JPH0516175B2 - - Google Patents
Info
- Publication number
- JPH0516175B2 JPH0516175B2 JP58030319A JP3031983A JPH0516175B2 JP H0516175 B2 JPH0516175 B2 JP H0516175B2 JP 58030319 A JP58030319 A JP 58030319A JP 3031983 A JP3031983 A JP 3031983A JP H0516175 B2 JPH0516175 B2 JP H0516175B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- region
- silicon layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 239000013078 crystal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030319A JPS58155765A (ja) | 1983-02-25 | 1983-02-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58030319A JPS58155765A (ja) | 1983-02-25 | 1983-02-25 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192542A Division JPS5893373A (ja) | 1981-11-30 | 1981-11-30 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58155765A JPS58155765A (ja) | 1983-09-16 |
| JPH0516175B2 true JPH0516175B2 (it) | 1993-03-03 |
Family
ID=12300473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58030319A Granted JPS58155765A (ja) | 1983-02-25 | 1983-02-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58155765A (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10703033B2 (en) * | 2015-06-11 | 2020-07-07 | Fanuc Corporation | Injection molding system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189154A (ja) * | 1988-01-25 | 1989-07-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
-
1983
- 1983-02-25 JP JP58030319A patent/JPS58155765A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10703033B2 (en) * | 2015-06-11 | 2020-07-07 | Fanuc Corporation | Injection molding system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58155765A (ja) | 1983-09-16 |
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