JPH11177105A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH11177105A
JPH11177105A JP36344497A JP36344497A JPH11177105A JP H11177105 A JPH11177105 A JP H11177105A JP 36344497 A JP36344497 A JP 36344497A JP 36344497 A JP36344497 A JP 36344497A JP H11177105 A JPH11177105 A JP H11177105A
Authority
JP
Japan
Prior art keywords
layer
aluminum
tantalum
semiconductor device
main component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP36344497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11177105A5 (2
Inventor
Shunpei Yamazaki
舜平 山崎
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP36344497A priority Critical patent/JPH11177105A/ja
Priority to US09/210,781 priority patent/US6369410B1/en
Publication of JPH11177105A publication Critical patent/JPH11177105A/ja
Priority to US10/101,830 priority patent/US6613614B2/en
Publication of JPH11177105A5 publication Critical patent/JPH11177105A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP36344497A 1997-12-15 1997-12-15 半導体装置およびその作製方法 Withdrawn JPH11177105A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP36344497A JPH11177105A (ja) 1997-12-15 1997-12-15 半導体装置およびその作製方法
US09/210,781 US6369410B1 (en) 1997-12-15 1998-12-15 Semiconductor device and method of manufacturing the semiconductor device
US10/101,830 US6613614B2 (en) 1997-12-15 2002-03-21 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36344497A JPH11177105A (ja) 1997-12-15 1997-12-15 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007069775A Division JP4153015B2 (ja) 2007-03-19 2007-03-19 半導体装置

Publications (2)

Publication Number Publication Date
JPH11177105A true JPH11177105A (ja) 1999-07-02
JPH11177105A5 JPH11177105A5 (2) 2005-07-21

Family

ID=18479327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36344497A Withdrawn JPH11177105A (ja) 1997-12-15 1997-12-15 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH11177105A (2)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345453A (ja) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法
JP2005141213A (ja) * 2000-01-25 2005-06-02 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2012198558A (ja) * 1999-10-29 2012-10-18 Semiconductor Energy Lab Co Ltd 電子装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012198558A (ja) * 1999-10-29 2012-10-18 Semiconductor Energy Lab Co Ltd 電子装置
JP2005141213A (ja) * 2000-01-25 2005-06-02 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2001345453A (ja) * 2000-03-27 2001-12-14 Semiconductor Energy Lab Co Ltd 液晶表示装置及びその作製方法

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