JPH0430730U - - Google Patents

Info

Publication number
JPH0430730U
JPH0430730U JP7250590U JP7250590U JPH0430730U JP H0430730 U JPH0430730 U JP H0430730U JP 7250590 U JP7250590 U JP 7250590U JP 7250590 U JP7250590 U JP 7250590U JP H0430730 U JPH0430730 U JP H0430730U
Authority
JP
Japan
Prior art keywords
wiring
semiconductor integrated
integrated circuit
chip
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7250590U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7250590U priority Critical patent/JPH0430730U/ja
Publication of JPH0430730U publication Critical patent/JPH0430730U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例である半導体集積
回路の平面図、第2図、第3図はこの考案の他の
実施例を示す半導体集積回路の平面図、第4図は
この考案によつて得られた中間配線層の等価回路
の回路図、第5図、第6図はクロストーク現象を
説明するための説明図、第7図は従来の半導体集
積回路の平面図である。 図において、1は半導体集積回路チツプ、2は
周辺端子、3は電源端子、4は接地端子、5はバ
ツフア回路セル、6は内部回路レイアウトパター
ン、7は上層配線、10は中間配線層を示す。な
お、図中、同一符号は同一、又は相当部分を示す
Fig. 1 is a plan view of a semiconductor integrated circuit that is an embodiment of this invention, Figs. 2 and 3 are plan views of a semiconductor integrated circuit that shows other embodiments of this invention, and Fig. 4 is a plan view of a semiconductor integrated circuit that is an embodiment of this invention. 5 and 6 are explanatory diagrams for explaining the crosstalk phenomenon, and FIG. 7 is a plan view of a conventional semiconductor integrated circuit. In the figure, 1 is a semiconductor integrated circuit chip, 2 is a peripheral terminal, 3 is a power supply terminal, 4 is a ground terminal, 5 is a buffer circuit cell, 6 is an internal circuit layout pattern, 7 is an upper layer wiring, and 10 is an intermediate wiring layer. . In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

補正 平2.11.6 実用新案登録請求の範囲を次のように補正する
Amendment 2.11.6. The scope of claims for utility model registration is amended as follows.

【実用新案登録請求の範囲】 半導体集積回路チツプの外部より半導体集積回
路チツプの周辺端子部分を経由し、バツフア回路
を介さないで直接多層配線における上層配線層を
用いて、チツプ内部の回路まで配線される、ある
いは半導体集積回路チツプ上を通り抜け他の辺
るいは同一辺
の周辺端子まで配線される場合、そ
の配線の下層に存在する各種素子あるいは配線と
の間に必らず電源電位あるいは接地電位が印加さ
れた中間層配線を設けた部分を少なくとも含んだ
ことを特徴とする半導体集積回路。
[Claim for Utility Model Registration] Wiring from the outside of the semiconductor integrated circuit chip via the peripheral terminals of the semiconductor integrated circuit chip, directly to the circuit inside the chip using the upper wiring layer of multilayer wiring without going through a buffer circuit. When the wiring is routed through a semiconductor integrated circuit chip to a peripheral terminal on another side or on the same side , there must be gaps between the wiring and the various elements or wiring that exist in the underlying layer. A semiconductor integrated circuit comprising at least a portion provided with an intermediate layer wiring to which a power supply potential or a ground potential is applied.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体集積回路チツプの外部より半導体集積回
路チツプの周辺端子部分を経由し、バツフア回路
を介さないで直接多層配線における上層配線層を
用いて、チツプ内部の回路まで配線される、ある
いは半導体集積回路チツプ上を通り抜け他の辺の
周辺端子まで配線される場合、その配線の下層に
存在する各種素子あるいは配線との間に必らず電
源電位あるいは接地電位が印加された中間層配線
を設けた部分を少なくとも含んだことを特徴とす
る半導体集積回路。
Wiring is performed from outside the semiconductor integrated circuit chip via the peripheral terminals of the semiconductor integrated circuit chip, directly to the internal circuitry of the chip using the upper wiring layer of the multilayer wiring without going through a buffer circuit, or to the circuit inside the chip. When wiring passes through the top and reaches peripheral terminals on other sides, there must be an intermediate layer wiring to which a power supply potential or ground potential is applied between the wiring and various elements or wiring existing in the layer below the wiring. A semiconductor integrated circuit characterized by comprising at least:
JP7250590U 1990-07-05 1990-07-05 Pending JPH0430730U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7250590U JPH0430730U (en) 1990-07-05 1990-07-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7250590U JPH0430730U (en) 1990-07-05 1990-07-05

Publications (1)

Publication Number Publication Date
JPH0430730U true JPH0430730U (en) 1992-03-12

Family

ID=31610498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7250590U Pending JPH0430730U (en) 1990-07-05 1990-07-05

Country Status (1)

Country Link
JP (1) JPH0430730U (en)

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