JPH048430U - - Google Patents
Info
- Publication number
- JPH048430U JPH048430U JP1990048498U JP4849890U JPH048430U JP H048430 U JPH048430 U JP H048430U JP 1990048498 U JP1990048498 U JP 1990048498U JP 4849890 U JP4849890 U JP 4849890U JP H048430 U JPH048430 U JP H048430U
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- phase growth
- growth apparatus
- component element
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図はこの考案の一実施例である半導体液相
成長装置を示す説明断面図、第２図はこの考案の
他の実施例を示す説明断面図、第３図は従来の半
導体液相成長装置を示す説明断面図、第４図は従
来の半導体液相成長装置を使用して薄膜を成長し
た場合の成長順簿膜番号とλｃの関係を示した図
である。図中、１は電気炉、２は反応管、３はス
ライドボート、４は基板、５はメルト、６はＨｇ
Ｔｅ、７はリザーバを示す。なお、図中、同一符
号は同一、又は相当部分を示す。
Fig. 1 is an explanatory sectional view showing a semiconductor liquid phase growth apparatus which is an embodiment of this invention, Fig. 2 is an explanatory sectional view showing another embodiment of this invention, and Fig. 3 is an explanatory sectional view showing a semiconductor liquid phase growth apparatus which is an embodiment of this invention. FIG. 4, an explanatory cross-sectional view showing the apparatus, is a diagram showing the relationship between the growth order film number and λc when a thin film is grown using a conventional semiconductor liquid phase growth apparatus. In the figure, 1 is an electric furnace, 2 is a reaction tube, 3 is a slide boat, 4 is a substrate, 5 is a melt, and 6 is Hg
Te, 7 indicates a reservoir. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
エピタキシヤル成長させる液相成長装置において
、前記液相成長装置を使用に供する前に、予め前
記易蒸発性成分元素又はその化合物を前記液相成
長装置の反応管内に備えたことを特徴とする半導
体液相成長装置。 In a liquid phase growth apparatus for epitaxially growing a thin film of a compound semiconductor containing an easily vaporizable component element, before the liquid phase growth apparatus is put into use, the easily vaporizable component element or its compound is added to the liquid phase growth apparatus in advance. A semiconductor liquid phase growth apparatus characterized in that it is provided in a reaction tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990048498U JPH048430U (en) | 1990-05-08 | 1990-05-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990048498U JPH048430U (en) | 1990-05-08 | 1990-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH048430U true JPH048430U (en) | 1992-01-27 |
Family
ID=31565358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990048498U Pending JPH048430U (en) | 1990-05-08 | 1990-05-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH048430U (en) |
-
1990
- 1990-05-08 JP JP1990048498U patent/JPH048430U/ja active Pending
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