JPH0448628U - - Google Patents
Info
- Publication number
- JPH0448628U JPH0448628U JP1990091340U JP9134090U JPH0448628U JP H0448628 U JPH0448628 U JP H0448628U JP 1990091340 U JP1990091340 U JP 1990091340U JP 9134090 U JP9134090 U JP 9134090U JP H0448628 U JPH0448628 U JP H0448628U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- lead type
- thin metal
- inner lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/701—Tape-automated bond [TAB] connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
Landscapes
- Wire Bonding (AREA)
Description
第１図は本考案の実施例を示す側断面図、第２
図は第１図半導体装置の要部断面斜視図、第３図
および第５図は本考案の他の実施例を示す要部側
断面図、第４図は第３図実施例のバンプ電極の製
造方法を示す側断面図、第６図はＴＡＢリード型
半導体装置の一例を示す側断面図である。
３ａ……インナリード、４……半導体ペレツト
、４ｂ……バンプ電極、５……金属細線。
Fig. 1 is a side sectional view showing an embodiment of the present invention;
1 is a sectional perspective view of the main part of the semiconductor device, FIGS. 3 and 5 are side sectional views of the main part showing other embodiments of the present invention, and FIG. 4 is a bump electrode of the embodiment shown in FIG. FIG. 6 is a side sectional view showing an example of a TAB lead type semiconductor device. 3a...inner lead, 4...semiconductor pellet, 4b...bump electrode, 5...metal thin wire.
Claims (1)
導電箔よりなるインナリードとを圧着接続したＴ
ＡＢリード型半導体装置において、 上記バンプ電極をインナリードの延長方向に細
長く形成したことを特徴とするＴＡＢリード型半
導体装置。 (2) バンプ電極が金属細線をステツチボンデイ
ングして形成されたことを特徴とする実用新案登
録請求の範囲第１項記載のＴＡＢリード型半導体
装置。 (3) ステツチボンデイングされた金属細線の終
端位置がインナリードの遊端側に位置しているこ
とを特徴とする実用新案登録請求の範囲第２項記
載のＴＡＢリード型半導体装置。 (4) バンプ電極が金属細線の一端をボールボン
テイングしたことを特徴とする実用新案登録請求
の範囲第２項記載のＴＡＢリード型半導体装置。 (5) ボールボンデイング位置がインナリードの
遊端より内方に位置していることを特徴とする実
用新案登録請求の範囲第４項記載のＴＡＢリード
型半導体装置。[Claims for Utility Model Registration] (1) A T in which a bump electrode formed on a semiconductor pellet and an inner lead made of conductive foil are connected by pressure bonding.
AB lead type semiconductor device, characterized in that the bump electrode is formed to be elongated in the direction of extension of the inner lead. (2) The TAB lead type semiconductor device according to claim 1, wherein the bump electrodes are formed by stitch bonding thin metal wires. (3) The TAB lead type semiconductor device according to claim 2, wherein the terminal end of the stitch-bonded thin metal wire is located on the free end side of the inner lead. (4) The TAB lead type semiconductor device according to claim 2, wherein the bump electrode is formed by ball bonding one end of a thin metal wire. (5) The TAB lead type semiconductor device according to claim 4, wherein the ball bonding position is located inward from the free end of the inner lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990091340U JPH0448628U (en) | 1990-08-30 | 1990-08-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990091340U JPH0448628U (en) | 1990-08-30 | 1990-08-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448628U true JPH0448628U (en) | 1992-04-24 |
Family
ID=31826866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990091340U Pending JPH0448628U (en) | 1990-08-30 | 1990-08-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448628U (en) |
-
1990
- 1990-08-30 JP JP1990091340U patent/JPH0448628U/ja active Pending
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