JPH0479993B2 - - Google Patents

Info

Publication number
JPH0479993B2
JPH0479993B2 JP61118438A JP11843886A JPH0479993B2 JP H0479993 B2 JPH0479993 B2 JP H0479993B2 JP 61118438 A JP61118438 A JP 61118438A JP 11843886 A JP11843886 A JP 11843886A JP H0479993 B2 JPH0479993 B2 JP H0479993B2
Authority
JP
Japan
Prior art keywords
single crystal
semiconductor
layer
growing
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61118438A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62278187A (ja
Inventor
Tadashi Nishimura
Yasuaki Inoe
Kazuyuki Sugahara
Shigeru Kusunoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61118438A priority Critical patent/JPS62278187A/ja
Priority to DE8787103146T priority patent/DE3779672T2/de
Priority to EP87103146A priority patent/EP0235819B1/fr
Priority to US07/022,717 priority patent/US4822752A/en
Publication of JPS62278187A publication Critical patent/JPS62278187A/ja
Priority to US07/587,500 priority patent/US5371381A/en
Publication of JPH0479993B2 publication Critical patent/JPH0479993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP61118438A 1986-03-07 1986-05-24 半導体単結晶層の成長方法 Granted JPS62278187A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61118438A JPS62278187A (ja) 1986-05-24 1986-05-24 半導体単結晶層の成長方法
DE8787103146T DE3779672T2 (de) 1986-03-07 1987-03-05 Verfahren zum herstellen einer monokristallinen halbleiterschicht.
EP87103146A EP0235819B1 (fr) 1986-03-07 1987-03-05 Procédé pour fabriquer une couche semi-conductrice monocristalline
US07/022,717 US4822752A (en) 1986-03-07 1987-03-06 Process for producing single crystal semiconductor layer and semiconductor device produced by said process
US07/587,500 US5371381A (en) 1986-03-07 1990-09-24 Process for producing single crystal semiconductor layer and semiconductor device produced by said process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61118438A JPS62278187A (ja) 1986-05-24 1986-05-24 半導体単結晶層の成長方法

Publications (2)

Publication Number Publication Date
JPS62278187A JPS62278187A (ja) 1987-12-03
JPH0479993B2 true JPH0479993B2 (fr) 1992-12-17

Family

ID=14736638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61118438A Granted JPS62278187A (ja) 1986-03-07 1986-05-24 半導体単結晶層の成長方法

Country Status (1)

Country Link
JP (1) JPS62278187A (fr)

Also Published As

Publication number Publication date
JPS62278187A (ja) 1987-12-03

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term