JPH0418428U - - Google Patents
Info
- Publication number
- JPH0418428U JPH0418428U JP5834990U JP5834990U JPH0418428U JP H0418428 U JPH0418428 U JP H0418428U JP 5834990 U JP5834990 U JP 5834990U JP 5834990 U JP5834990 U JP 5834990U JP H0418428 U JPH0418428 U JP H0418428U
- Authority
- JP
- Japan
- Prior art keywords
- gas introduction
- wafer
- introduction nozzle
- cvd apparatus
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 8
- 238000001816 cooling Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 2
Description
第１図は本考案装置の第１実施例の構成を示す
概略断面図、第２図は本考案におけるガス導入ノ
ズルの斜視図、第３図ａ，ｂは本考案における噴
出面積の変更板の２例を示す斜視図、第４図は本
考案装置の第２実施例の構成を示す概略断面図、
第５図は本考案におけるガス導入ノズルに遮蔽板
を設けた場合の斜視図、第６図は従来装置の一例
の構成を示す簡略断面図である。
１……サセプタ、２……ウエーハ、３……ガス
導入ノズル、４……小径噴出孔、５……噴出面積
の変更板、６……遮蔽板、７……チヤンバ、１０
……加熱源（ヒータ、加熱用ランプ）。
Figure 1 is a schematic sectional view showing the structure of the first embodiment of the device of the present invention, Figure 2 is a perspective view of the gas introduction nozzle of the present invention, and Figures 3a and b are of the ejection area changing plate of the present invention. A perspective view showing two examples; FIG. 4 is a schematic sectional view showing the configuration of a second example of the device of the present invention;
FIG. 5 is a perspective view of the gas introduction nozzle according to the present invention provided with a shielding plate, and FIG. 6 is a simplified sectional view showing the configuration of an example of a conventional device. DESCRIPTION OF SYMBOLS 1... Susceptor, 2... Wafer, 3... Gas introduction nozzle, 4... Small diameter ejection hole, 5... Ejection area changing plate, 6... Shielding plate, 7... Chamber, 10
...Heating source (heater, heating lamp).
Claims (1)
ガスを噴出させてサセプタ１上の加熱されたウエ
ーハ２にＣＶＤ膜を生成する枚葉型ＣＶＤ装置に
おいて、サセプタ１上のウエーハ２の真上にガス
導入ノズル３を設置し、このガス導入ノズル３の
下面部に多数の小径噴出孔４を設けてなる枚葉型
ＣＶＤ装置。 (2) チヤンバ７にガス導入ノズル３を上下移動
可能に設けてなる請求項第(1)項記載の枚葉型Ｃ
ＶＤ装置。 (3) ガス導入ノズル３内の下面部上に噴出面積
の変更板５を配置せしめてなる請求項第(1)項、
第(2)項のいずれかに記載の枚葉型ＣＶＤ装置。 (4) ガス導入ノズル３とサセプタ１上のウエー
ハ２との間に遮蔽板６を設置せしめてなる請求項
第(1)項〜第(3)項のいずれかに記載の枚葉型ＣＶ
Ｄ装置。 (5) 遮蔽板６はガス導入ノズル３に上下移動可
能に設けられている請求項第(4)項記載の枚葉型
ＣＶＤ装置。 (6) ガス導入ノズル３、遮蔽板６及びチヤンバ
７に冷却手段を設けてなる請求項第(1)項〜第(5)
項のいずれかに記載の枚葉型ＣＶＤ装置。[Scope of Claim for Utility Model Registration] (1) In a single-wafer type CVD apparatus that generates a CVD film on a heated wafer 2 on a susceptor 1 by ejecting a reaction gas from a gas introduction nozzle 3 into a chamber 7, the susceptor 1 This is a single-wafer type CVD apparatus in which a gas introduction nozzle 3 is installed directly above the upper wafer 2, and a large number of small-diameter ejection holes 4 are provided on the lower surface of the gas introduction nozzle 3. (2) Single-wafer type C according to claim (1), wherein the gas introduction nozzle 3 is provided in the chamber 7 so as to be movable up and down.
VD device. (3) Claim (1), wherein the ejection area changing plate 5 is disposed on the lower surface of the gas introduction nozzle 3;
The single-wafer CVD apparatus according to any one of paragraph (2). (4) The single-wafer type CV according to any one of claims (1) to (3), wherein a shielding plate 6 is installed between the gas introduction nozzle 3 and the wafer 2 on the susceptor 1.
D device. (5) The single-wafer type CVD apparatus according to claim (4), wherein the shielding plate 6 is provided on the gas introduction nozzle 3 so as to be movable up and down. (6) Claims (1) to (5), wherein the gas introduction nozzle 3, the shielding plate 6, and the chamber 7 are provided with cooling means.
The single-wafer CVD apparatus according to any one of Items 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5834990U JPH0418428U (en) | 1990-06-01 | 1990-06-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5834990U JPH0418428U (en) | 1990-06-01 | 1990-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0418428U true JPH0418428U (en) | 1992-02-17 |
Family
ID=31583880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5834990U Pending JPH0418428U (en) | 1990-06-01 | 1990-06-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0418428U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936050A (en) * | 1995-07-25 | 1997-02-07 | Mitsubishi Electric Corp | Atmospheric pressure CVD equipment |
-
1990
- 1990-06-01 JP JP5834990U patent/JPH0418428U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936050A (en) * | 1995-07-25 | 1997-02-07 | Mitsubishi Electric Corp | Atmospheric pressure CVD equipment |
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