JPH04735U - - Google Patents

Info

Publication number
JPH04735U
JPH04735U JP4130390U JP4130390U JPH04735U JP H04735 U JPH04735 U JP H04735U JP 4130390 U JP4130390 U JP 4130390U JP 4130390 U JP4130390 U JP 4130390U JP H04735 U JPH04735 U JP H04735U
Authority
JP
Japan
Prior art keywords
semiconductor crystal
crystal growth
substrate wafer
utility
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4130390U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4130390U priority Critical patent/JPH04735U/ja
Publication of JPH04735U publication Critical patent/JPH04735U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの考案の一実施例による半導体結晶
成長装置を示す断面側面図、第２図は従来の半導
体結晶成長装置を示す断面側面図である。 図において、１……スライダー、２……融液溜
、３……成長用融液、４……ＩｎＰ基板ウエハ、
５……ウエハホルダー、６……ピストン、７……
トンネル、８……ＩｎＰダミーウエハを示す。な
お、図中、同一符号は同一、または相当部分を示
す。 FIG. 1 is a cross-sectional side view showing a semiconductor crystal growth apparatus according to an embodiment of the invention, and FIG. 2 is a cross-sectional side view showing a conventional semiconductor crystal growth apparatus. In the figure, 1... slider, 2... melt reservoir, 3... melt for growth, 4... InP substrate wafer,
5... Wafer holder, 6... Piston, 7...
Tunnel, 8... InP dummy wafer is shown. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] カーボンボートを用いて液相エピタキシヤル成
長を行う半導体結晶成長装置において、基板ウエ
ハの両サイドにダミーウエハを設置する様にした
ことを特徴とする半導体結晶成長装置。 A semiconductor crystal growth apparatus for performing liquid phase epitaxial growth using a carbon boat, characterized in that dummy wafers are installed on both sides of a substrate wafer.
JP4130390U 1990-04-17 1990-04-17 Pending JPH04735U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4130390U JPH04735U (en) 1990-04-17 1990-04-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4130390U JPH04735U (en) 1990-04-17 1990-04-17

Publications (1)

Publication Number Publication Date
JPH04735U true JPH04735U (en) 1992-01-07

Family

ID=31551853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4130390U Pending JPH04735U (en) 1990-04-17 1990-04-17

Country Status (1)

Country Link
JP (1) JPH04735U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10596028B2 (en) 2009-07-26 2020-03-24 Forever Young International, Inc. Self-heated consumer spa products and applications thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10596028B2 (en) 2009-07-26 2020-03-24 Forever Young International, Inc. Self-heated consumer spa products and applications thereof

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