JPH038435U - - Google Patents

Info

Publication number
JPH038435U
JPH038435U JP1989067483U JP6748389U JPH038435U JP H038435 U JPH038435 U JP H038435U JP 1989067483 U JP1989067483 U JP 1989067483U JP 6748389 U JP6748389 U JP 6748389U JP H038435 U JPH038435 U JP H038435U
Authority
JP
Japan
Prior art keywords
electrode
emitter
base
island
bonding pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1989067483U
Other languages
Japanese (ja)
Other versions
JPH08756Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989067483U priority Critical patent/JPH08756Y2/en
Publication of JPH038435U publication Critical patent/JPH038435U/ja
Application granted granted Critical
Publication of JPH08756Y2 publication Critical patent/JPH08756Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Wire Bonding (AREA)
  • Bipolar Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図および第３図は夫々本考案を説
明する為の平面図、第１図のＡＡ線断面図、およ
び第１図のＢＢ線断面図、第４図は本考案を説明
する為の平面図、第５図と第６図は従来例を説明
する為の平面図と断面図、第７図と第８図は提案
された構造を説明する為の平面図と断面図である
。 Figures 1, 2, and 3 are plan views for explaining the present invention, cross-sectional views taken along line AA in Figure 1, and cross-sectional views along line BB in Figure 1, and Figure 4 for explaining the present invention. Figures 5 and 6 are plan views and cross-sectional views for explaining the conventional example, and Figures 7 and 8 are plan views and cross-sectional views for explaining the proposed structure. be.

Claims (1)

【実用新案登録請求の範囲】 (1) メツシユエミツタ構造を有し、第１層目電
極層がメツシユ状エミツタ電極と島状ベース電極
を形成し、第２層目電極が前記メツシユ状エミツ
タ電極と島状ベース電極の夫々にコンタクトして
櫛歯状エミツタ電極と櫛歯状ベース電極を形成す
ると共に、前記櫛歯状エミツタ電極と櫛歯状ベー
ス電極の一部はベース領域上において拡張されて
夫々エミツタボンデイングパツドとベースボンデ
イングパツドを形成するトランジスタにおいて、 前記エミツタボンデイングパツドの下部の島状
ベース電極を除去し、且つ前記エミツタボンデイ
ングパツドの下部の島状ベース領域を前記エミツ
タボンデイングパツド周囲まで拡張してストライ
ブ状に形成したことを特徴とする半導体装置。 (2) 前記ストライブ状ベース領域の端部に前記
島状ベース電極を配設したことを特徴とする請求
項第１項に記載のトランジスタ。[Claims for Utility Model Registration] (1) It has a mesh emitter structure, the first electrode layer forms a mesh emitter electrode and an island base electrode, and the second electrode layer forms an island between the mesh emitter electrode and the island base electrode. A comb-shaped emitter electrode and a comb-shaped base electrode are formed by contacting each of the comb-shaped base electrodes, and a part of the comb-shaped emitter electrode and the comb-shaped base electrode are expanded on the base region to form an emitter electrode, respectively. In a transistor forming an ivy bonding pad and a base bonding pad, an island-like base electrode under the emitter bonding pad is removed, and an island-like base region under the emitter bonding pad is formed into the emitter bonding pad. A semiconductor device characterized in that it is formed in a stripe shape extending to the periphery of a bonding pad. (2) The transistor according to claim 1, wherein the island-shaped base electrode is disposed at an end of the striped base region.
JP1989067483U 1989-06-09 1989-06-09 Transistor Expired - Lifetime JPH08756Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989067483U JPH08756Y2 (en) 1989-06-09 1989-06-09 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989067483U JPH08756Y2 (en) 1989-06-09 1989-06-09 Transistor

Publications (2)

Publication Number Publication Date
JPH038435U true JPH038435U (en) 1991-01-28
JPH08756Y2 JPH08756Y2 (en) 1996-01-10

Family

ID=31601096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989067483U Expired - Lifetime JPH08756Y2 (en) 1989-06-09 1989-06-09 Transistor

Country Status (1)

Country Link
JP (1) JPH08756Y2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422062A (en) * 1987-07-17 1989-01-25 Sanyo Electric Co Transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422062A (en) * 1987-07-17 1989-01-25 Sanyo Electric Co Transistor

Also Published As

Publication number Publication date
JPH08756Y2 (en) 1996-01-10

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term