JPH0459942U - - Google Patents
Info
- Publication number
- JPH0459942U JPH0459942U JP10273190U JP10273190U JPH0459942U JP H0459942 U JPH0459942 U JP H0459942U JP 10273190 U JP10273190 U JP 10273190U JP 10273190 U JP10273190 U JP 10273190U JP H0459942 U JPH0459942 U JP H0459942U
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- probe
- substrate
- vacuum chamber
- electrical characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000000523 sample Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Description
第１図は本考案の集束イオンビーム装置の一例
を示す構成図である。
１……真空チヤンバ、１０……基板、１１……
液体金属イオン源、１２……引出し電極、１３ａ
，１３ｂ……静電型レンズ、１５……偏向電極、
１７……サンプルステージ、２２……プローブ、
２３……計測装置。
FIG. 1 is a configuration diagram showing an example of a focused ion beam device of the present invention. 1... Vacuum chamber, 10... Substrate, 11...
Liquid metal ion source, 12... Extraction electrode, 13a
, 13b... Electrostatic lens, 15... Deflection electrode,
17...sample stage, 22...probe,
23...Measuring device.
Claims (1)
イオンビームを集束して集束イオンビームを形成
する静電レンズと、イオンビームを偏向させるデ
フレクタと、イオンビーム加工の施される基板を
取り付けるサンプルステージと、これらを包囲す
る真空チヤンバから構成される集束イオンビーム
装置において、 前記真空チヤンバ内に、基板に設けられたデバ
イスの電気特性を計測するためのプローブと、前
記基板とプローブを接続するための機構を備え、
集束イオンビームによる加工ののち、真空チヤン
バ内でデバイスの電気特性を計測し得るようにし
たことを特徴とする集束イオンビーム装置。[Claim for Utility Model Registration] A liquid metal ion source, an electrostatic lens that focuses the ion beam from the liquid metal ion source to form a focused ion beam, a deflector that deflects the ion beam, and an ion beam processing device. A focused ion beam device comprising a sample stage on which a substrate to be processed is attached, and a vacuum chamber surrounding the sample stage, wherein a probe for measuring the electrical characteristics of a device provided on the substrate is placed in the vacuum chamber, and a probe for measuring the electrical characteristics of a device provided on the substrate; Equipped with a mechanism for connecting the probe to
A focused ion beam apparatus characterized in that the electrical characteristics of a device can be measured in a vacuum chamber after processing using a focused ion beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10273190U JPH0459942U (en) | 1990-09-28 | 1990-09-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10273190U JPH0459942U (en) | 1990-09-28 | 1990-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0459942U true JPH0459942U (en) | 1992-05-22 |
Family
ID=31847229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10273190U Pending JPH0459942U (en) | 1990-09-28 | 1990-09-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0459942U (en) |
-
1990
- 1990-09-28 JP JP10273190U patent/JPH0459942U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0314763A1 (en) | SECONDARY ELECTRON DETECTOR FOR USE IN A GAS ENVIRONMENT. | |
| JPH0459942U (en) | ||
| TW306033B (en) | Method of removing charge effect and thermal damage of charged particle microscope | |
| JPH01221637A (en) | Observed sample processing method | |
| JPS63175325A (en) | Charged particle detecting device | |
| JPS5252562A (en) | Electron beam scanning type sample image pick-up device | |
| JPS62226552A (en) | Scanning electron microscope | |
| JPH02102651U (en) | ||
| JPS5988857U (en) | Charged beam measuring device | |
| JPH02106455U (en) | ||
| JPH0178023U (en) | ||
| JP2024173322A (en) | Observation device and observation method | |
| JPH0475952U (en) | ||
| JP2838177B2 (en) | Ion milling method and apparatus | |
| JPH0459049U (en) | ||
| JPH0297744U (en) | ||
| JPS559407A (en) | Sampling table for scanning electron microscope etc | |
| JPH0379156U (en) | ||
| JPS6073163U (en) | scanning electron microscope | |
| JPS61167362U (en) | ||
| JPS6296256U (en) | ||
| JPH0528945A (en) | Surface observation sample table | |
| JPS614348U (en) | Cathodoluminescence device | |
| JPS5966853U (en) | Electron beam scanning analyzer for both area and angle scanning | |
| JPS6119774U (en) | Potential measurement device using a scanning electron microscope |