JPH0581180B2 - - Google Patents

Info

Publication number
JPH0581180B2
JPH0581180B2 JP63295875A JP29587588A JPH0581180B2 JP H0581180 B2 JPH0581180 B2 JP H0581180B2 JP 63295875 A JP63295875 A JP 63295875A JP 29587588 A JP29587588 A JP 29587588A JP H0581180 B2 JPH0581180 B2 JP H0581180B2
Authority
JP
Japan
Prior art keywords
trench
trenches
intersection
wafer
isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63295875A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01187944A (ja
Inventor
Efu Pangu Harii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH01187944A publication Critical patent/JPH01187944A/ja
Publication of JPH0581180B2 publication Critical patent/JPH0581180B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials

Landscapes

  • Element Separation (AREA)
  • Drying Of Semiconductors (AREA)
JP63295875A 1987-11-23 1988-11-22 半導体材料に隔離構造を形成する方法 Granted JPH01187944A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12375787A 1987-11-23 1987-11-23
US123757 1987-11-23

Publications (2)

Publication Number Publication Date
JPH01187944A JPH01187944A (ja) 1989-07-27
JPH0581180B2 true JPH0581180B2 (2) 1993-11-11

Family

ID=22410701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63295875A Granted JPH01187944A (ja) 1987-11-23 1988-11-22 半導体材料に隔離構造を形成する方法

Country Status (3)

Country Link
EP (1) EP0317786A3 (2)
JP (1) JPH01187944A (2)
KR (1) KR970003889B1 (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2681420B2 (ja) * 1991-05-02 1997-11-26 株式会社日立製作所 誘電体基板の製造方法
DE69511810T2 (de) 1994-09-28 2000-05-18 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Optische Halbleitervorrichtung und Herstellungsverfahren
JP5431638B2 (ja) * 2006-10-27 2014-03-05 ローム株式会社 半導体集積回路
DE102008029235B3 (de) 2008-06-19 2009-10-08 X-Fab Semiconductor Foundries Ag Kreuzungen von Isolationsgräben der SOI-Technologie

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098642A (ja) * 1983-11-02 1985-06-01 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JPS60136328A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
EP0317786A2 (en) 1989-05-31
KR900008640A (ko) 1990-06-03
JPH01187944A (ja) 1989-07-27
KR970003889B1 (ko) 1997-03-22
EP0317786A3 (en) 1991-01-16

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