JPH06122980A - 五酸化ニオブの異方性エッチング方法 - Google Patents

五酸化ニオブの異方性エッチング方法

Info

Publication number
JPH06122980A
JPH06122980A JP5091375A JP9137593A JPH06122980A JP H06122980 A JPH06122980 A JP H06122980A JP 5091375 A JP5091375 A JP 5091375A JP 9137593 A JP9137593 A JP 9137593A JP H06122980 A JPH06122980 A JP H06122980A
Authority
JP
Japan
Prior art keywords
substrate
electromagnetic radiation
etching
liquid atmosphere
niobium pentoxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5091375A
Other languages
English (en)
Japanese (ja)
Inventor
Monte A Douglas
エイ．ダグラス モンテ
Howard R Beratan
アール．ベラタン ハワード
Scott R Summerfelt
アール．サマーフェルト スコット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH06122980A publication Critical patent/JPH06122980A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5353—Wet etching, e.g. with etchants dissolved in organic solvents
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00387—Anisotropic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP5091375A 1992-04-20 1993-04-19 五酸化ニオブの異方性エッチング方法 Pending JPH06122980A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US872701 1992-04-20
US07/872,701 US5201989A (en) 1992-04-20 1992-04-20 Anisotropic niobium pentoxide etch

Publications (1)

Publication Number Publication Date
JPH06122980A true JPH06122980A (ja) 1994-05-06

Family

ID=25360136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5091375A Pending JPH06122980A (ja) 1992-04-20 1993-04-19 五酸化ニオブの異方性エッチング方法

Country Status (4)

Country Link
US (1) US5201989A (2)
JP (1) JPH06122980A (2)
KR (1) KR100296714B1 (2)
TW (1) TW232750B (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020084330A (ja) * 2018-11-30 2020-06-04 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 紫外線反応性金属酸化物含有膜を形成する方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279702A (en) * 1992-09-30 1994-01-18 Texas Instruments Incorporated Anisotropic liquid phase photochemical copper etch
MX9305898A (es) * 1992-10-30 1995-01-31 Texas Instruments Inc Metodo de grabado fotoquimico anisotropico para la fabricacion decircuitos integrados.
US5653851A (en) * 1994-07-05 1997-08-05 Texas Instruments Incorporated Method and apparatus for etching titanate with organic acid reagents
US5626773A (en) * 1995-01-03 1997-05-06 Texas Instruments Incorporated Structure and method including dry etching techniques for forming an array of thermal sensitive elements
US5746930A (en) * 1995-01-03 1998-05-05 Texas Instruments Incorporated Method and structure for forming an array of thermal sensors
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5705443A (en) * 1995-05-30 1998-01-06 Advanced Technology Materials, Inc. Etching method for refractory materials
US5919607A (en) * 1995-10-26 1999-07-06 Brown University Research Foundation Photo-encoded selective etching for glass based microtechnology applications
US6358430B1 (en) * 1999-07-28 2002-03-19 Motorola, Inc. Technique for etching oxides and/or insulators
US6550795B1 (en) 2001-03-20 2003-04-22 Dana Corporation Suspension alignment device
CN104759753B (zh) * 2015-03-30 2016-08-31 江苏大学 多系统自动化协调工作提高激光诱导空化强化的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
US4661201A (en) * 1985-09-09 1987-04-28 Cts Corporation Preferential etching of a piezoelectric material
US4838989A (en) * 1987-08-25 1989-06-13 The United States Of America As Represented By The United States Department Of Energy Laser-driven fusion etching process
US4861421A (en) * 1988-06-01 1989-08-29 Texas Instruments Incorporated Photochemical semiconductor etching
US5057184A (en) * 1990-04-06 1991-10-15 International Business Machines Corporation Laser etching of materials in liquids

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020084330A (ja) * 2018-11-30 2020-06-04 アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ 紫外線反応性金属酸化物含有膜を形成する方法

Also Published As

Publication number Publication date
KR930021819A (ko) 1993-11-23
TW232750B (2) 1994-10-21
KR100296714B1 (ko) 2001-10-24
US5201989A (en) 1993-04-13

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