を
使用して逆算するか、または概略値として半導体
ウエハに流れるリーク電流を測定する方法が用い
られていた。 For electrostatic chucks, the method of determining the adsorption force of a semiconductor wafer is to calculate it backwards from the applied voltage value using the following formula, or to measure the leakage current flowing through the semiconductor wafer as an approximate value. Ta.
吸着力Ｆ＝Ａ（Va−Vb）2／8πD2・εB〔Kg〕
〔εB：半導体ウエハとチヤツクとの間における絶
縁層の比誘電率、
Va：半導体ウエハ上の電位
Vb：チヤツク上の電位
Ａ：チヤツク上の面積
Ｄ：チヤツクの電極と半導体ウエハとの間の距
離
しかしながら、周知のように半導体ウエハは
“そり”があるので、印加電圧値だけではどの程
度の力で半導体ウエハ全面が固定されているのか
が不明である。また、半導体ウエハに流れるリー
ク電流は、nAオーダであるから、これは電極を
支える絶縁物に流れるリーク電流の値とほとんど
変わらない。従つて半導体ウエハに流れるリーク
電流から半導体ウエハの吸着力を測定することは
困難である。 Adsorption force F=A(Va-Vb) 2 /8πD 2・ε B [Kg] [ε B : Relative permittivity of the insulating layer between the semiconductor wafer and the chuck, Va: Potential on the semiconductor wafer Vb: On the chuck A: Area on the chuck D: Distance between the chuck electrode and the semiconductor wafer However, as is well known, semiconductor wafers have "warpage", so it is difficult to determine how much force can be applied to the entire surface of the semiconductor wafer using only the applied voltage value. It is unclear whether it is fixed. Furthermore, since the leakage current flowing through the semiconductor wafer is on the order of nA, this is almost the same value as the leakage current flowing through the insulator supporting the electrode. Therefore, it is difficult to measure the attraction force of the semiconductor wafer from the leakage current flowing through the semiconductor wafer.
本発明は上記事情に基づいてなされたもので、
半導体ウエハがどの程度の力で、チヤツク面（吸
着盤上）に吸着固定されているかを定量的に測定
することができる半導体ウエハの吸着度測定装置
を得ることを目的としている。
The present invention was made based on the above circumstances, and
The object of the present invention is to provide a semiconductor wafer suction degree measuring device that can quantitatively measure the force with which a semiconductor wafer is suctioned and fixed to a chuck surface (on a suction cup).
〔発明の概要）
本発明においては、テーブルホルダ上の吸着盤
の少なくとも１箇所に、その上面上に吸着される
半導体ウエハによつて相対的に押されるように圧
力センサを埋設し、この圧力センサの出力信号に
基づいて半導体ウエハの吸着度を知るようにする
ことによつて、前記目的を達成している。[Summary of the Invention] In the present invention, a pressure sensor is embedded in at least one location of a suction cup on a table holder so as to be relatively pressed by a semiconductor wafer suctioned onto the upper surface of the suction cup, and the pressure sensor The above object is achieved by determining the degree of adsorption of the semiconductor wafer based on the output signal of the device.
第１図はこの発明の一実施例を示す断面図であ
る。図中１はテーブルホルダであり、実際描画の
場合はこのテーブルホルタ１がＸ、Ｙ軸平面上を
移動する。２は全面にアルミナ等の絶縁被膜を施
こした吸着盤であり、この吸着盤２はテーブルホ
ルダ１上に固定用板バネ１３によつて取付けられ
ている。３は吸着盤２上面に吸着されるシリコン
ウエハなどの試料である。４及び５は、それぞれ
吸着盤２および試料３に電気的接続した電極であ
る。これら電極４，５に、電源６から高電圧を印
加し、吸着翻２と試料３との間に静電力を発生さ
せることによつて、試料３は吸着盤２上面上に吸
着固定される。
FIG. 1 is a sectional view showing an embodiment of the present invention. 1 in the figure is a table holder, and in actual drawing, this table holder 1 moves on the X and Y axis planes. Reference numeral 2 denotes a suction cup whose entire surface is coated with an insulating coating such as alumina, and this suction cup 2 is attached to the table holder 1 by a fixing leaf spring 13. 3 is a sample such as a silicon wafer that is sucked onto the upper surface of the suction cup 2; 4 and 5 are electrodes electrically connected to the suction cup 2 and the sample 3, respectively. By applying a high voltage from a power source 6 to these electrodes 4 and 5 and generating electrostatic force between the suction cup 2 and the sample 3, the sample 3 is suctioned and fixed onto the upper surface of the suction cup 2.
吸着盤２には、上下に貫通した孔２ａが形成さ
れており、この孔２ａ中に半導体圧力センサ７が
挿入されている。圧力センサ７の出力信号は、吸
着度を測定して得た値を演算するための演算器８
に入力される。 A hole 2a is formed in the suction cup 2 and extends vertically through the suction cup 2, and a semiconductor pressure sensor 7 is inserted into the hole 2a. The output signal of the pressure sensor 7 is sent to a calculator 8 for calculating the value obtained by measuring the degree of adsorption.
is input.
９はテーブルホルダ１上に置かれたスプリング
であり、このスプリング９上には圧力センサ７が
載置されている。スプリング９は、圧力センサ７
の上端面が、吸着盤２の上面上より若干（0.1〜
0.2mm程度）突出するようにその高さが選定され
ている。 A spring 9 is placed on the table holder 1, and a pressure sensor 7 is placed on the spring 9. The spring 9 is connected to the pressure sensor 7
The upper end surface is slightly higher than the upper surface of the suction cup 2 (0.1~
The height is selected so that it protrudes (approximately 0.2 mm).
以上のようにこの実施例は構成されているので
吸着盤２と試料３とに高電圧を印加して吸着盤２
に試料３を吸着させると、試料３が圧力センサ７
を下方に押し付ける。このため圧力センサ７はこ
の押付力を受けて、スプリング９の弾力に抗して
沈み、試料３は吸着盤２上面に吸着固定される。
一方、このときの圧力センサ７の出力信号の値を
演算器８において測定することによつて、試料３
の吸着度が定量的に得られる。スプリング９のバ
テ定数を変えることによつて、圧力センサ７の検
出感度を調節することができる。 Since this embodiment is configured as described above, a high voltage is applied to the suction cup 2 and the sample 3, and the suction cup 2 is
When the sample 3 is adsorbed on the pressure sensor 7, the sample 3 is attached to the pressure sensor 7.
Press down. Therefore, the pressure sensor 7 receives this pressing force and sinks against the elasticity of the spring 9, and the sample 3 is suctioned and fixed to the upper surface of the suction cup 2.
On the other hand, by measuring the value of the output signal of the pressure sensor 7 at this time in the calculator 8, the sample 3
The degree of adsorption can be obtained quantitatively. By changing the fatigue constant of the spring 9, the detection sensitivity of the pressure sensor 7 can be adjusted.
なお、第２図に平面図で示すように、吸着盤の
数ケ所に、圧力センサ７を設けることによつて、
吸着盤２の全体における試料３の密着度を知るこ
とができる。また、圧力センサ７をスプリング９
の代りに適当な昇降機構上に載置し、吸着盤２上
に試料３を吸着した後、圧力センサ７を、昇降機
構によつて、試料３の下面に押し上げて、測定ダ
イナミツクレンジを広げ吸着度を測定することも
できる。さらに、上述のような静電チヤツク構造
以外に機械的チヤツク、真空チヤツクにも本発明
は適用可能である。 In addition, as shown in the plan view in FIG. 2, by providing pressure sensors 7 at several locations on the suction cup,
The degree of adhesion of the sample 3 to the entire suction cup 2 can be known. Also, the pressure sensor 7 is connected to the spring 9
Instead, the sample 3 is placed on a suitable lifting mechanism, and after adsorbing the sample 3 onto the suction cup 2, the pressure sensor 7 is pushed up to the lower surface of the sample 3 by the lifting mechanism to widen the measurement dynamics range. It is also possible to measure the degree of adsorption. Further, in addition to the electrostatic chuck structure as described above, the present invention is also applicable to mechanical chucks and vacuum chucks.
第３図に示すように、圧力センサ７の出力信号
値を、基準電圧設定器１０からの吸着力に換算し
た基準電圧値と、帰還増巾器１１において比較し
この帰還増巾器１１において比較し、この帰還増
巾器１１からの前記両入力の偏差に対応した出力
信号を、高電圧発生装置１２にフイードバツクし
て、前記偏差がなくなるように、電極４，５に高
電圧発生装置１２から印加される高電圧の値を制
御し、もつて、試料３の吸着力を一定にすること
もできる。 As shown in FIG. 3, the output signal value of the pressure sensor 7 is compared with the reference voltage value converted into the adsorption force from the reference voltage setting device 10 in the feedback amplifier 11. Then, the output signal corresponding to the deviation between the two inputs from the feedback amplifier 11 is fed back to the high voltage generator 12, and the output signal from the high voltage generator 12 to the electrodes 4 and 5 is fed back to the high voltage generator 12 so that the deviation disappears. It is also possible to control the value of the applied high voltage, thereby making the adsorption force of the sample 3 constant.
以上説明したように、本発明によれば、半導体
ウエハの吸着度を極めて確実に定量的に測定する
ことができる。
As described above, according to the present invention, the degree of adsorption of a semiconductor wafer can be quantitatively measured with great reliability.
第１図は本発明一実施例の断面図、第２図は本
発明の他の実施例の一部を示す平面図、第３図は
本発明のさらに他の実施例の断面図である。
１……テーブルホルダ、２……吸着盤、３……
試料、７……半導体圧力センサ、８……演算器。
FIG. 1 is a sectional view of one embodiment of the invention, FIG. 2 is a plan view showing a part of another embodiment of the invention, and FIG. 3 is a sectional view of still another embodiment of the invention. 1...Table holder, 2...Suction cup, 3...
Sample, 7... Semiconductor pressure sensor, 8... Arithmetic unit.
Claims (1)
所に、その上面上に吸着される半導体ウエハによ
つて相対的に押されるように埋設された圧力セン
サと、前記圧力センサからの信号に基づいて前記
ウエハの吸着度を測定して得た値を演算するため
の演算器とを備えたことを特徴とする半導体ウエ
ハの吸着度測定装置。1. A pressure sensor embedded in at least one location of a suction cup on the table holder so as to be relatively pressed by the semiconductor wafer suctioned onto the upper surface of the suction cup, and a 1. A device for measuring the degree of adsorption of a semiconductor wafer, comprising: a calculator for calculating a value obtained by measuring the degree of adsorption of a semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23456582A JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23456582A JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59122922A JPS59122922A (en) | 1984-07-16 |
| JPH0368330B2 true JPH0368330B2 (en) | 1991-10-28 |
Family
ID=16973002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23456582A Granted JPS59122922A (en) | 1982-12-28 | 1982-12-28 | Device for measuring sucking degree of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59122922A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04206546A (en) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | Plasma treatment method and device |
| JP2891160B2 (en) * | 1995-05-02 | 1999-05-17 | 日新電機株式会社 | Vacuum processing apparatus and method for obtaining target processing object by the apparatus |
| KR101362673B1 (en) * | 2006-11-03 | 2014-02-12 | 엘아이지에이디피 주식회사 | Electro static force measuring apparatus and electro static force measuring method |
-
1982
- 1982-12-28 JP JP23456582A patent/JPS59122922A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59122922A (en) | 1984-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5136247A (en) | Apparatus and methods for calibrated work function measurements | |
| JPS5979545A (en) | Electrostatic chucking device | |
| US6215640B1 (en) | Apparatus and method for actively controlling surface potential of an electrostatic chuck | |
| US6915232B2 (en) | Film thickness measuring method, relative dielectric constant measuring method, film thickness measuring apparatus, and relative dielectric constant measuring apparatus | |
| JPH0368330B2 (en) | ||
| JPH09211046A (en) | Non-contact potential detection method and device | |
| JPH08313550A (en) | Semiconductor acceleration sensor and method for evaluating characteristics of sensor element of the sensor | |
| US5097214A (en) | Method and apparatus for determining the properties of an insulation layer by maintaining an output current ratio generated by directing ions at the insulation layer | |
| US4072896A (en) | Apparatus for measuring the electron escape potential of metal surfaces | |
| US7598746B2 (en) | Surface voltmeter and surface voltage measurement method | |
| JPH07130827A (en) | Wafer electrostatic adsorption device | |
| JPH088444Y2 (en) | Oil detection sensor | |
| JP2001230310A (en) | Apparatus and method for evaluating electrostatic chuck | |
| JP4007597B2 (en) | Capacitance sensor type measuring device | |
| JPH01162103A (en) | Electronically measuring apparatus for surface especially applicable for inspection of connection part | |
| JP4514944B2 (en) | Film thickness measuring device | |
| JPH0225050A (en) | Method for determining semiconductor pressure sensor characteristics | |
| JPH05249165A (en) | Semiconductor potential sensor | |
| JPH03210470A (en) | Material surface inspection method and device | |
| JPS63304622A (en) | Impurity doping method and equipment therefor | |
| JPH06334024A (en) | Substrate retainer | |
| RU2266588C1 (en) | Method for estimating electrical heterogeneity of semiconductor surface | |
| SU1711271A1 (en) | Method of production of electric contact to semiconductor or dielectric material | |
| JPH0627653Y2 (en) | Etching device | |
| JPS63110672A (en) | Measurement of semiconductor pressure sensor |