JPH1145988A5 - - Google Patents

Info

Publication number
JPH1145988A5
JPH1145988A5 JP1998019311A JP1931198A JPH1145988A5 JP H1145988 A5 JPH1145988 A5 JP H1145988A5 JP 1998019311 A JP1998019311 A JP 1998019311A JP 1931198 A JP1931198 A JP 1931198A JP H1145988 A5 JPH1145988 A5 JP H1145988A5
Authority
JP
Japan
Prior art keywords
ion implantation
pmos
nmos
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998019311A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1145988A (ja
JP4077063B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP01931198A priority Critical patent/JP4077063B2/ja
Priority claimed from JP01931198A external-priority patent/JP4077063B2/ja
Priority to PCT/JP1999/000397 priority patent/WO1999039391A1/fr
Priority to AU21854/99A priority patent/AU2185499A/en
Publication of JPH1145988A publication Critical patent/JPH1145988A/ja
Priority to US09/628,446 priority patent/US6392282B1/en
Publication of JPH1145988A5 publication Critical patent/JPH1145988A5/ja
Application granted granted Critical
Publication of JP4077063B2 publication Critical patent/JP4077063B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP01931198A 1997-05-27 1998-01-30 ＢｉＣＭＯＳ内蔵受光半導体装置 Expired - Fee Related JP4077063B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP01931198A JP4077063B2 (ja) 1997-05-27 1998-01-30 ＢｉＣＭＯＳ内蔵受光半導体装置
PCT/JP1999/000397 WO1999039391A1 (fr) 1998-01-30 1999-01-29 DISPOSITIF A SEMI-CONDUCTEUR RECEPTEUR DE LUMIERE COMPORTANT UN BiCMOS INTEGRE ET UNE PHOTODIODE A AVALANCHE
AU21854/99A AU2185499A (en) 1998-01-30 1999-01-29 Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode
US09/628,446 US6392282B1 (en) 1998-01-30 2000-07-28 BiCMOS-integrated photodetecting semiconductor device having an avalanche photodiode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-137023 1997-05-27
JP13702397 1997-05-27
JP01931198A JP4077063B2 (ja) 1997-05-27 1998-01-30 ＢｉＣＭＯＳ内蔵受光半導体装置

Publications (3)

Publication Number Publication Date
JPH1145988A JPH1145988A (ja) 1999-02-16
JPH1145988A5 true JPH1145988A5 (fr) 2005-03-17
JP4077063B2 JP4077063B2 (ja) 2008-04-16

Family

ID=26356146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01931198A Expired - Fee Related JP4077063B2 (ja) 1997-05-27 1998-01-30 ＢｉＣＭＯＳ内蔵受光半導体装置

Country Status (1)

Country Link
JP (1) JP4077063B2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4641104B2 (ja) * 2001-02-05 2011-03-02 浜松ホトニクス株式会社 半導体光検出装置
JP2003017577A (ja) * 2001-07-04 2003-01-17 Denso Corp 半導体装置
IL156497A (en) * 2002-06-20 2007-08-19 Samsung Electronics Co Ltd Image sensor and method of fabricating the same
JP4709012B2 (ja) * 2006-01-05 2011-06-22 ルネサスエレクトロニクス株式会社 光半導体装置およびその製造方法
JP4671981B2 (ja) 2007-03-20 2011-04-20 パナソニック株式会社 光半導体装置
JP2009064800A (ja) * 2007-09-04 2009-03-26 Nec Electronics Corp 分割フォトダイオード
JP2010103221A (ja) * 2008-10-22 2010-05-06 Panasonic Corp 光半導体装置
KR102358584B1 (ko) * 2013-05-22 2022-02-04 시-위안 왕 마이크로구조-증강 흡수 감광성 디바이스
EP3221895A4 (fr) * 2014-11-18 2018-08-15 Shih-Yuan Wang Dispositifs photosensibles à absorption améliorée par des microstructures
JP6701135B2 (ja) * 2016-10-13 2020-05-27 キヤノン株式会社 光検出装置および光検出システム
JP2019165181A (ja) 2018-03-20 2019-09-26 株式会社東芝 光検出装置
JP7327949B2 (ja) * 2019-02-27 2023-08-16 キヤノン株式会社 光電変換装置、光電変換システム、及び移動体

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