JPH0451511A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor integrated circuit device, which decreases the slippages during the composition of drawings by providing each function cell with patterns for detecting the dislocation at the time of compositing the drawings of a plurality of function cells. CONSTITUTION:Each photomask is constituted of a function cell 1, 2, 3, or 4. And in the function cell 1 are arranged patterns 5, 6, 7 and 8 for slippage ditection, and in the function cell 2 are arranged patterns 10 and 11 for slippage detection, and in the function cell 3 is arranged a pattern 12 for detection, and in the function cell 4 is arranged the one 13 for slippage detection.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask for manufacturing semiconductor integrated circuit devices.

[Summary of the invention]

The present invention includes a method for detecting deviations during drawing and synthesis of functional cells by providing a pattern for each functional cell to detect deviations during drawing and synthesis of functional cells in a photomask for manufacturing semiconductor integrated circuit devices. This is to keep the deviation during drawing and synthesis of functional cells using a photomask within an allowable range.

[Conventional technology]

FIG. 2 is a schematic diagram of a conventional photomask for manufacturing semiconductor integrated circuit devices. Conventionally, the pattern for detecting deviations when drawing and synthesizing functional cells has been used as a pattern for detecting drawing synthesis accuracy during gator drawing on a photomask, or as a pattern for visual confirmation of the data area of functional cells.
They were placed at the four corners of the data area of the functional cell. To determine the drawing synthesis accuracy, the positions of the detection pattern in the data before drawing on the photomask and the detection pattern in the photomask after drawing were measured, and the deviation was kept within an allowable range.

[Problem to be solved by the invention]

FIG. 2 is a schematic diagram of a photomask when the number of functional cells drawn on the photomask is one piece of data.

In FIG. 2, 21 is a functional cell constituting a photomask, and 25, 26, 27, and 28 are < turns arranged in the functional cell 21 for detecting deviation. The deviation detection patterns 25, 26, 27, and 28 can also be used to visually confirm the data area of the functional cell 21. In this case, the problem of large deviations occurring when drawing and synthesizing the functional cells was small, except that the deviations occurred within the allowable range.

Recently, in the semiconductor industry, there has been a remarkable development of large-scale circuits such as microprocessors with built-in semiconductor memory circuits (RAM, ROM, or circuits with similar functions) in order to provide products with higher added value. . These microprocessors include a large number of highly integrated memory circuits and control circuits that perform all kinds of arithmetic processing, and the number of circuit elements that make up the microprocessor is enormous. However, due to the limitations of the drawing device, 1. Such a large-scale circuit cannot be synthesized as a single functional cell before being drawn on a photomask. It was not possible to use the method shown in FIG.

The present invention is intended to solve these problems, and its purpose is to provide a semiconductor integrated circuit device that reduces deviations that occur during drawing and synthesis for all functional cells constituting a mask. It's there.

Means for Solving Problem L] The semiconductor integrated circuit device of the present invention has a plurality of functional cells that are drawn and synthesized on a photomask, and the deviation in drawing and synthesis of the plurality of functional cells is corrected for each functional cell. It is characterized by providing a pattern for detection.

〔Example〕

FIG. 1 is a schematic diagram of a photomask during drawing synthesis in an embodiment of the present invention, which has a plurality of functional cells and is provided with a pattern for detecting deviation during drawing synthesis on all the functional cells. be.

In order to solve the conventional problems, as in the present invention, a large-scale circuit is divided into multiple blocks, each block is assigned as a single functional cell, and each functional cell constituting the circuit is A pattern is provided to detect deviation. In this case, the data for the entire circuit is not synthesized until it is drawn on the photomask. A schematic diagram of a photomask obtained by drawing and combining these plurality of functional cells for one mask is shown in FIG. In FIG. 1, 1p2t5*4 each constitutes a photomask and has one functional cell, 5t6*7m B',
9 is a pattern for detecting deviation arranged in functional cell 1, 1
0.11 is a pattern for detecting deviation placed in functional cell 2, 12 is a pattern for detecting deviation placed in functional cell 6, and 16 is a pattern for detecting deviation placed in one functional cell 4. . The functional cells shown here are divided into parts according to the scale of the entire circuit, so it does not matter how many functional cells there may be. Although an L-shaped pattern is used in this embodiment, any shape may be used as long as it is convenient for detecting deviation. In addition, the number of patterns for detecting deviations placed in each functional cell is at least one, and it is possible to place more than one if necessary.Also, the number of patterns for detecting deviations placed in each functional cell is The direction of the pattern may be within a range that satisfies the design rules constituting the mask. Note that the pattern for detecting misalignment does not need to be placed on all photomasks required for semiconductor manufacturing;
It is also possible to simply place it on a photomask that requires high accuracy in drawing synthesis.

〔Effect of the invention〕

As described above, according to the invention, by providing a check mark for detecting deviations when drawing and synthesizing multiple functional cells for each functional cell divided according to the scale of the entire circuit, all functions can be This has the effect that the cell misalignment can be kept within an allowable range, and the accuracy of data insertion during photomask drawing synthesis can be improved. The number and position of patterns for detecting misalignment can be determined arbitrarily, so they should be placed near circuits where accuracy is more important (thereby, machining defects during photomask manufacturing may be the cause of defects during semiconductor manufacturing). This has the effect of improving the yield.In addition, by using a pattern that detects the misalignment of each functional cell, it is possible to visually confirm whether or not there is data for each functional cell. It also has the effect of being able to do so.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a photomask showing an embodiment of the present invention. FIG. 2 is a schematic diagram of a photomask showing a conventional example. 1 to 4--1.Functional cells 5 to 13 in which patterns for deviation detection are arranged--Patterns for deviation detection 21--Functional cells 25 to 28-Patterns for deviation detection No.

Claims (1)

[Claims] It has multiple functional cells that are drawn and synthesized on a photomask,
1. A semiconductor integrated circuit device, characterized in that each functional cell is provided with a pattern for detecting deviations when drawing and synthesizing a plurality of functional cells.