JPH0415247U - - Google Patents
Info
- Publication number
- JPH0415247U JPH0415247U JP5608590U JP5608590U JPH0415247U JP H0415247 U JPH0415247 U JP H0415247U JP 5608590 U JP5608590 U JP 5608590U JP 5608590 U JP5608590 U JP 5608590U JP H0415247 U JPH0415247 U JP H0415247U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- utility
- electrically insulating
- registration request
- heat dissipating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 claims 1
- 238000005476 soldering Methods 0.000 description 1
Description
第１図はこの考案の一実施例による半導体装置
のダイボンド後の状態を示す断面図、第２図は従
来の半導体レーザ装置のダイボンド後の状態を示
す断面図である。
図において、１はＬＤチツプ、２はＡｌＮサブ
マウント、３はＭｏブロツク、４，５は半田剤で
ある。なお、各図中の同一符号は同一または相当
部分を示す。
FIG. 1 is a sectional view showing the state of a semiconductor device according to an embodiment of the invention after die bonding, and FIG. 2 is a sectional view showing the state of a conventional semiconductor laser device after die bonding. In the figure, 1 is an LD chip, 2 is an AlN submount, 3 is a Mo block, and 4 and 5 are soldering agents. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ルミニウムからなる電気絶縁性のサブマウントを
介して放熱用のモリブデンブロツクに装着したこ
とを特徴とする半導体装置。 A semiconductor device characterized in that a semiconductor chip is mounted on a heat dissipating molybdenum block via an electrically insulating submount made of aluminum nitride as a thermal stress relaxation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5608590U JPH0415247U (en) | 1990-05-29 | 1990-05-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5608590U JPH0415247U (en) | 1990-05-29 | 1990-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0415247U true JPH0415247U (en) | 1992-02-06 |
Family
ID=31579600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5608590U Pending JPH0415247U (en) | 1990-05-29 | 1990-05-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0415247U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486538A (en) * | 1987-06-30 | 1989-03-31 | Sumitomo Electric Industries | Member for semiconductor device |
-
1990
- 1990-05-29 JP JP5608590U patent/JPH0415247U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6486538A (en) * | 1987-06-30 | 1989-03-31 | Sumitomo Electric Industries | Member for semiconductor device |