JPH0467330U - - Google Patents
Info
- Publication number
- JPH0467330U JPH0467330U JP11062890U JP11062890U JPH0467330U JP H0467330 U JPH0467330 U JP H0467330U JP 11062890 U JP11062890 U JP 11062890U JP 11062890 U JP11062890 U JP 11062890U JP H0467330 U JPH0467330 U JP H0467330U
- Authority
- JP
- Japan
- Prior art keywords
- parts
- wiring
- electrode parts
- electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の半導体装置の一実施例である
２層配線ＬＳＩの一例を示す部分拡大断面図、第
２図は第１図の２層配線ＬＳＩの製造プロセスを
説明する図、第３図は従来の２層配線ＬＳＩの一
例を示す部分拡大断面図である。
１……２層配線ＬＳＩ（半導体装置）、２……
シリコン基板（半導体基板）、６……ゲート電極
部（電極部）、１２……配線部、１３……電極配
線部、１３ａ……ソース電極部（電極部）、１３
ｂ……配線部、１６……配線部。
1 is a partially enlarged sectional view showing an example of a two-layer wiring LSI which is an embodiment of the semiconductor device of the present invention; FIG. 2 is a diagram explaining the manufacturing process of the two-layer wiring LSI shown in FIG. 1; The figure is a partially enlarged sectional view showing an example of a conventional two-layer wiring LSI. 1...2-layer wiring LSI (semiconductor device), 2...
Silicon substrate (semiconductor substrate), 6... Gate electrode part (electrode part), 12... Wiring part, 13... Electrode wiring part, 13a... Source electrode part (electrode part), 13
b... Wiring section, 16... Wiring section.
Claims (1)
部にそれぞれ接続された配線部とが形成された半
導体装置において、すべての前記電極部及び配線
部の材質がタングステンシリサイドであることを
特徴とする半導体装置。 A semiconductor device in which two or more electrode parts and wiring parts respectively connected to the electrode parts are formed on a semiconductor substrate, characterized in that the material of all the electrode parts and wiring parts is tungsten silicide. semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11062890U JPH0467330U (en) | 1990-10-23 | 1990-10-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11062890U JPH0467330U (en) | 1990-10-23 | 1990-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0467330U true JPH0467330U (en) | 1992-06-15 |
Family
ID=31857991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11062890U Pending JPH0467330U (en) | 1990-10-23 | 1990-10-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0467330U (en) |
-
1990
- 1990-10-23 JP JP11062890U patent/JPH0467330U/ja active Pending
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