JPH0448645U - - Google Patents
Info
- Publication number
- JPH0448645U JPH0448645U JP9175490U JP9175490U JPH0448645U JP H0448645 U JPH0448645 U JP H0448645U JP 9175490 U JP9175490 U JP 9175490U JP 9175490 U JP9175490 U JP 9175490U JP H0448645 U JPH0448645 U JP H0448645U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- diac
- impurity layer
- highly concentrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案に係るダイアツクの実施例を示
す側断面図、第２図は従来のダイアツクの一具体
例を示す側断面図、第３図はダイアツクの電圧一
電流特性図である。
１……半導体基板、２ａ，２ｂ……高濃度他導
電型不純物層、７ａ，７ｂ……高濃度一導電型不
純物層。
FIG. 1 is a side sectional view showing an embodiment of a diac according to the present invention, FIG. 2 is a side sectional view showing a specific example of a conventional diac, and FIG. 3 is a voltage-current characteristic diagram of the diac. 1... Semiconductor substrate, 2a, 2b... High concentration impurity layer of other conductivity type, 7a, 7b... High concentration impurity layer of one conductivity type.
Claims (1)
より高濃度他導電型不純物を対称に選択拡散して
なるダイアツクにおいて、 上記他導電型不純物層の各周辺で少なくとも基
板表面付近に高濃度一導電型不純物層を形成した
ことを特徴とするダイアツク。[Claims for Utility Model Registration] In a diac formed by symmetrically selectively diffusing highly concentrated impurities of a different conductivity type from each of the front and back surfaces of a low concentration semiconductor substrate of one conductivity type, at least the substrate at each periphery of the impurity layer of the other conductivity type. A diac characterized by a highly concentrated one-conductivity type impurity layer formed near the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175490U JPH0448645U (en) | 1990-08-31 | 1990-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9175490U JPH0448645U (en) | 1990-08-31 | 1990-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0448645U true JPH0448645U (en) | 1992-04-24 |
Family
ID=31827664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9175490U Pending JPH0448645U (en) | 1990-08-31 | 1990-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0448645U (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102378A (en) * | 1986-10-20 | 1988-05-07 | Matsushita Electronics Corp | Diode for preventing electrostatic breakdown |
| JPS6423577A (en) * | 1987-07-20 | 1989-01-26 | Matsushita Electronics Corp | Diode for prevention of electrostatic breakdown |
| JPH0220354B2 (en) * | 1985-06-13 | 1990-05-09 | Kei Esu Emu Fuasuningu Shisutemusu Inc | |
| JPH02134873A (en) * | 1988-11-15 | 1990-05-23 | Nec Corp | Trigger diode |
| JPH03161976A (en) * | 1989-11-21 | 1991-07-11 | Nec Kansai Ltd | Planar type diac and its manufacturing method |
-
1990
- 1990-08-31 JP JP9175490U patent/JPH0448645U/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0220354B2 (en) * | 1985-06-13 | 1990-05-09 | Kei Esu Emu Fuasuningu Shisutemusu Inc | |
| JPS63102378A (en) * | 1986-10-20 | 1988-05-07 | Matsushita Electronics Corp | Diode for preventing electrostatic breakdown |
| JPS6423577A (en) * | 1987-07-20 | 1989-01-26 | Matsushita Electronics Corp | Diode for prevention of electrostatic breakdown |
| JPH02134873A (en) * | 1988-11-15 | 1990-05-23 | Nec Corp | Trigger diode |
| JPH03161976A (en) * | 1989-11-21 | 1991-07-11 | Nec Kansai Ltd | Planar type diac and its manufacturing method |