JPH0480533B2 - - Google Patents

Info

Publication number: JPH0480533B2
Authority: JP; Japan
Prior art keywords: etching; anisotropic etching; cleaning; present; protrusions
Prior art date: 1986-06-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP14499586A

Other languages

English (en)

Japanese (ja)

Other versions

JPS632322A (ja

Inventor

Yoshitaka Ito

Shigehiko Koike

Kimiko Kuwabara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shindengen Electric Manufacturing Co Ltd

Original Assignee

Shindengen Electric Manufacturing Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-06-23

Filing date

1986-06-23

Publication date

1992-12-18

1986-06-23 Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd

1986-06-23 Priority to JP14499586A priority Critical patent/JPS632322A/ja

1988-01-07 Publication of JPS632322A publication Critical patent/JPS632322A/ja

1992-12-18 Publication of JPH0480533B2 publication Critical patent/JPH0480533B2/ja

Status Granted legal-status Critical Current

Links

238000005530 etching Methods 0.000 claims description 26
238000000034 method Methods 0.000 claims description 16
238000004140 cleaning Methods 0.000 claims description 11
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
229910052710 silicon Inorganic materials 0.000 claims description 9
239000010703 silicon Substances 0.000 claims description 9
239000004065 semiconductor Substances 0.000 claims description 5
239000000243 solution Substances 0.000 description 6
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
235000012431 wafers Nutrition 0.000 description 5
238000010586 diagram Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
229910004298 SiO 2 Inorganic materials 0.000 description 3
239000007864 aqueous solution Substances 0.000 description 3
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
239000002253 acid Substances 0.000 description 2
239000012670 alkaline solution Substances 0.000 description 2
YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000008034 disappearance Effects 0.000 description 2
238000007654 immersion Methods 0.000 description 2
238000002955 isolation Methods 0.000 description 2
238000002203 pretreatment Methods 0.000 description 2
238000012545 processing Methods 0.000 description 2
229910001111 Fine metal Inorganic materials 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
239000002923 metal particle Substances 0.000 description 1
239000005416 organic matter Substances 0.000 description 1
239000003960 organic solvent Substances 0.000 description 1
238000010992 reflux Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
238000011282 treatment Methods 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Landscapes

Drying Of Semiconductors (AREA)
Weting (AREA)

JP14499586A 1986-06-23 1986-06-23 シリコン半導体における異方性エツチング面の突起物除去方法 Granted JPS632322A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14499586A JPS632322A (ja)	1986-06-23	1986-06-23	シリコン半導体における異方性エツチング面の突起物除去方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14499586A JPS632322A (ja)	1986-06-23	1986-06-23	シリコン半導体における異方性エツチング面の突起物除去方法

Publications (2)

Publication Number	Publication Date
JPS632322A JPS632322A (ja)	1988-01-07
JPH0480533B2 true JPH0480533B2 (fr)	1992-12-18

Family

ID=15375021

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14499586A Granted JPS632322A (ja)	1986-06-23	1986-06-23	シリコン半導体における異方性エツチング面の突起物除去方法

Country Status (1)

Country	Link
JP (1)	JPS632322A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3054123B2 (ja) *	1998-06-08	2000-06-19	アプライドマテリアルズインコーポレイテッド	イオン注入方法
US6426254B2 (en) *	1999-06-09	2002-07-30	Infineon Technologies Ag	Method for expanding trenches by an anisotropic wet etch

1986
- 1986-06-23 JP JP14499586A patent/JPS632322A/ja active Granted

Also Published As

Publication number	Publication date
JPS632322A (ja)	1988-01-07

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Legal Events

Date	Code	Title	Description
2003-12-18	LAPS	Cancellation because of no payment of annual fees