JPH0547808A - 集積回路の電源雑音抑制構造 - Google Patents

集積回路の電源雑音抑制構造

Info

Publication number
JPH0547808A
JPH0547808A JP4042677A JP4267792A JPH0547808A JP H0547808 A JPH0547808 A JP H0547808A JP 4042677 A JP4042677 A JP 4042677A JP 4267792 A JP4267792 A JP 4267792A JP H0547808 A JPH0547808 A JP H0547808A
Authority
JP
Japan
Prior art keywords
power supply
integrated circuit
substrate
lead frame
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4042677A
Other languages
English (en)
Japanese (ja)
Inventor
Byoung Yun Kim
キム ビヨン−ユン
Yong-Bo Park
パク ヨン−ボ
Deok-Min Lee
リー ドク−ミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0547808A publication Critical patent/JPH0547808A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/475—Capacitors in combination with leadframes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B15/00—Suppression or limitation of noise or interference
    • H04B15/005—Reducing noise, e.g. humm, from the supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H10D84/992—Noise prevention, e.g. preventing crosstalk
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
  • Filters And Equalizers (AREA)
JP4042677A 1991-08-19 1992-02-28 集積回路の電源雑音抑制構造 Pending JPH0547808A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR14266/1991 1991-08-19
KR1019910014266A KR930005334A (ko) 1991-08-19 1991-08-19 전원 잡음 억제를 위한 집적회로

Publications (1)

Publication Number Publication Date
JPH0547808A true JPH0547808A (ja) 1993-02-26

Family

ID=19318748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4042677A Pending JPH0547808A (ja) 1991-08-19 1992-02-28 集積回路の電源雑音抑制構造

Country Status (7)

Country Link
JP (1) JPH0547808A (it)
KR (1) KR930005334A (it)
DE (1) DE4206278A1 (it)
FR (1) FR2680602A1 (it)
GB (1) GB2258943A (it)
IT (1) IT1254810B (it)
TW (1) TW200631B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7570103B2 (en) 2005-12-20 2009-08-04 Nec Electronics Corporation Semiconductor device including capacitive circuit and short-circuit preventing circuit connected in series

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6900096A (en) * 1995-09-29 1997-04-17 Analog Devices, Inc. Integrated circuit and supply decoupling capacitor therefor
CN114864557A (zh) * 2022-04-21 2022-08-05 海南摩尔兄弟科技有限公司 一种芯片封装结构、雾化器、电子雾化装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167231A (ja) * 1984-09-10 1986-04-07 Matsushita Electric Ind Co Ltd 半導体装置
JPH01305543A (ja) * 1988-06-03 1989-12-08 New Japan Radio Co Ltd 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1816023A1 (de) * 1968-12-20 1970-06-25 Philips Patentverwaltung Baustein mit elektronischer Schaltung
JPS58164246A (ja) * 1982-03-24 1983-09-29 Nec Corp 半導体装置
US4516123A (en) * 1982-12-27 1985-05-07 At&T Bell Laboratories Integrated circuit including logic array with distributed ground connections
JPS61108160A (ja) * 1984-11-01 1986-05-26 Nec Corp コンデンサ内蔵型半導体装置及びその製造方法
US4737830A (en) * 1986-01-08 1988-04-12 Advanced Micro Devices, Inc. Integrated circuit structure having compensating means for self-inductance effects
JP2674073B2 (ja) * 1988-03-17 1997-11-05 松下電器産業株式会社 集積回路装置
JPH02224367A (ja) * 1989-02-27 1990-09-06 Ricoh Co Ltd コンデンサをもつ半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167231A (ja) * 1984-09-10 1986-04-07 Matsushita Electric Ind Co Ltd 半導体装置
JPH01305543A (ja) * 1988-06-03 1989-12-08 New Japan Radio Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7570103B2 (en) 2005-12-20 2009-08-04 Nec Electronics Corporation Semiconductor device including capacitive circuit and short-circuit preventing circuit connected in series

Also Published As

Publication number Publication date
FR2680602A1 (fr) 1993-02-26
GB2258943A (en) 1993-02-24
TW200631B (it) 1993-02-21
ITMI920375A1 (it) 1993-08-20
IT1254810B (it) 1995-10-11
KR930005334A (ko) 1993-03-23
DE4206278A1 (de) 1993-02-25
ITMI920375A0 (it) 1992-02-20
GB9204460D0 (en) 1992-04-15

Similar Documents

Publication Publication Date Title
US8310024B2 (en) Assembly, chip and method of operating
US5563762A (en) Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
US6222246B1 (en) Flip-chip having an on-chip decoupling capacitor
JP4222929B2 (ja) チップ・キャリア
US5930098A (en) Multichip semiconductor structures with interchip electrostatic discharge protection, and fabrication methods therefore
US4739389A (en) High-frequency circuit arrangement and semiconductor device for use in such an arrangement
KR101024241B1 (ko) 반도체 장치 및 그를 포함하는 반도체 패키지
US7355836B2 (en) Array capacitor for decoupling multiple voltage rails
US20070235790A1 (en) Capacitor structure of semiconductor device and method of fabricating the same
JP2002009166A (ja) 集積された誘導性回路
EP0772246B1 (en) Manufacturing process for high capacity capacitor
US6384468B1 (en) Capacitor and method for forming same
USRE39124E1 (en) Integrated circuit having capacitive elements
US5841182A (en) Capacitor structure in a bonded wafer and method of fabrication
US20070252187A1 (en) Top electrode barrier for on-chip die de-coupling capacitor and method of making same
US7030460B2 (en) Selectable capacitance apparatus and methods
US10872812B2 (en) High-density metal-insulator-metal (MiM) capacitors
JPH0547808A (ja) 集積回路の電源雑音抑制構造
US6362523B1 (en) Semiconductor device
US10714419B2 (en) Non-planar metal-insulator-metal capacitor formation
JPH05218302A (ja) オンチップ反結合キャパシタの構成方法
US6285070B1 (en) Method of forming semiconductor die with integral decoupling capacitor
US6225676B1 (en) Semiconductor device with improved inter-element isolation
US20210391245A1 (en) Semiconductor package device
JPH10284691A (ja) 半導体装置、及びノイズフィルター