JPH0570310B2 - - Google Patents

Info

Publication number: JPH0570310B2
Authority: JP; Japan
Prior art keywords: semiconductor layer; semiconductor; electron affinity; layer; layers
Prior art date: 1987-05-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP11690187A

Other languages

English (en)

Japanese (ja)

Other versions

JPS63283074A (ja

Inventor

Hideo Toyoshima

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-05-15

Filing date

1987-05-15

Publication date

1993-10-04

1987-05-15 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1987-05-15 Priority to JP11690187A priority Critical patent/JPS63283074A/ja

1988-11-18 Publication of JPS63283074A publication Critical patent/JPS63283074A/ja

1993-10-04 Publication of JPH0570310B2 publication Critical patent/JPH0570310B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 83
230000005641 tunneling Effects 0.000 claims description 9
230000000694 effects Effects 0.000 claims description 8
229910001218 Gallium arsenide Inorganic materials 0.000 description 21
239000000758 substrate Substances 0.000 description 7
230000004888 barrier function Effects 0.000 description 5
238000010586 diagram Methods 0.000 description 4
239000012535 impurity Substances 0.000 description 3
238000007796 conventional method Methods 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000001451 molecular beam epitaxy Methods 0.000 description 2
230000007423 decrease Effects 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000000034 method Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1

Landscapes

Bipolar Transistors (AREA)

JP11690187A 1987-05-15 1987-05-15 半導体装置 Granted JPS63283074A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP11690187A JPS63283074A (ja)	1987-05-15	1987-05-15	半導体装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11690187A JPS63283074A (ja)	1987-05-15	1987-05-15	半導体装置

Publications (2)

Publication Number	Publication Date
JPS63283074A JPS63283074A (ja)	1988-11-18
JPH0570310B2 true JPH0570310B2 (fr)	1993-10-04

Family

ID=14698445

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11690187A Granted JPS63283074A (ja)	1987-05-15	1987-05-15	半導体装置

Country Status (1)

Country	Link
JP (1)	JPS63283074A (fr)

1987
- 1987-05-15 JP JP11690187A patent/JPS63283074A/ja active Granted

Also Published As

Publication number	Publication date
JPS63283074A (ja)	1988-11-18

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