JPH0476063U - - Google Patents
Info
- Publication number
- JPH0476063U JPH0476063U JP12018290U JP12018290U JPH0476063U JP H0476063 U JPH0476063 U JP H0476063U JP 12018290 U JP12018290 U JP 12018290U JP 12018290 U JP12018290 U JP 12018290U JP H0476063 U JPH0476063 U JP H0476063U
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- main surface
- lead frame
- optically coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
第１図ａは、本考案の一実施例の平面図、第１
図ｂは、その下面図、第１図ｃは、第１図ａのＸ
−Ｘ線断面図、第２図は、第１図の実施例の等価
回路図、第３図は、従来例の平面図である。
１１，３１……発光ダイオード、１２，３２…
…受光素子、１２ａ，３２ａ……アノード電極、
１２ｂ，３２ｂ……カソード電極、１３……ＭＯ
ＳＦＥＴ装置、３３……ＭＯＳＦＥＴ、１３ａ，
３３ａ……ゲート電極、１３ｂ，３３ｂ……ソー
ス電極、１３ｃ……ドレイン電極、１４，３４…
…入力端子、１４ａ，３４ａ……アイランド、１
５，３５……出力端子、１５ａ，３５ａ……アイ
ランド、１６……中継端子、３６……端子、３６
ａ……アイランド、１７，３７……ボンデイング
ワイヤ、１８，３８……透明シリコン樹脂（光結
合路）、１９，３９……モールド樹脂。
Figure 1a is a plan view of one embodiment of the present invention;
Figure b is its bottom view, Figure 1 c is the X of Figure 1 a.
2 is an equivalent circuit diagram of the embodiment shown in FIG. 1, and FIG. 3 is a plan view of the conventional example. 11, 31... Light emitting diode, 12, 32...
... Light receiving element, 12a, 32a ... Anode electrode,
12b, 32b... cathode electrode, 13... MO
SFET device, 33...MOSFET, 13a,
33a...gate electrode, 13b, 33b...source electrode, 13c...drain electrode, 14,34...
...Input terminal, 14a, 34a...Island, 1
5, 35...Output terminal, 15a, 35a...Island, 16...Relay terminal, 36...Terminal, 36
a... Island, 17, 37... Bonding wire, 18, 38... Transparent silicon resin (optical coupling path), 19, 39... Molding resin.
Claims (1)
学的に結合された受光素子と、該受光素子の出力
信号により制御される半導体能動素子と、を含む
光結合半導体装置において、前記受光素子がリー
ドフレームの第１の主面にマウントされ前記半導
体能動素子が前記リードフレームの第２の主面に
マウントされていることを特徴とする光結合半導
体装置。 An optically coupled semiconductor device including a light-emitting element, a light-receiving element optically coupled to the light-emitting element via an optical coupling path, and a semiconductor active element controlled by an output signal of the light-receiving element, wherein the light-receiving element is mounted on a first main surface of a lead frame, and the semiconductor active element is mounted on a second main surface of the lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990120182U JP2549480Y2 (en) | 1990-11-16 | 1990-11-16 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990120182U JP2549480Y2 (en) | 1990-11-16 | 1990-11-16 | Optical coupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0476063U true JPH0476063U (en) | 1992-07-02 |
| JP2549480Y2 JP2549480Y2 (en) | 1997-09-30 |
Family
ID=31868102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990120182U Expired - Lifetime JP2549480Y2 (en) | 1990-11-16 | 1990-11-16 | Optical coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549480Y2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61128564A (en) * | 1984-11-28 | 1986-06-16 | Fujitsu Ltd | Semiconductor device |
| JPS6448057U (en) * | 1987-09-18 | 1989-03-24 | ||
| JPH02136343U (en) * | 1989-04-19 | 1990-11-14 | ||
| JPH0436260U (en) * | 1990-07-25 | 1992-03-26 |
-
1990
- 1990-11-16 JP JP1990120182U patent/JP2549480Y2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61128564A (en) * | 1984-11-28 | 1986-06-16 | Fujitsu Ltd | Semiconductor device |
| JPS6448057U (en) * | 1987-09-18 | 1989-03-24 | ||
| JPH02136343U (en) * | 1989-04-19 | 1990-11-14 | ||
| JPH0436260U (en) * | 1990-07-25 | 1992-03-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2549480Y2 (en) | 1997-09-30 |
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