JPH0478263U - - Google Patents
Info
- Publication number
- JPH0478263U JPH0478263U JP12057490U JP12057490U JPH0478263U JP H0478263 U JPH0478263 U JP H0478263U JP 12057490 U JP12057490 U JP 12057490U JP 12057490 U JP12057490 U JP 12057490U JP H0478263 U JPH0478263 U JP H0478263U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- vapor deposition
- vapor
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000009257 reactivity Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はこの考案の一実施例による薄膜形成装
置の概念を示す模式図、第２図は従来の薄膜形成
装置の概念を示す模式図である。
図において、１は真空槽、６は蒸着物質、１３
は基板、１４は薄膜、２１は坩堝、２２は胴体部
、２４はノズル、２５はコーテイング層である。
なお各図中、同一符号は同一または相当部分を示
す。
FIG. 1 is a schematic diagram showing the concept of a thin film forming apparatus according to an embodiment of this invention, and FIG. 2 is a schematic diagram showing the concept of a conventional thin film forming apparatus. In the figure, 1 is a vacuum chamber, 6 is a vapor deposition material, and 13
14 is a substrate, 21 is a crucible, 22 is a body, 24 is a nozzle, and 25 is a coating layer.
In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
の内部に蒸着物質を装填して上記坩堝の胴体部を
加熱し、上記蒸着物質の蒸気を上記坩堝から噴出
させて上記基板の表面に蒸着させ薄膜を形成する
薄膜形成装置において、上記坩堝を良熱伝導材料
で構成するとともに、上記坩堝の内面を、蒸着物
質との反応性の低い材料で被つたことを特徴とす
る薄膜形成装置。 A substrate and a crucible are placed inside a vacuum chamber, a vapor deposition material is loaded into the crucible, a body portion of the crucible is heated, and the vapor of the vapor deposition material is ejected from the crucible to be vapor deposited on the surface of the substrate. 1. A thin film forming apparatus for forming a thin film by evaporation, wherein the crucible is made of a material with good thermal conductivity, and the inner surface of the crucible is covered with a material having low reactivity with a vapor deposition substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12057490U JPH0478263U (en) | 1990-11-15 | 1990-11-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12057490U JPH0478263U (en) | 1990-11-15 | 1990-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0478263U true JPH0478263U (en) | 1992-07-08 |
Family
ID=31868473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12057490U Pending JPH0478263U (en) | 1990-11-15 | 1990-11-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0478263U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160481A (en) * | 2015-02-28 | 2016-09-05 | 国立大学法人 奈良先端科学技術大学院大学 | Deposition cell, thin film production apparatus, and thin film production method |
-
1990
- 1990-11-15 JP JP12057490U patent/JPH0478263U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160481A (en) * | 2015-02-28 | 2016-09-05 | 国立大学法人 奈良先端科学技術大学院大学 | Deposition cell, thin film production apparatus, and thin film production method |