JPH05218328A - Nand型マスクrom - Google Patents

Nand型マスクrom

Info

Publication number
JPH05218328A
JPH05218328A JP29136092A JP29136092A JPH05218328A JP H05218328 A JPH05218328 A JP H05218328A JP 29136092 A JP29136092 A JP 29136092A JP 29136092 A JP29136092 A JP 29136092A JP H05218328 A JPH05218328 A JP H05218328A
Authority
JP
Japan
Prior art keywords
string selection
type
selection transistor
transistor
string
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29136092A
Other languages
English (en)
Japanese (ja)
Inventor
Jung-Dal Choi
正達 崔
Hyong-Gon Lee
炯坤 李
Ichikan Ri
一寛 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH05218328A publication Critical patent/JPH05218328A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP29136092A 1991-10-29 1992-10-29 Nand型マスクrom Pending JPH05218328A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1991P19085 1991-10-29
KR910019085 1991-10-29

Publications (1)

Publication Number Publication Date
JPH05218328A true JPH05218328A (ja) 1993-08-27

Family

ID=19321940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29136092A Pending JPH05218328A (ja) 1991-10-29 1992-10-29 Nand型マスクrom

Country Status (7)

Country Link
JP (1) JPH05218328A (it)
KR (1) KR960005564B1 (it)
CN (1) CN1072040A (it)
DE (1) DE4229129A1 (it)
FR (1) FR2683078A1 (it)
GB (1) GB2261090A (it)
IT (1) IT1255920B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027726A (ja) * 2005-07-12 2007-02-01 Samsung Electronics Co Ltd Nand型フラッシュメモリ装置及びその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358148B1 (ko) * 1995-05-15 2003-01-08 주식회사 하이닉스반도체 마스크롬
KR100358139B1 (ko) * 1995-07-11 2003-01-15 주식회사 하이닉스반도체 마스크롬
KR980005033A (ko) * 1996-06-27 1998-03-30 김주용 마스크 롬 디바이스
KR100408575B1 (ko) * 1996-12-17 2003-12-06 지멘스 악티엔게젤샤프트 메모리 셀 장치의 병렬 라인을 제어하기 위한 장치
JP2005243127A (ja) * 2004-02-25 2005-09-08 Sanyo Electric Co Ltd 紫外線消去型半導体メモリ装置
CN102214485B (zh) * 2010-04-02 2016-03-30 台湾积体电路制造股份有限公司 只读存储器与只读存储器操作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276757A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 半導体記憶装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305139A (en) * 1979-12-26 1981-12-08 International Business Machines Corporation State detection for storage cells
US4980861A (en) * 1987-01-16 1990-12-25 Microchip Technology Incorporated NAND stack ROM
KR910004166B1 (ko) * 1988-12-27 1991-06-22 삼성전자주식회사 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치
JP2509707B2 (ja) * 1989-09-04 1996-06-26 株式会社東芝 半導体装置の製造方法
KR940004609B1 (ko) * 1991-09-04 1994-05-25 삼성전자 주식회사 마스크 리드 온리 메모리

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276757A (ja) * 1988-04-28 1989-11-07 Fujitsu Ltd 半導体記憶装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027726A (ja) * 2005-07-12 2007-02-01 Samsung Electronics Co Ltd Nand型フラッシュメモリ装置及びその製造方法

Also Published As

Publication number Publication date
CN1072040A (zh) 1993-05-12
GB9222728D0 (en) 1992-12-09
ITMI922458A0 (it) 1992-10-27
GB2261090A (en) 1993-05-05
KR930009080A (ko) 1993-05-22
FR2683078A1 (fr) 1993-04-30
IT1255920B (it) 1995-11-17
KR960005564B1 (ko) 1996-04-26
ITMI922458A1 (it) 1994-04-27
DE4229129A1 (de) 1993-05-06

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