JPH04192535A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH04192535A
JPH04192535A JP2321288A JP32128890A JPH04192535A JP H04192535 A JPH04192535 A JP H04192535A JP 2321288 A JP2321288 A JP 2321288A JP 32128890 A JP32128890 A JP 32128890A JP H04192535 A JPH04192535 A JP H04192535A
Authority
JP
Japan
Prior art keywords
contact pad
burn
semiconductor device
test
test contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2321288A
Other languages
Japanese (ja)
Inventor
Tsutomu Yoshizaki
吉崎 勉
Kazuhiro Tashiro
一宏 田代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2321288A priority Critical patent/JPH04192535A/en
Publication of JPH04192535A publication Critical patent/JPH04192535A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863Contacting devices, e.g. sockets, burn-in boards or mounting fixtures

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enhance the accuracy of property test by installing a property test contact pad between a semiconductor device of a lead wire and a burn-in test contact pad. CONSTITUTION:A property test contact pad 22 is installed between a semiconductor device of a lead wire 21 and a burn-in test contact pad 22. In this manner, the property test contact pad 23 is installed between the semiconductor device and the burn-in test contact pad 22, which forces the property test contact pad 23 to approach the semiconductor device, which results in the reduction in the length of the lead wire. As a result, the inductance is lowered. This construction makes it possible to measure the property test contact pad 23 with higher accuracy than the burn-in test contact pad, thereby enhancing measurement accuracy.

Description

【発明の詳細な説明】 〔概 要〕 テープキャリア方式により製造される半導体装置に関し
、 特性試験の精度向上を可能とすることを目的とし、 テープキャリア方式で組立てられ、且つフィルム周辺部
に、該フィルム上に搭載された半導体素子からのリード
線に接続してバーンイン試験用の −コンタクトパント
が設けられた半導体装置において、上記リード線の、半
導体素子とバーンイン試験用のコンタクトパッドドとの
間に特性試験用のコンタクトパッドを設けて成るように
構成する。
[Detailed Description of the Invention] [Summary] With regard to semiconductor devices manufactured by the tape carrier method, the purpose of this invention is to improve the accuracy of characteristic tests. In a semiconductor device in which a contact punt is provided for burn-in testing by connecting to a lead wire from a semiconductor element mounted on a film, a contact punt is provided between the semiconductor element and a contact pad for burn-in testing of the lead wire. It is configured to include contact pads for characteristic testing.

〔産業上の利用分野] 本発明はテープキャリア(TAB)方式により製造され
る半導体装置に関する。
[Industrial Application Field] The present invention relates to a semiconductor device manufactured by a tape carrier (TAB) method.

近年半導体装置の高速化、多ビン化、リードピッチの微
細化に伴い半導体装置の特性試験をするうえで、半導体
素子から試験用パッドまでのパターンの、インダクタン
スの影響を小さくするために、半導体素子から試験用パ
ッドまでの距離を短かくする要求がある。また高温試験
であるハーンイン試験においては、従来の技術で容易に
コンタクトできることが要求されている。
In recent years, as semiconductor devices have become faster, have more bins, and have smaller lead pitches, when testing the characteristics of semiconductor devices, it is necessary to There is a demand for shortening the distance from the test pad to the test pad. Furthermore, in the Hearn-in test, which is a high-temperature test, it is required that contact can be easily made using conventional techniques.

[従来の技術] テープキャリア方式は半導体装置の自動組立を目的とし
て開発されたもので第3図はその製造工程を示す図であ
る。これは、第3図(a)に示すように長尺のスプロケ
ット孔付ポリイミドフィルム1に半導体素子搭載用の孔
2と外部リード用の孔3とを穿設し、次に第3図(b)
に示すようにフィルム1上に銅箔4をはり付ける。次に
第3図(C)に示すようにフォトエツチングによりリー
ド線5を形成し、該リード線にSnめっきした後、第3
図(d)に示すようにAuバンプ6をもった半導体素子
7をリード線5にAu  Sn共晶ボンディングする。
[Prior Art] The tape carrier method was developed for the purpose of automatically assembling semiconductor devices, and FIG. 3 is a diagram showing its manufacturing process. As shown in Fig. 3(a), holes 2 for mounting semiconductor elements and holes 3 for external leads are bored in a long polyimide film 1 with sprocket holes, and then holes 2 for mounting semiconductor elements and holes 3 for external leads are made in a long polyimide film 1 with sprocket holes. )
Copper foil 4 is pasted onto film 1 as shown in FIG. Next, as shown in FIG. 3(C), a lead wire 5 is formed by photoetching, and after Sn plating is applied to the lead wire, a third
As shown in Figure (d), a semiconductor element 7 having Au bumps 6 is bonded to lead wires 5 by Au-Sn eutectic bonding.

その後A−A線及びB−B線から切断し、第4図(a)
に示すような半導体装置とし、さらに特性試験、バーン
イン試験等を行なって出荷される。
After that, cut from the A-A line and the B-B line, as shown in Fig. 4(a).
The semiconductor device shown in FIG. 1 is made into a semiconductor device, and is further subjected to characteristic tests, burn-in tests, etc. before being shipped.

バーンイン試験は、第5図に示すような装置で行なわれ
ている。同図において、10は操作パ名ル部、11は恒
温部、12はドライバ一部、13 、13’は換気用ダ
クトである。恒温槽部11には複数枚のバーンインボー
ド14が収容され、中継ボード部15及びマザーボード
部16を介してドライバ一部12に接続されている。バ
ーンインボード14は第6図に示すようにプリント板1
7に多数のソケット18が搭載され、該ソケットに前記
第4図(a)に示した半導体装置が収容される。この半
導体装置には第4図(a)(b)に示すように前記バー
ンインボードのソケット18の接触子に接触するコンタ
クトパッド19が接触面を大きくとれるようにリード線
5を延長しフィルムの周辺部に設けられている。またこ
のパッド19は特性試験にも共用されている。
The burn-in test is conducted using an apparatus as shown in FIG. In the figure, 10 is an operating panel part, 11 is a constant temperature part, 12 is a part of a driver, and 13 and 13' are ventilation ducts. A plurality of burn-in boards 14 are housed in the constant temperature oven section 11 and connected to the driver part 12 via a relay board section 15 and a motherboard section 16 . The burn-in board 14 is a printed board 1 as shown in FIG.
A large number of sockets 18 are mounted on 7, and the semiconductor devices shown in FIG. 4(a) are housed in the sockets. As shown in FIGS. 4(a) and 4(b), in this semiconductor device, the lead wires 5 are extended around the film so that the contact pads 19 that come into contact with the contacts of the sockets 18 of the burn-in board can have a large contact surface. It is located in the department. This pad 19 is also used for characteristic testing.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来の半導体装置では、コンタクトパッド19はバ
ーンインボード上のソケット18のコンタクトのピッチ
に合わせ、且つ接触面積を大きくとるため第4図(a)
に示した様に半導体素子7から遠く離れてフィルム1の
周辺部に設けられている。
In the conventional semiconductor device described above, the contact pads 19 are arranged to match the pitch of the contacts of the socket 18 on the burn-in board and to ensure a large contact area, as shown in FIG. 4(a).
As shown in FIG. 2, it is provided at the periphery of the film 1 far away from the semiconductor element 7.

このためリード線5が長くなり、インダクタンスが高く
なる。このため高速化された半導体素子の特性試験に上
記コンタクトパッド19を用いることは正確な特性が得
られないことになる。
Therefore, the lead wire 5 becomes longer and the inductance becomes higher. Therefore, if the contact pad 19 is used to test the characteristics of a high-speed semiconductor device, accurate characteristics cannot be obtained.

本発明は上記従来の問題点に鑑み、特性試験の精度向上
を可能としたテープキャリア方式の半導体装置を提供す
ることを目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, it is an object of the present invention to provide a tape carrier type semiconductor device that enables improved accuracy in characteristic testing.

[課題を解決するための手段] 上記目的を達成するために本発明の半導体装置では、テ
ープキャリア方式で組立てられ、且つフィルム20の周
辺部に、該フィルム20上に搭載された半導体素子から
のリード線21に接続してバーンイン試験用のコンタク
トパッド22が設けられた半導体装置において、上記リ
ード線21の、半導体素子とバーンイン試験用のコンタ
クトパッド22との間に特性試験用のコンタクトパッド
23を設けて成ることを特徴とする。
[Means for Solving the Problems] In order to achieve the above object, the semiconductor device of the present invention is assembled using a tape carrier method, and a semiconductor device mounted on the film 20 is assembled at the periphery of the film 20. In a semiconductor device in which a contact pad 22 for a burn-in test is provided connected to a lead wire 21, a contact pad 23 for a characteristic test is provided between the semiconductor element of the lead wire 21 and the contact pad 22 for a burn-in test. It is characterized by being provided with.

〔作 用〕[For production]

半導体素子とバーンイン試験用コンタクトパッド22と
の中間に特性試験様のコンタクトパッド23を設けるこ
とにより、該特性試験用コンタクトパッド23は半導体
素子に近くなり、その間のリード線の長さは短かくなる
ため、インダクタンスは低くなる。これにより、特性試
験はバーンイン試験用コンタクトパッド22を用いるよ
りも特性試験用コンタクトパッド23を用いる方が測定
精度は向上する。
By providing a contact pad 23 for characteristic testing between the semiconductor element and the contact pad 22 for burn-in testing, the contact pad 23 for characteristic testing becomes close to the semiconductor element, and the length of the lead wire between them becomes short. Therefore, the inductance becomes low. As a result, the measurement accuracy is improved when the characteristic test uses the characteristic test contact pad 23 rather than when the burn-in test contact pad 22 is used.

〔実施例] 第1図は本発明の実施例の要部を示す図である。〔Example] FIG. 1 is a diagram showing essential parts of an embodiment of the present invention.

同図において、20はフィルムで図示なき半導体素子が
搭載されている。21は該半導体素子に接続してフィル
ム20上に設けられたリード線であり、該リード線21
の先端には、該リード線に接続したバーンイン試験用の
コンタクトパッド22がフィルム20の周辺部に配設さ
れている。23は本発明の要点である特性試験用コンタ
クトパッドであり、図示なき半導体素子とバーンイン試
験用のコンタクトパッド22との中間に設けられている
。なおこの特性試験用のコンタクトパッド23は、特性
試験機の接触ビンが接触可能な範囲で、なるべく半導体
素子に近い方が良い。またこの特性試験用コンタクトパ
ッド23の形状はバーンイン試験用のコンタクトパッド
22より小さく、且つ第2図(a)〜(d)の如く、丸
形、角形、ダ円等何れでも良い。
In the figure, 20 is a film on which a semiconductor element (not shown) is mounted. 21 is a lead wire connected to the semiconductor element and provided on the film 20;
At the tip of the film 20, a contact pad 22 for burn-in testing connected to the lead wire is arranged around the periphery of the film 20. Reference numeral 23 denotes a contact pad for characteristic testing, which is the main point of the present invention, and is provided between the semiconductor element (not shown) and the contact pad 22 for burn-in testing. It is preferable that the contact pad 23 for this characteristic test be as close to the semiconductor element as possible within a range where it can be contacted by the contact bottle of the characteristic tester. The shape of the contact pad 23 for characteristic testing is smaller than the contact pad 22 for burn-in testing, and may be round, square, round, etc. as shown in FIGS. 2(a) to 2(d).

以上のように構成された本実施例は、特性試験用のコン
タクトパッドを半導体素子に近づけることで特性試験の
精度を向上することができ、またバーンイン試験用コン
タクトパッドを従来と同様な位置に設けることにより、
従来のバーンインボードのソケットを従来通り用いるこ
とができる。
In this embodiment configured as described above, the accuracy of the characteristic test can be improved by bringing the contact pad for the characteristic test closer to the semiconductor element, and the contact pad for the burn-in test is provided at the same position as before. By this,
Conventional burn-in board sockets can be used as usual.

なお第1図に示す特性試験用のコンタクトパッド23の
ピッチは0.4〜0.5 mmより更に微細ピッチ化に
対応も可能である。
The pitch of the contact pads 23 for characteristic testing shown in FIG. 1 can be made even finer than 0.4 to 0.5 mm.

〔発明の効果〕〔Effect of the invention〕

以上説明した様に、本発明によれば、バーンイン試験用
のコンタクトパッドとは別ユニ特性試験用のコンタクト
パッドを設けることにより、該特性試験用のコンタクト
パッドを半導体素子に近づけることができ、リード線の
インダクタンスを低くできる。これにより特性試験の測
定精度を向上することができる。またバーンイン試験は
従来のバーンインボードで行なうことが可能で、その安
価なソケットで対応でき、製造コストの上昇を抑えるこ
とができる。
As explained above, according to the present invention, by providing a contact pad for a uni-characteristic test separate from a contact pad for a burn-in test, the contact pad for the characteristic test can be brought closer to the semiconductor element, and Wire inductance can be lowered. This makes it possible to improve the measurement accuracy of characteristic tests. In addition, burn-in tests can be performed using conventional burn-in boards, which can be used with inexpensive sockets, and increases in manufacturing costs can be suppressed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例の要部を示す図、第2図は本発
明の実施例に用いる特性試験用のコンタクトパッドの形
状例を示す図、 第3図は従来のテープキャリア方式を説明するための図
、 第4図は従来のテープキャリア方式で組立てられた半導
体装置を示す図、 第5図は従来のバーンイン装置を示す図、第6図は従来
のバーンイン試験装置用のバーンインボードを示す図で
ある。 図において、 20はフィルム、 21はリード線、 22はバーンイン試験用のコンタクドパ・ンド、23は
特性試験用のコンタクトパッド を示す。
Fig. 1 is a diagram showing the main part of an embodiment of the present invention, Fig. 2 is a diagram showing an example of the shape of a contact pad for characteristic testing used in an embodiment of the present invention, and Fig. 3 is a diagram showing a conventional tape carrier method. Figure 4 is a diagram showing a semiconductor device assembled using a conventional tape carrier method; Figure 5 is a diagram showing a conventional burn-in equipment; Figure 6 is a burn-in board for a conventional burn-in test equipment. FIG. In the figure, 20 is a film, 21 is a lead wire, 22 is a contact pad for a burn-in test, and 23 is a contact pad for a characteristic test.

Claims (1)

【特許請求の範囲】 1、テープキャリア方式で組立てられ、且つフィルム(
20)の周辺部に、該フィルム(20)上に搭載された
半導体素子からのリード線(21)に接続してバーンイ
ン試験用のコンタクトパッド(22)が設けられた半導
体装置において、 上記リード線(21)の、半導体素子とバーンイン試験
用のコンタクトパッド(22)との間に特性試験用のコ
ンタクトパッド(23)を設けて成ることを特徴とする
半導体装置。 2、請求項1記載の半導体装置において、特性試験用の
コンタクトパッド(23)の大きさはバーンイン試験用
のコンタクトパッド(22)より小さいことを特徴とす
る半導体装置。
[Claims] 1. Assembled by tape carrier method and film (
20), in which a contact pad (22) for a burn-in test is provided on the periphery of the film (20), the contact pad (22) being connected to a lead wire (21) from a semiconductor element mounted on the film (20); A semiconductor device according to (21), characterized in that a contact pad (23) for a characteristic test is provided between a semiconductor element and a contact pad (22) for a burn-in test. 2. The semiconductor device according to claim 1, wherein the contact pad (23) for characteristic testing is smaller in size than the contact pad (22) for burn-in testing.
JP2321288A 1990-11-27 1990-11-27 Semiconductor device Pending JPH04192535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2321288A JPH04192535A (en) 1990-11-27 1990-11-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2321288A JPH04192535A (en) 1990-11-27 1990-11-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH04192535A true JPH04192535A (en) 1992-07-10

Family

ID=18130896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2321288A Pending JPH04192535A (en) 1990-11-27 1990-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH04192535A (en)

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